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ISO5451DW

Texas Instruments

ISO5451DW by Texas Instruments

ISO5451DW by Texas Instruments is a MOSFET Gate Driver with 16 terminals, operating at -40 to 125 °C. It has a supply voltage range of 3-30 V and can handle up to 5 A output current. Ideal for automotive applications due to its small outline package style and true output polarity.

Median Price

$5.430

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 37,591 parts In-Stock

1+ parts

$3.959

100+ parts

$3.469

1k+ parts

$1.960

10k+ parts

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37,591

$3.959

$3.469

$1.960

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Mouser Electronics

USA . 731 parts In-Stock

1+ parts

$4.810

100+ parts

-

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$2.630

10k+ parts

$2.620

731

$4.810

-

$2.630

$2.620

DigiKey

USA . 174 parts In-Stock

1+ parts

$5.430

100+ parts

$3.686

1k+ parts

$3.431

10k+ parts

-

174

$5.430

$3.686

$3.431

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Element14

Singapore . 1 parts In-Stock

1+ parts

$5.742

100+ parts

$5.367

1k+ parts

$5.176

10k+ parts

-

1

$5.742

$5.367

$5.176

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Farnell

UK . 1 parts In-Stock

1+ parts

$6.038

100+ parts

$5.532

1k+ parts

$5.402

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1

$6.038

$5.532

$5.402

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$3.423

100+ parts

-

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1,000

$3.423

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-

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Digiode

USA . 2,112 parts In-Stock

1+ parts

$3.761

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2,112

$3.761

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Chip Stock

USA . 33,500 parts In-Stock

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33,500

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Vyrian

USA . 2,454 parts In-Stock

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2,454

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Cyclops Electronics Ltd

UK . 52 parts In-Stock

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52

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LIBRA Elektronik GmbH

Germany . 24 parts In-Stock

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24

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Distributors (Availability)

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Ampacity Inc.

Singapore . 6,399 parts In-Stock

1+ parts

$3.370

100+ parts

-

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6,399

$3.370

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Semicontronic

India . 6,326 parts In-Stock

1+ parts

$3.370

100+ parts

$3.286

1k+ parts

$3.269

10k+ parts

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6,326

$3.370

$3.286

$3.269

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Argo Parts USA

USA . 4,698 parts In-Stock

1+ parts

$3.423

100+ parts

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4,698

$3.423

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Netroflash

USA . 50 parts In-Stock

1+ parts

$3.423

100+ parts

$3.355

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50

$3.423

$3.355

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Corphita

USA . 3,838 parts In-Stock

1+ parts

$3.563

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3,838

$3.563

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Corohmni

South Africa . 1,103 parts In-Stock

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$3.690

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1,103

$3.690

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Continental Prestige Electronics

USA . 27 parts In-Stock

1+ parts

$4.560

100+ parts

$3.480

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27

$4.560

$3.480

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Parana Technologies

USA . 105 parts In-Stock

1+ parts

$6.634

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$7.353

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105

$6.634

-

$7.353

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DigiPath Technology Company

USA . 1,149 parts In-Stock

1+ parts

$7.305

100+ parts

$6.721

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1,149

$7.305

$6.721

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ChromeModa Solutions

Germany . 1,844 parts In-Stock

1+ parts

$7.454

100+ parts

$6.112

1k+ parts

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1,844

$7.454

$6.112

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IDEA Electronic Components Group

UK . 205 parts In-Stock

1+ parts

$7.454

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$6.709

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205

$7.454

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$6.709

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Authorized Procurement Solutions

USA . 9,000 parts In-Stock

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9,000

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Futuretech Components

Singapore . 2,998 parts In-Stock

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A-Z Elektronik GmbH

Germany . 800 parts In-Stock

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800

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Perfect Parts

USA . 672 parts In-Stock

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672

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Kepictronics

USA . 100 parts In-Stock

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100

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Overview

Elevate your designs with the Texas Instruments ISO5451DW MOSFET Gate Driver. Known for their exceptional quality and reliability, Texas Instruments delivers cutting-edge solutions for a variety of applications. With a compact design and a wide range of operating temperatures, this driver offers high-performance results under any conditions. Trust in Texas Instruments to provide you with the value, benefits, and advantages you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components, making the product suitable for various environments.

Surface Mount: YES

Enables easy and efficient installation on circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 5.5 V

Allows for compatibility with a wide range of power supply systems, ensuring versatile usage.

Package Shape: RECTANGULAR

Facilitates space-saving design and efficient placement on the PCB for optimized layout.

Power Supplies (V): 3.3/5

Supports multiple power supply options, offering flexibility in powering the gate driver.

No. of Terminals: 16

Provides ample connectivity options for interfacing with other components in the circuit.

Minimum Operating Temperature: -40 °C

Ensures reliable performance even in harsh operating conditions with low temperatures.

Maximum Operating Temperature: 125 °C

Allows for consistent operation in high-temperature environments, increasing overall reliability.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Provides corrosion resistance and ensures long-term reliability for the terminal connections.

Maximum Output Current: 5 A

Delivers sufficient current capabilities for driving MOSFETs efficiently in various applications.

Technical Specifications

MOSFET Gate Drivers ISO5451DW attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Additional Features:

ALSO REQUIRED VEE2 SUPPLY -15V TO 0V

High Side Driver:

NO

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

10.3 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

5 A

Nominal Output Peak Current Limit:

5 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3/5

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Sub-Category:

Peripheral Drivers

Maximum Supply Current:

4.5 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

30 V

Minimum Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.11 us

Turn-on Time:

.11 us

Width:

7.5 mm

Trade Compliance

ISO5451DW Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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