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UCC21222D

Texas Instruments

UCC21222D by Texas Instruments

UCC21222D by Texas Instruments is a MOSFET gate driver with 2 channels, capable of handling a max output current of 6A. It operates in automotive-grade temperatures (-40 to 125°C) and has built-in protections for transient and under voltage events. With a small outline package style, it is suitable for high side driver applications in automotive electronics.

Median Price

$4.390

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 52,561 parts In-Stock

1+ parts

$3.577

100+ parts

$3.135

1k+ parts

$1.771

10k+ parts

-

52,561

$3.577

$3.135

$1.771

-

Mouser Electronics

USA . 6,934 parts In-Stock

1+ parts

$4.390

100+ parts

-

1k+ parts

$2.290

10k+ parts

$2.220

6,934

$4.390

-

$2.290

$2.220

DigiKey

USA . 1,818 parts In-Stock

1+ parts

$4.930

100+ parts

$3.331

1k+ parts

$2.807

10k+ parts

-

1,818

$4.930

$3.331

$2.807

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 26 parts In-Stock

1+ parts

$2.579

100+ parts

-

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-

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26

$2.579

-

-

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Digiode

USA . 325 parts In-Stock

1+ parts

$3.398

100+ parts

-

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-

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325

$3.398

-

-

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Maritex

Poland . 1,302 parts In-Stock

1+ parts

$4.440

100+ parts

$2.770

1k+ parts

$2.250

10k+ parts

-

1,302

$4.440

$2.770

$2.250

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Vyrian

USA . 20,000 parts In-Stock

1+ parts

-

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20,000

-

-

-

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Chip Stock

USA . 6,500 parts In-Stock

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6,500

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 6,504 parts In-Stock

1+ parts

$2.494

100+ parts

-

1k+ parts

-

10k+ parts

$2.445

6,504

$2.494

-

-

$2.445

Argo Parts USA

USA . 3,813 parts In-Stock

1+ parts

$2.494

100+ parts

-

1k+ parts

-

10k+ parts

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3,813

$2.494

-

-

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Netroflash

USA . 50 parts In-Stock

1+ parts

$2.579

100+ parts

-

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50

$2.579

-

-

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Semicontronic

India . 20,220 parts In-Stock

1+ parts

$3.040

100+ parts

$2.964

1k+ parts

$2.949

10k+ parts

-

20,220

$3.040

$2.964

$2.949

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Ampacity Inc.

Singapore . 20,006 parts In-Stock

1+ parts

$3.040

100+ parts

-

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20,006

$3.040

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Corphita

USA . 900 parts In-Stock

1+ parts

$3.219

100+ parts

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900

$3.219

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-

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Corohmni

South Africa . 2 parts In-Stock

1+ parts

$9.184

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-

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2

$9.184

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Parana Technologies

USA . 1,250 parts In-Stock

1+ parts

$12.060

100+ parts

-

1k+ parts

$12.468

10k+ parts

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1,250

$12.060

-

$12.468

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$13.227

100+ parts

$12.566

1k+ parts

$12.566

10k+ parts

-

50

$13.227

$12.566

$12.566

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DigiPath Technology Company

USA . 1,052 parts In-Stock

1+ parts

$13.280

100+ parts

$12.218

1k+ parts

-

10k+ parts

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1,052

$13.280

$12.218

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IDEA Electronic Components Group

UK . 721 parts In-Stock

1+ parts

$13.551

100+ parts

$12.873

1k+ parts

$12.196

10k+ parts

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721

$13.551

$12.873

$12.196

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ChromeModa Solutions

Germany . 305 parts In-Stock

1+ parts

$13.551

100+ parts

$11.112

1k+ parts

-

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305

$13.551

$11.112

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Lixinc

USA . 18,652 parts In-Stock

1+ parts

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18,652

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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5,000

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-

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A-Z Elektronik GmbH

Germany . 1,040 parts In-Stock

1+ parts

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1,040

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Robosynatics

Brazil . 150 parts In-Stock

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150

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Lucentia Tech

USA . 150 parts In-Stock

1+ parts

-

100+ parts

$42.397

1k+ parts

$42.397

10k+ parts

$42.397

150

-

$42.397

$42.397

$42.397

Overview

Maximize the performance of your MOSFET applications with the UCC21222D by Texas Instruments. Designed with built-in protections for transient and under voltage scenarios, this high-quality MOSFET gate driver offers reliability and efficiency. With a compact design and dual channel capability, this automotive-grade driver provides seamless operation in a variety of industrial settings. Trust in Texas Instruments' reputation for innovation and quality, and experience the value and benefits that the UCC21222D brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the gate driver, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and convenient installation onto circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 5.5 V

Suitable for low power applications, making it energy efficient and cost-effective.

Built-in Protections: TRANSIENT; UNDER VOLTAGE

Enhances the reliability and safety of the gate driver by safeguarding against potential damage from transient events and voltage dips.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for industrial and automotive applications where heat may be a concern.

Output Current Flow Direction: SOURCE AND SINK

Allows for bidirectional current flow, enabling flexibility in controlling the connected MOSFETs.

Technical Specifications

MOSFET Gate Drivers UCC21222D attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Built-in Protections:

TRANSIENT; UNDER VOLTAGE

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

9.9 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE AND SINK

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage-1:

18 V

Minimum Supply Voltage-1:

9.2 V

Nominal Supply Voltage-1:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.04 us

Turn-on Time:

.04 us

Width:

3.9 mm

Trade Compliance

UCC21222D Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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