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ISO5851QDWRQ1

Texas Instruments

ISO5851QDWRQ1 by Texas Instruments

ISO5851QDWRQ1 by Texas Instruments is a MOSFET Gate Driver with 16 terminals, suitable for automotive applications. It operates b/w -40 to 125 °C and has a max output current of 5 A. With a turn-on/off time of 0.11 us, it supports IGBT/MOSFET drivers in compact form factor.

Median Price

$7.820

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 11,927 parts In-Stock

1+ parts

$4.815

100+ parts

$3.926

1k+ parts

$2.617

10k+ parts

-

11,927

$4.815

$3.926

$2.617

-

Farnell

UK . 1,586 parts In-Stock

1+ parts

$7.610

100+ parts

$4.600

1k+ parts

-

10k+ parts

-

1,586

$7.610

$4.600

-

-

Mouser Electronics

USA . 5,943 parts In-Stock

1+ parts

$8.030

100+ parts

$5.220

1k+ parts

$4.690

10k+ parts

$4.550

5,943

$8.030

$5.220

$4.690

$4.550

Element14

Singapore . 1,586 parts In-Stock

1+ parts

$9.280

100+ parts

-

1k+ parts

-

10k+ parts

-

1,586

$9.280

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$3.323

100+ parts

-

1k+ parts

-

10k+ parts

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10

$3.323

-

-

-

Digiode

USA . 4,611 parts In-Stock

1+ parts

$4.574

100+ parts

-

1k+ parts

-

10k+ parts

-

4,611

$4.574

-

-

-

Vyrian

USA . 5,243 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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5,243

-

-

-

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Cyclops Electronics Ltd

UK . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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50

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 3,569 parts In-Stock

1+ parts

$3.323

100+ parts

-

1k+ parts

-

10k+ parts

-

3,569

$3.323

-

-

-

Netroflash

USA . 500 parts In-Stock

1+ parts

$3.323

100+ parts

$3.257

1k+ parts

-

10k+ parts

-

500

$3.323

$3.257

-

-

Ampacity Inc.

Singapore . 5,034 parts In-Stock

1+ parts

$4.090

100+ parts

-

1k+ parts

-

10k+ parts

-

5,034

$4.090

-

-

-

Semicontronic

India . 4,876 parts In-Stock

1+ parts

$4.090

100+ parts

$3.988

1k+ parts

$3.967

10k+ parts

-

4,876

$4.090

$3.988

$3.967

-

Corphita

USA . 2,182 parts In-Stock

1+ parts

$4.334

100+ parts

-

1k+ parts

-

10k+ parts

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2,182

$4.334

-

-

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Continental Prestige Electronics

USA . 1,586 parts In-Stock

1+ parts

$7.610

100+ parts

$4.600

1k+ parts

-

10k+ parts

-

1,586

$7.610

$4.600

-

-

Parana Technologies

USA . 2,095 parts In-Stock

1+ parts

$7.826

100+ parts

-

1k+ parts

$8.379

10k+ parts

-

2,095

$7.826

-

$8.379

-

DigiPath Technology Company

USA . 692 parts In-Stock

1+ parts

$8.617

100+ parts

$7.928

1k+ parts

-

10k+ parts

-

692

$8.617

$7.928

-

-

ChromeModa Solutions

Germany . 958 parts In-Stock

1+ parts

$8.793

100+ parts

$7.210

1k+ parts

-

10k+ parts

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958

$8.793

$7.210

-

-

IDEA Electronic Components Group

UK . 654 parts In-Stock

1+ parts

$8.793

100+ parts

$8.353

1k+ parts

$7.914

10k+ parts

-

654

$8.793

$8.353

$7.914

-

Corohmni

South Africa . 56 parts In-Stock

1+ parts

$12.637

100+ parts

-

1k+ parts

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10k+ parts

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56

$12.637

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Perfect Parts

USA . 8,960 parts In-Stock

1+ parts

-

100+ parts

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8,960

-

-

-

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Kepictronics

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

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6,000

-

-

-

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A-Z Elektronik GmbH

Germany . 3,575 parts In-Stock

1+ parts

-

100+ parts

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3,575

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-

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Infinite Electronics LLP (Excess)

. 2,009 parts In-Stock

1+ parts

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2,009

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-

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Futuretech Components

Singapore . 2,000 parts In-Stock

1+ parts

-

100+ parts

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2,000

-

-

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,000

-

-

-

-

Overview

Experience unparalleled reliability and performance with the ISO5851QDWRQ1 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch quality MOSFET Gate Drivers designed for a wide range of automotive applications. This compact and efficient driver ensures seamless operation and precise control, making it the perfect choice for your projects. Trust in Texas Instruments to provide you with unmatched value, benefits, and advantages, setting your designs apart from the rest. Elevate your work with the ISO5851QDWRQ1 and experience excellence like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, suitable for various applications.

Surface Mount: YES

Being surface mountable makes installation easier and more convenient, saving space on the PCB.

Maximum Supply Voltage: 5.5 V

Can handle high supply voltages, providing robust performance in demanding conditions.

Screening Level: AEC-Q100

Compliance with AEC-Q100 automotive standards ensures reliability and quality for automotive applications.

Maximum Output Current: 5 A

Capable of driving high current loads, suitable for driving power MOSFETs in various applications.

Maximum Operating Temperature: 125 °C

Withstands high temperatures, making it suitable for use in harsh environments.

Minimum Operating Temperature: -40 °C

Operates efficiently even in extreme cold temperatures, ensuring reliable performance in all conditions.

Technical Specifications

MOSFET Gate Drivers ISO5851QDWRQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

10.3 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

30 V

Minimum Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.11 us

Turn-on Time:

.11 us

Width:

7.5 mm

Trade Compliance

ISO5851QDWRQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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