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ISO5452DWR

Texas Instruments

ISO5452DWR by Texas Instruments

The Texas Instruments ISO5452DWR is a MOSFET gate driver with 16 terminals, operating at -40 to 125°C. It has a max supply voltage of 30V and output current of 5A, suitable for automotive applications requiring fast turn-on/off times (0.11us) and true output polarity.

Median Price

$5.260

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 6,411 parts In-Stock

1+ parts

$3.434

100+ parts

$3.009

1k+ parts

$1.700

10k+ parts

-

6,411

$3.434

$3.009

$1.700

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Mouser Electronics

USA . 1,539 parts In-Stock

1+ parts

$5.260

100+ parts

$3.350

1k+ parts

$3.120

10k+ parts

$2.970

1,539

$5.260

$3.350

$3.120

$2.970

DigiKey

USA . 6,239 parts In-Stock

1+ parts

$5.330

100+ parts

$3.399

1k+ parts

$3.251

10k+ parts

-

6,239

$5.330

$3.399

$3.251

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Maritex

Poland . 130 parts In-Stock

1+ parts

$2.997

100+ parts

$1.872

1k+ parts

$1.519

10k+ parts

-

130

$2.997

$1.872

$1.519

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Nova Conductors

Japan . 86 parts In-Stock

1+ parts

$3.139

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-

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86

$3.139

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Digiode

USA . 4,207 parts In-Stock

1+ parts

$3.262

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4,207

$3.262

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Cyclops Electronics Ltd

UK . 19,597 parts In-Stock

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19,597

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Chip Stock

USA . 11,500 parts In-Stock

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11,500

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Vyrian

USA . 3,373 parts In-Stock

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3,373

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,380 parts In-Stock

1+ parts

$2.230

100+ parts

-

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3,380

$2.230

-

-

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Semicontronic

India . 3,376 parts In-Stock

1+ parts

$2.230

100+ parts

$2.174

1k+ parts

$2.163

10k+ parts

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3,376

$2.230

$2.174

$2.163

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$3.077

100+ parts

-

1k+ parts

$2.954

10k+ parts

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2,000

$3.077

-

$2.954

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Corphita

USA . 4,959 parts In-Stock

1+ parts

$3.091

100+ parts

-

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4,959

$3.091

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-

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Argo Parts USA

USA . 3,996 parts In-Stock

1+ parts

$3.139

100+ parts

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3,996

$3.139

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Continental Prestige Electronics

USA . 1,757 parts In-Stock

1+ parts

$3.139

100+ parts

-

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10k+ parts

$3.077

1,757

$3.139

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-

$3.077

Corohmni

South Africa . 789 parts In-Stock

1+ parts

$3.220

100+ parts

-

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789

$3.220

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Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$3.317

100+ parts

$3.151

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$3.151

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10

$3.317

$3.151

$3.151

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Parana Technologies

USA . 400 parts In-Stock

1+ parts

$10.845

100+ parts

-

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$11.323

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400

$10.845

-

$11.323

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DigiPath Technology Company

USA . 2,159 parts In-Stock

1+ parts

$11.941

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2,159

$11.941

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ChromeModa Solutions

Germany . 1,917 parts In-Stock

1+ parts

$12.185

100+ parts

$9.992

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1,917

$12.185

$9.992

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IDEA Electronic Components Group

UK . 1,639 parts In-Stock

1+ parts

$12.185

100+ parts

$11.576

1k+ parts

$10.966

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1,639

$12.185

$11.576

$10.966

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,956 parts In-Stock

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Kepictronics

USA . 9,000 parts In-Stock

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Lixinc

USA . 8,260 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,000 parts In-Stock

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GreenTree Electronics

Israel . 2,000 parts In-Stock

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2,000

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iodParts Technologies Inc.

India . 1,950 parts In-Stock

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Infinite Electronics LLP (Excess)

. 1,606 parts In-Stock

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1,606

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Metaverse IC Inc.

Canada . 1,579 parts In-Stock

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1,579

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Futuretech Components

Singapore . 785 parts In-Stock

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785

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Overview

Experience unparalleled quality and reliability with the ISO5452DWR by Texas Instruments, a leading manufacturer in semiconductor technology. This MOSFET gate driver offers robust performance and versatility for a wide range of applications. With a compact design and high efficiency, this product provides value and benefits that exceed expectations. Enhance your projects with the advantages of superior engineering and cutting-edge technology, making the ISO5452DWR the ideal choice for your needs.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and reliability.

Surface Mount:

YES - Allows for easy and efficient installation on PCBs.

Maximum Supply Voltage:

5.5 V - Ensures safe operation within specified voltage range.

Package Shape:

RECTANGULAR - Offers a compact design for space-saving installations.

No. of Terminals:

16 - Provides flexibility for connecting to various components.

Minimum Supply Voltage:

2.25 V - Allows for operation even in low voltage conditions.

Maximum Operating Temperature:

125 °C - Ensures stable performance in high-temperature environments.

Minimum Operating Temperature:

40 °C - Enables operation in cold conditions.

Terminal Finish:

NICKEL PALLADIUM GOLD - Enhances conductivity and corrosion resistance.

Width:

7.5 mm - Compact size for easy integration into various applications.

Technical Specifications

MOSFET Gate Drivers ISO5452DWR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Additional Features:

ALSO REQUIRED VEE2 SUPPLY -15V TO 0V

High Side Driver:

NO

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

10.3 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

5 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

2.65 mm

Maximum Supply Current:

4.5 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

30 V

Minimum Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.11 us

Turn-on Time:

.11 us

Width:

7.5 mm

Trade Compliance

ISO5452DWR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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