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ISO5851DWR

Texas Instruments

ISO5851DWR by Texas Instruments

ISO5851DWR by Texas Instruments is a MOSFET Gate Driver with 16 terminals, operating voltage range of 3-30V, and output current up to 5A. It has a small outline package style suitable for automotive applications. With fast turn-on/off times of 0.11us, it's ideal for driving IGBT/MOSFET in automotive systems.

Median Price

$6.270

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 1,340 parts In-Stock

1+ parts

$4.188

100+ parts

$3.414

1k+ parts

$2.276

10k+ parts

-

1,340

$4.188

$3.414

$2.276

-

Mouser Electronics

USA . 2,800 parts In-Stock

1+ parts

$6.270

100+ parts

$4.040

1k+ parts

$3.690

10k+ parts

$3.630

2,800

$6.270

$4.040

$3.690

$3.630

DigiKey

USA . 10,948 parts In-Stock

1+ parts

$6.420

100+ parts

$4.149

1k+ parts

$4.004

10k+ parts

-

10,948

$6.420

$4.149

$4.004

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$3.414

100+ parts

-

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600

$3.414

-

-

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Digiode

USA . 3,083 parts In-Stock

1+ parts

$3.979

100+ parts

-

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3,083

$3.979

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Chip Stock

USA . 51,500 parts In-Stock

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51,500

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Vyrian

USA . 6,086 parts In-Stock

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6,086

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Cyclops Electronics Ltd

UK . 1,600 parts In-Stock

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1,600

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-

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ComSIT Distribution GmbH

Germany . 200 parts In-Stock

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200

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,390 parts In-Stock

1+ parts

$2.441

100+ parts

-

1k+ parts

$2.936

10k+ parts

-

1,390

$2.441

-

$2.936

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DigiPath Technology Company

USA . 1,972 parts In-Stock

1+ parts

$2.688

100+ parts

-

1k+ parts

-

10k+ parts

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1,972

$2.688

-

-

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ChromeModa Solutions

Germany . 3,088 parts In-Stock

1+ parts

$2.743

100+ parts

$2.249

1k+ parts

-

10k+ parts

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3,088

$2.743

$2.249

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IDEA Electronic Components Group

UK . 2,091 parts In-Stock

1+ parts

$2.743

100+ parts

-

1k+ parts

$2.469

10k+ parts

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2,091

$2.743

-

$2.469

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$3.346

100+ parts

-

1k+ parts

$3.212

10k+ parts

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1,000

$3.346

-

$3.212

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Argo Parts USA

USA . 3,845 parts In-Stock

1+ parts

$3.414

100+ parts

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3,845

$3.414

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Continental Prestige Electronics

USA . 819 parts In-Stock

1+ parts

$3.414

100+ parts

-

1k+ parts

-

10k+ parts

$3.346

819

$3.414

-

-

$3.346

Corohmni

South Africa . 949 parts In-Stock

1+ parts

$3.510

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949

$3.510

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Semicontronic

India . 6,494 parts In-Stock

1+ parts

$3.560

100+ parts

$3.471

1k+ parts

$3.453

10k+ parts

-

6,494

$3.560

$3.471

$3.453

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Ampacity Inc.

Singapore . 6,395 parts In-Stock

1+ parts

$3.560

100+ parts

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6,395

$3.560

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$3.615

100+ parts

$3.435

1k+ parts

$3.435

10k+ parts

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100

$3.615

$3.435

$3.435

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Corphita

USA . 1,648 parts In-Stock

1+ parts

$3.769

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1,648

$3.769

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Authorized Procurement Solutions

USA . 60,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,000 parts In-Stock

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Lixinc

USA . 5,103 parts In-Stock

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Futuretech Components

Singapore . 4,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,776 parts In-Stock

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3,776

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Infinite Electronics LLP (Excess)

. 2,001 parts In-Stock

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Robosynatics

Brazil . 100 parts In-Stock

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100

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Lucentia Tech

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$12.623

1k+ parts

$12.623

10k+ parts

$12.623

100

-

$12.623

$12.623

$12.623

Overview

Elevate your projects with the ISO5851DWR by Texas Instruments, a top-tier manufacturer known for exceptional quality and innovation. As a leading MOSFET gate driver in the industry, this product offers reliability and efficiency in various applications. Experience seamless integration and optimized performance with its superior design and advanced features. Trust in Texas Instruments to deliver cutting-edge solutions that enhance your work and elevate your results. Turn your ideas into reality with the ISO5851DWR and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Allows for easy and efficient installation on PCBs, saving time and effort in assembly.

Maximum Supply Voltage: 5.5 V

Supports a wide range of applications without risking damage to the components.

Package Shape: RECTANGULAR

Facilitates easy integration into existing circuit designs and saves space on the PCB.

Maximum Operating Temperature: 125 °C

Ensures reliable performance even in high-temperature environments, making it suitable for various industrial applications.

Technical Specifications

MOSFET Gate Drivers ISO5851DWR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Additional Features:

ALSO REQUIRED VEE2 SUPPLY -15V TO 0V

High Side Driver:

NO

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

10.3 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

5 A

Nominal Output Peak Current Limit:

5 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Sub-Category:

Peripheral Drivers

Maximum Supply Current:

4.5 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

30 V

Minimum Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.11 us

Turn-on Time:

.11 us

Width:

7.5 mm

Trade Compliance

ISO5851DWR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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