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ISO5452QDWRQ1

Texas Instruments

ISO5452QDWRQ1 by Texas Instruments

ISO5452QDWRQ1 by Texas Instruments is a MOSFET Gate Driver with 16 terminals. It operates b/w -40 to 125 °C and has a supply voltage range of 2.25-30 V. Suitable for automotive applications, it offers a max output current of 5 A and turn-on/off time of 0.11 us.

Median Price

$5.860

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 6,889 parts In-Stock

1+ parts

$3.949

100+ parts

$3.460

1k+ parts

$1.955

10k+ parts

-

6,889

$3.949

$3.460

$1.955

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Mouser Electronics

USA . 16,513 parts In-Stock

1+ parts

$5.860

100+ parts

$3.780

1k+ parts

$3.400

10k+ parts

$3.220

16,513

$5.860

$3.780

$3.400

$3.220

DigiKey

USA . 3,822 parts In-Stock

1+ parts

$5.860

100+ parts

$3.773

1k+ parts

$3.396

10k+ parts

$3.323

3,822

$5.860

$3.773

$3.396

$3.323

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 27 parts In-Stock

1+ parts

$3.611

100+ parts

-

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27

$3.611

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Digiode

USA . 4,438 parts In-Stock

1+ parts

$3.752

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4,438

$3.752

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Sensible Micro Corp

USA . 104,000 parts In-Stock

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104,000

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Chip Stock

USA . 19,500 parts In-Stock

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19,500

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Vyrian

USA . 9,372 parts In-Stock

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9,372

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Cyclops Electronics Ltd

UK . 2,500 parts In-Stock

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2,500

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Distributors (Availability)

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Semicontronic

India . 9,330 parts In-Stock

1+ parts

$3.360

100+ parts

$3.276

1k+ parts

$3.259

10k+ parts

-

9,330

$3.360

$3.276

$3.259

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Ampacity Inc.

Singapore . 9,105 parts In-Stock

1+ parts

$3.360

100+ parts

-

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9,105

$3.360

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$3.538

100+ parts

-

1k+ parts

$3.397

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1,000

$3.538

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$3.397

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Corphita

USA . 1,447 parts In-Stock

1+ parts

$3.554

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1,447

$3.554

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Continental Prestige Electronics

USA . 5,048 parts In-Stock

1+ parts

$3.611

100+ parts

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10k+ parts

$3.538

5,048

$3.611

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-

$3.538

Argo Parts USA

USA . 4,236 parts In-Stock

1+ parts

$3.611

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4,236

$3.611

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Parana Technologies

USA . 476 parts In-Stock

1+ parts

$7.352

100+ parts

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$7.845

10k+ parts

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476

$7.352

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$7.845

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DigiPath Technology Company

USA . 1,760 parts In-Stock

1+ parts

$8.096

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1,760

$8.096

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IDEA Electronic Components Group

UK . 2,362 parts In-Stock

1+ parts

$8.261

100+ parts

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$7.435

10k+ parts

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2,362

$8.261

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$7.435

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ChromeModa Solutions

Germany . 833 parts In-Stock

1+ parts

$8.261

100+ parts

$6.774

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833

$8.261

$6.774

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Corohmni

South Africa . 41 parts In-Stock

1+ parts

$14.369

100+ parts

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41

$14.369

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$15.072

100+ parts

$14.318

1k+ parts

$14.318

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2,000

$15.072

$14.318

$14.318

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Lixinc

USA . 8,291 parts In-Stock

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Computer Components Inc. - USA

USA . 7,999 parts In-Stock

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Kepictronics

USA . 6,000 parts In-Stock

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Perfect Parts

USA . 4,480 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,150 parts In-Stock

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Futuretech Components

Singapore . 1,200 parts In-Stock

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1,200

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Overview

Enhance your automotive applications with the ISO5452QDWRQ1 by Texas Instruments, a premium MOSFET Gate Driver that guarantees quality and reliability. With its AEC-Q100 screening level and high operating temperature range, this driver offers top-notch performance in challenging environments. Texas Instruments, a trusted manufacturer, ensures that this product delivers exceptional value and benefits to customers seeking efficient power management solutions. Upgrade your systems with the ISO5452QDWRQ1 and experience enhanced functionality and durability like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable housing for the MOSFET gate driver, ensuring long-term reliability and ease of handling during installation.

Surface Mount: YES

Allows for easy and convenient placement on circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 5.5 V

Suitable for applications where a lower supply voltage is required, providing compatibility with a wide range of automotive and industrial systems.

Screening Level: AEC-Q100

Meets automotive industry standards for reliability and performance, making it a dependable choice for automotive applications.

Maximum Output Current: 5 A

Capable of driving high-current loads, making it suitable for power electronics applications that require efficient switching and control.

Maximum Operating Temperature: 125 °C

Can withstand high temperature environments, ensuring reliable operation in automotive and industrial applications where heat generation is a concern.

Technical Specifications

MOSFET Gate Drivers ISO5452QDWRQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

10.3 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

30 V

Minimum Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.11 us

Turn-on Time:

.11 us

Width:

7.5 mm

Trade Compliance

ISO5452QDWRQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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