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IR2110S

Infineon Technologies

IR2110S by Infineon Technologies

IR2110S by Infineon Technologies is a MOSFET Gate Driver with a max supply voltage of 20V and high side driver feature. It has a turn-on time of 0.15us and turn-off time of 0.125us, making it ideal for automotive applications requiring fast switching speeds. With a small outline package style and dual terminal position, this CMOS technology driver is suitable for various surface mount designs in the automotive industry.

Median Price

$7.000

Lifecycle Status

Suppliers In-Stock

46

In-Stock Inventory

1k+

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Voyager Components

USA . 30 parts In-Stock

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DF Sales Co.

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Forefront Electronics and Design

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Benley Electronics

USA . 15 parts In-Stock

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AZTECH Wire

Italy . 566 parts In-Stock

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Modulus Dynamics

Lithuania . 1,707 parts In-Stock

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$8.430

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Aztec Data Supply Inc.

USA . 152 parts In-Stock

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$12.473

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Corohmni

South Africa . 350 parts In-Stock

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Semicontronic

India . 1,129 parts In-Stock

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$48.262

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Perfect Parts

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Microchip USA

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Argo Parts USA

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Germany . 1,679 parts In-Stock

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Kepictronics

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Alle Elektronik GmbH

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Bastille Electronics

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Corphita

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Glotronic Ltd.

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Overview

Enhance the performance and reliability of your MOSFET applications with the IR2110S by Infineon Technologies. Designed with precision and expertise, this high-quality MOSFET Gate Driver offers unparalleled value and benefits to customers. Whether you're in the automotive industry or working on cutting-edge technology projects, the IR2110S provides a seamless experience with its advanced features and robust construction. Trust in Infineon Technologies to deliver excellence in every product, and elevate your projects to new heights with the IR2110S.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for various applications without adding unnecessary weight.

Surface Mount: YES

Facilitates easy and efficient installation on PCBs, saving time and effort during assembly.

Maximum Supply Voltage: 20 V

Allows for compatibility with a wide range of power sources, increasing flexibility in usage.

Package Shape: RECTANGULAR

Provides a compact design that can fit into tight spaces on a circuit board.

No. of Terminals: 16

Offers a sufficient number of connections for proper functionality and integration with external components.

Maximum Operating Temperature: 125 °C

Ensures reliable performance even in high-temperature environments, making it suitable for a wide range of applications.

Nominal Output Peak Current Limit: 2.5 A

Capable of driving high currents, making it suitable for power electronics applications.

Technology: CMOS

Utilizes CMOS technology for efficient power management and low power consumption, enhancing overall energy efficiency.

Technical Specifications

MOSFET Gate Drivers IR2110S attributes and parameters. Explore more MOSFET Gate Drivers devices from Infineon Technologies

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e0

Length:

10.3 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

2.5 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage:

20 V

Minimum Supply Voltage:

3.3 V

Nominal Supply Voltage:

15 V

Maximum Supply Voltage-1:

520 V

Minimum Supply Voltage-1:

6 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.125 us

Turn-on Time:

.15 us

Width:

7.5 mm

Trade Compliance

IR2110S Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-607-5418, 5962016075418

NIIN

016075418

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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