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UCC21220DR

Texas Instruments

UCC21220DR by Texas Instruments

UCC21220DR by Texas Instruments is a MOSFET gate driver with 2 channels, capable of handling up to 6A output current. It operates in automotive-grade temperatures (-40 to 125°C) and supports a wide supply voltage range (3-18V). Ideal for applications requiring high side drivers and built-in transient protections.

Median Price

$3.070

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 15,852 parts In-Stock

1+ parts

$1.616

100+ parts

$1.416

1k+ parts

$0.800

10k+ parts

-

15,852

$1.616

$1.416

$0.800

-

DigiKey

USA . 3,168 parts In-Stock

1+ parts

$3.070

100+ parts

$1.892

1k+ parts

$1.760

10k+ parts

-

3,168

$3.070

$1.892

$1.760

-

Mouser Electronics

USA . 2,229 parts In-Stock

1+ parts

$3.070

100+ parts

$1.900

1k+ parts

$1.680

10k+ parts

$1.590

2,229

$3.070

$1.900

$1.680

$1.590

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,319 parts In-Stock

1+ parts

$1.535

100+ parts

-

1k+ parts

-

10k+ parts

-

4,319

$1.535

-

-

-

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$1.975

100+ parts

-

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-

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300

$1.975

-

-

-

Sensible Micro Corp

USA . 8,394 parts In-Stock

1+ parts

-

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-

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8,394

-

-

-

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Vyrian

USA . 7,218 parts In-Stock

1+ parts

-

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7,218

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-

-

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Cyclops Electronics Ltd

UK . 500 parts In-Stock

1+ parts

-

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-

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500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 7,482 parts In-Stock

1+ parts

$1.370

100+ parts

-

1k+ parts

-

10k+ parts

-

7,482

$1.370

-

-

-

Semicontronic

India . 7,224 parts In-Stock

1+ parts

$1.370

100+ parts

$1.336

1k+ parts

$1.329

10k+ parts

-

7,224

$1.370

$1.336

$1.329

-

Corphita

USA . 428 parts In-Stock

1+ parts

$1.454

100+ parts

-

1k+ parts

-

10k+ parts

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428

$1.454

-

-

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

$1.936

100+ parts

-

1k+ parts

$1.859

10k+ parts

-

50

$1.936

-

$1.859

-

Continental Prestige Electronics

USA . 5,141 parts In-Stock

1+ parts

$1.975

100+ parts

-

1k+ parts

-

10k+ parts

$1.936

5,141

$1.975

-

-

$1.936

Argo Parts USA

USA . 2,416 parts In-Stock

1+ parts

$1.975

100+ parts

-

1k+ parts

-

10k+ parts

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2,416

$1.975

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$2.015

100+ parts

$2.015

1k+ parts

$2.015

10k+ parts

-

1,000

$2.015

$2.015

$2.015

-

Parana Technologies

USA . 1,512 parts In-Stock

1+ parts

$6.458

100+ parts

$599.708

1k+ parts

$5.812

10k+ parts

-

1,512

$6.458

$599.708

$5.812

-

DigiPath Technology Company

USA . 899 parts In-Stock

1+ parts

$7.111

100+ parts

$6.542

1k+ parts

-

10k+ parts

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899

$7.111

$6.542

-

-

ChromeModa Solutions

Germany . 5,388 parts In-Stock

1+ parts

$7.256

100+ parts

$5.950

1k+ parts

-

10k+ parts

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5,388

$7.256

$5.950

-

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IDEA Electronic Components Group

UK . 2,224 parts In-Stock

1+ parts

$7.256

100+ parts

-

1k+ parts

$6.530

10k+ parts

-

2,224

$7.256

-

$6.530

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Corohmni

South Africa . 44 parts In-Stock

1+ parts

$9.457

100+ parts

-

1k+ parts

-

10k+ parts

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44

$9.457

-

-

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A-Z Elektronik GmbH

Germany . 6,276 parts In-Stock

1+ parts

-

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6,276

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Lixinc

USA . 2,751 parts In-Stock

1+ parts

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2,751

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Futuretech Components

Singapore . 552 parts In-Stock

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552

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Perfect Parts

USA . 101 parts In-Stock

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101

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Overview

Experience the next level of performance with the UCC21220DR MOSFET Gate Driver by Texas Instruments. Crafted with precision and quality, this driver offers optimal protection with built-in transient and under voltage safeguards. Ideal for automotive applications, this small outline driver provides a seamless interface for IGBT/MOSFET drivers, ensuring reliable operation in any condition. Elevate your projects with the UCC21220DR and unleash its unmatched value and benefits, making it the ultimate choice for your next design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the internal components of the gate driver, ensuring a longer lifespan.

Surface Mount: YES

Surface mount capability makes it easy to integrate the gate driver onto circuit boards, saving space and simplifying assembly.

Maximum Supply Voltage: 5.5 V

With a maximum supply voltage of 5.5V, this gate driver can efficiently power and control MOSFETs within the specified voltage range.

Built-in Protections: TRANSIENT; UNDER VOLTAGE

The built-in transient and under voltage protections help safeguard the gate driver and connected components from potential damage or malfunctions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact integration in various electronic applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C enables the gate driver to function reliably in demanding environments without overheating.

Nominal Supply Voltage: 3.3 V

The 3.3V nominal supply voltage ensures efficient and stable operation of the gate driver with compatible MOSFETs.

Maximum Output Current: 6 A

The high maximum output current capability of 6A allows the gate driver to drive multiple MOSFETs or handle higher power applications effectively.

No. of Channels: 2

Having 2 output channels enables the gate driver to control multiple MOSFETs independently, making it versatile for various circuit configurations.

Technical Specifications

MOSFET Gate Drivers UCC21220DR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Built-in Protections:

TRANSIENT; UNDER VOLTAGE

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

9.9 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE AND SINK

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage-1:

18 V

Minimum Supply Voltage-1:

9.2 V

Nominal Supply Voltage-1:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.04 us

Turn-on Time:

.04 us

Width:

3.9 mm

Trade Compliance

UCC21220DR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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