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ISO5851QDWQ1

Texas Instruments

ISO5851QDWQ1 by Texas Instruments

ISO5851QDWQ1 by Texas Instruments is a MOSFET gate driver with 16 terminals, suitable for automotive applications. It operates b/w -40 to 125 °C and has a max output current of 5 A. With a turn-on/off time of 0.11 us, it supports IGBT/MOSFET drivers in compact form factor.

Median Price

$6.597

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 25,321 parts In-Stock

1+ parts

$5.654

100+ parts

$4.610

1k+ parts

$3.073

10k+ parts

-

25,321

$5.654

$4.610

$3.073

-

Mouser Electronics

USA . 120 parts In-Stock

1+ parts

$7.540

100+ parts

$6.500

1k+ parts

$4.190

10k+ parts

-

120

$7.540

$6.500

$4.190

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$5.337

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$5.337

-

-

-

Digiode

USA . 3,620 parts In-Stock

1+ parts

$5.371

100+ parts

-

1k+ parts

-

10k+ parts

-

3,620

$5.371

-

-

-

Vyrian

USA . 4,331 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,331

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 12,394 parts In-Stock

1+ parts

$4.810

100+ parts

-

1k+ parts

-

10k+ parts

-

12,394

$4.810

-

-

-

Corphita

USA . 1,920 parts In-Stock

1+ parts

$5.089

100+ parts

-

1k+ parts

-

10k+ parts

-

1,920

$5.089

-

-

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

$5.230

100+ parts

-

1k+ parts

$5.021

10k+ parts

-

50

$5.230

-

$5.021

-

Parana Technologies

USA . 2,154 parts In-Stock

1+ parts

$11.560

100+ parts

-

1k+ parts

$11.969

10k+ parts

-

2,154

$11.560

-

$11.969

-

DigiPath Technology Company

USA . 1,418 parts In-Stock

1+ parts

$12.729

100+ parts

$11.711

1k+ parts

-

10k+ parts

-

1,418

$12.729

$11.711

-

-

ChromeModa Solutions

Germany . 2,748 parts In-Stock

1+ parts

$12.989

100+ parts

$10.651

1k+ parts

-

10k+ parts

-

2,748

$12.989

$10.651

-

-

IDEA Electronic Components Group

UK . 2,144 parts In-Stock

1+ parts

$12.989

100+ parts

$12.340

1k+ parts

$11.690

10k+ parts

-

2,144

$12.989

$12.340

$11.690

-

QUARKTWIN TECHNOLOGY LTD

USA . 21,018 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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21,018

-

-

-

-

Overview

Elevate your automotive applications with the ISO5851QDWQ1 MOSFET Gate Driver by Texas Instruments. Designed to meet AEC-Q100 standards, this high-quality device offers reliable performance in harsh environments. With a wide supply voltage range and fast turn-on/off times, this compact driver maximizes efficiency while ensuring robust protection for your system. Trust in Texas Instruments' reputation for excellence and choose the ISO5851QDWQ1 for your automotive projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, suitable for automotive applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly onto circuit boards.

Maximum Supply Voltage: 5.5 V

The high maximum supply voltage ensures compatibility with a wide range of systems and power sources.

Screening Level: AEC-Q100

The AEC-Q100 screening level signifies automotive-grade reliability and quality standards.

Maximum Output Current: 5 A

The high maximum output current capability enables the driver to handle high power applications effectively.

Technical Specifications

MOSFET Gate Drivers ISO5851QDWQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

10.3 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

30 V

Minimum Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.11 us

Turn-on Time:

.11 us

Width:

7.5 mm

Trade Compliance

ISO5851QDWQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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