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PUCC23513QDWYRQ1

Texas Instruments

PUCC23513QDWYRQ1 by Texas Instruments

PUCC23513QDWYRQ1 by Texas Instruments is a MOSFET gate driver with AEC-Q100 screening for automotive applications. It features a max supply voltage of 33V, output current of 4.5A, and turn-on/off time of 0.105us. This small outline package has dual terminals and push-pull output characteristics, making it ideal for high-side driver applications in automotive systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,871 parts In-Stock

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Digiode

USA . 1,417 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Corohmni

South Africa . 2 parts In-Stock

1+ parts

$3.999

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2

$3.999

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Parana Technologies

USA . 14 parts In-Stock

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$5.941

100+ parts

$551.689

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$5.347

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14

$5.941

$551.689

$5.347

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DigiPath Technology Company

USA . 944 parts In-Stock

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$6.542

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944

$6.542

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ChromeModa Solutions

Germany . 5,687 parts In-Stock

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$6.675

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$5.474

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$6.675

$5.474

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IDEA Electronic Components Group

UK . 1,831 parts In-Stock

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$6.675

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$6.008

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1,831

$6.675

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$6.008

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Advanced Electronics

New Zealand . 60 parts In-Stock

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$10.497

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$9.972

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$9.972

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60

$10.497

$9.972

$9.972

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Ampacity Inc.

Singapore . 1,473 parts In-Stock

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$11.500

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$11.500

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AZTECH Wire

Italy . 856 parts In-Stock

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$12.951

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$12.951

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One Stop Electronics

USA . 1,381 parts In-Stock

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$24.500

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$24.500

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Semicontronic

India . 1,464 parts In-Stock

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$42.500

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$41.438

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$41.225

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1,464

$42.500

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Argo Parts USA

USA . 3,711 parts In-Stock

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Continental Prestige Electronics

USA . 3,625 parts In-Stock

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Corphita

USA . 2,340 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Experience superior performance and reliability with the PUCC23513QDWYRQ1 by Texas Instruments, a leading manufacturer known for its high-quality MOSFET Gate Drivers. Designed for automotive applications, this product offers a wide range of benefits including a maximum output current of 4.5A, small outline package style, and push-pull output characteristics. With a nominal supply voltage of 15V and AEC-Q100 screening level, this gate driver provides the value and advantages you need for your projects. Trust Texas Instruments to deliver the best in semiconductor solutions for your automotive needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the gate driver, making it suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easier and more efficient installation on PCBs.

Screening Level: AEC-Q100

AEC-Q100 compliance ensures high reliability and quality standards, making it ideal for automotive applications.

Maximum Supply Voltage: 33 V

The high maximum supply voltage allows for flexibility in the power supply design.

No. of Terminals: 6

Having 6 terminals provides sufficient connectivity options for interfacing with other components.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature makes it suitable for challenging environments.

Output Characteristics: PUSH-PULL

The push-pull output configuration allows for efficient driving of MOSFETs with fast switching speeds.

High Side Driver: YES

Having a high side driver capability allows for driving both high-side and low-side MOSFETs in a full bridge configuration.

Maximum Output Current: 4.5 A

The high output current capability enables driving of high power MOSFETs.

Technical Specifications

MOSFET Gate Drivers PUCC23513QDWYRQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

JESD-30 Code:

R-PDSO-G6

Length:

7.5 mm

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Maximum Output Current:

4.5 A

Nominal Output Peak Current Limit:

5.3 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP6,.45

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Screening Level:

AEC-Q100

Maximum Seated Height:

3.55 mm

Maximum Supply Voltage-1:

33 V

Minimum Supply Voltage-1:

14 V

Nominal Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Turn-off Time:

.105 us

Turn-on Time:

.105 us

Width:

4.68 mm

Trade Compliance

PUCC23513QDWYRQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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