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ISO5451QDWRQ1

Texas Instruments

ISO5451QDWRQ1 by Texas Instruments

ISO5451QDWRQ1 by Texas Instruments is a MOSFET gate driver with 16 terminals. It operates b/w -40 to 125 °C and has a max supply voltage of 30 V. Suitable for automotive applications, it features a turn-on time of 0.11 us and can handle a max output current of 5 A.

Median Price

$5.470

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 34,733 parts In-Stock

1+ parts

$3.252

100+ parts

$2.850

1k+ parts

$1.610

10k+ parts

-

34,733

$3.252

$2.850

$1.610

-

Mouser Electronics

USA . 1,650 parts In-Stock

1+ parts

$5.470

100+ parts

$3.490

1k+ parts

$3.230

10k+ parts

$3.100

1,650

$5.470

$3.490

$3.230

$3.100

DigiKey

USA . 3,461 parts In-Stock

1+ parts

$5.530

100+ parts

$3.535

1k+ parts

$3.387

10k+ parts

-

3,461

$5.530

$3.535

$3.387

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 99 parts In-Stock

1+ parts

$2.415

100+ parts

-

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-

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99

$2.415

-

-

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Digiode

USA . 2,303 parts In-Stock

1+ parts

$3.089

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-

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2,303

$3.089

-

-

-

Component Sense

UK . 49,325 parts In-Stock

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-

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49,325

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Vyrian

USA . 12,600 parts In-Stock

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12,600

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Chip Stock

USA . 4,549 parts In-Stock

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4,549

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Cyclops Electronics Ltd

UK . 668 parts In-Stock

1+ parts

-

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668

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-

-

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Bristol Electronics

USA . 250 parts In-Stock

1+ parts

-

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250

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 12,681 parts In-Stock

1+ parts

$1.710

100+ parts

-

1k+ parts

-

10k+ parts

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12,681

$1.710

-

-

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Continental Prestige Electronics

USA . 1,623 parts In-Stock

1+ parts

$2.415

100+ parts

-

1k+ parts

-

10k+ parts

$2.367

1,623

$2.415

-

-

$2.367

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$2.415

100+ parts

-

1k+ parts

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10k+ parts

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1,000

$2.415

-

-

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Argo Parts USA

USA . 629 parts In-Stock

1+ parts

$2.415

100+ parts

-

1k+ parts

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629

$2.415

-

-

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Corphita

USA . 4,462 parts In-Stock

1+ parts

$2.927

100+ parts

-

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4,462

$2.927

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-

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Advanced Electronics

New Zealand . 1,595 parts In-Stock

1+ parts

$3.805

100+ parts

$3.501

1k+ parts

$3.280

10k+ parts

-

1,595

$3.805

$3.501

$3.280

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Parana Technologies

USA . 2,343 parts In-Stock

1+ parts

$7.718

100+ parts

-

1k+ parts

$8.251

10k+ parts

-

2,343

$7.718

-

$8.251

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DigiPath Technology Company

USA . 486 parts In-Stock

1+ parts

$8.499

100+ parts

$7.819

1k+ parts

-

10k+ parts

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486

$8.499

$7.819

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-

ChromeModa Solutions

Germany . 1,667 parts In-Stock

1+ parts

$8.672

100+ parts

$7.111

1k+ parts

-

10k+ parts

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1,667

$8.672

$7.111

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IDEA Electronic Components Group

UK . 805 parts In-Stock

1+ parts

$8.672

100+ parts

$8.238

1k+ parts

$7.805

10k+ parts

-

805

$8.672

$8.238

$7.805

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Corohmni

South Africa . 487 parts In-Stock

1+ parts

$14.397

100+ parts

-

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487

$14.397

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Lixinc

USA . 17,138 parts In-Stock

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17,138

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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Kepictronics

USA . 6,000 parts In-Stock

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6,000

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A-Z Elektronik GmbH

Germany . 4,000 parts In-Stock

1+ parts

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4,000

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-

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Futuretech Components

Singapore . 2,000 parts In-Stock

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2,000

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-

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Component Connect

USA . 454 parts In-Stock

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454

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Overview

Elevate your automotive electronics with the Texas Instruments ISO5451QDWRQ1 MOSFET gate driver. Designed with top-notch quality and reliability, this product is a game-changer in the industry. Its AEC-Q100 screening level ensures peak performance even in the toughest conditions. Whether you're working on power steering systems, lighting controls, or motor drives, this driver guarantees seamless operation and exceptional efficiency. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable, and cost-effective, making the product easy to handle and suitable for a wide range of applications.

Surface Mount: YES

The ability to be mounted directly onto the surface of a circuit board saves space and simplifies the assembly process.

Maximum Supply Voltage: 5.5 V

The high maximum supply voltage allows for compatibility with a variety of systems and ensures reliable operation.

Screening Level: AEC-Q100

This automotive qualification standard ensures that the product meets the necessary requirements for use in automotive applications, providing high reliability and performance.

Maximum Output Current: 5 A

The high maximum output current capability allows for driving power MOSFETs with larger gate capacitances, enabling efficient and fast switching operation.

Technical Specifications

MOSFET Gate Drivers ISO5451QDWRQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

10.3 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

5 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

2.65 mm

Maximum Supply Current:

4.5 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

30 V

Minimum Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.11 us

Turn-on Time:

.11 us

Width:

7.5 mm

Trade Compliance

ISO5451QDWRQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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