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LM5109BQNGTTQ1

Texas Instruments

LM5109BQNGTTQ1 by Texas Instruments

LM5109BQNGTTQ1 by Texas Instruments is a MOSFET gate driver with 2 channels, operating at automotive temperature grade. It features a max supply voltage of 14V and high side driver capability, suitable for automotive applications requiring true output polarity control. With a small outline package style and very thin profile, it offers fast turn-on/off times of 0.056 us.

Median Price

$1.545

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 6,399 parts In-Stock

1+ parts

$1.210

100+ parts

$0.999

1k+ parts

$0.540

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-

6,399

$1.210

$0.999

$0.540

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DigiKey

USA . 4,175 parts In-Stock

1+ parts

$1.880

100+ parts

$1.121

1k+ parts

$1.047

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-

4,175

$1.880

$1.121

$1.047

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Mouser Electronics

USA . 1,357 parts In-Stock

1+ parts

$1.880

100+ parts

$1.130

1k+ parts

$0.984

10k+ parts

$0.929

1,357

$1.880

$1.130

$0.984

$0.929

RS (Exports)

UK . 980 parts In-Stock

1+ parts

-

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$0.870

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980

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$0.870

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Distributors (In-Stock)

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Nova Conductors

Japan . 91 parts In-Stock

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$1.000

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91

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Digiode

USA . 1,559 parts In-Stock

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$1.150

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1,559

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Chip Stock

USA . 40,990 parts In-Stock

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40,990

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Vyrian

USA . 3,091 parts In-Stock

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Sunrise Surplus Inc.

USA . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 3,216 parts In-Stock

1+ parts

$0.740

100+ parts

$0.722

1k+ parts

$0.718

10k+ parts

-

3,216

$0.740

$0.722

$0.718

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Ampacity Inc.

Singapore . 2,971 parts In-Stock

1+ parts

$0.740

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2,971

$0.740

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Continental Prestige Electronics

USA . 4,082 parts In-Stock

1+ parts

$0.830

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-

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$0.813

4,082

$0.830

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-

$0.813

Argo Parts USA

USA . 1,936 parts In-Stock

1+ parts

$0.830

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1,936

$0.830

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Corphita

USA . 50 parts In-Stock

1+ parts

$1.089

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50

$1.089

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Advanced Electronics

New Zealand . 39 parts In-Stock

1+ parts

$3.508

100+ parts

$3.333

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$3.333

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39

$3.508

$3.333

$3.333

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Parana Technologies

USA . 260 parts In-Stock

1+ parts

$3.524

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$4.048

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260

$3.524

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$4.048

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DigiPath Technology Company

USA . 1,375 parts In-Stock

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$3.881

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1,375

$3.881

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IDEA Electronic Components Group

UK . 2,206 parts In-Stock

1+ parts

$3.960

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$3.564

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2,206

$3.960

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$3.564

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ChromeModa Solutions

Germany . 1,560 parts In-Stock

1+ parts

$3.960

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$3.247

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1,560

$3.960

$3.247

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Corohmni

South Africa . 6 parts In-Stock

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$12.829

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6

$12.829

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Authorized Procurement Solutions

USA . 58,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 10,375 parts In-Stock

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Lixinc

USA . 7,510 parts In-Stock

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Futuretech Components

Singapore . 739 parts In-Stock

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Kepictronics

USA . 250 parts In-Stock

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Overview

Unleash the power of the LM5109BQNGTTQ1 from Texas Instruments, a top-of-the-line MOSFET Gate Driver that redefines efficiency and reliability. Crafted with precision by a trusted manufacturer, this driver is designed to elevate performance in automotive applications with its high side driver capability and true output polarity. With a compact package style and a wide temperature range, this driver ensures seamless operation even in the harshest conditions. Say goodbye to compromises and hello to unparalleled value with the LM5109BQNGTTQ1, where quality meets innovation for exceptional results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the components inside, making the product reliable and long-lasting.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving time and effort during assembly.

Maximum Supply Voltage: 14 V

With a maximum supply voltage of 14 V, this gate driver can handle high voltage applications effectively.

Screening Level: AEC-Q100

AEC-Q100 screening ensures that the gate driver meets the stringent quality and reliability standards required for automotive applications.

Package Shape: SQUARE

The square shape of the package provides a compact and space-saving design, ideal for applications with limited space.

No. of Terminals: 8

With 8 terminals, this gate driver offers flexibility in connectivity and allows for additional features or functions to be integrated.

Package Style: SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline, heat sink/slug, and very thin profile package style enhances thermal dissipation and reduces space requirements, making it suitable for compact designs.

Minimum Supply Voltage: 8 V

The minimum supply voltage of 8 V ensures reliable operation even in low voltage conditions.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this gate driver can withstand elevated temperatures without compromising performance.

Minimum Operating Temperature: -40 °C

The minimum operating temperature of -40°C ensures operation in a wide range of environments, including harsh conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides a stable and reliable connection, reducing the risk of corrosion and ensuring long-term performance.

Terminal Position: DUAL

Dual terminal position allows for flexible and versatile installation options, accommodating different PCB layouts and configurations.

Maximum Seated Height: 0.8 mm

The maximum seated height of 0.8 mm enables a low profile design, ideal for applications with height constraints.

Width: 4 mm

The compact width of 4 mm contributes to a space-efficient layout and ease of integration into tight spaces.

Output Polarity: TRUE

True output polarity ensures correct signal transmission, preventing errors and ensuring precise control of the MOSFETs.

High Side Driver: YES

Having a high side driver allows for efficient control of MOSFETs in high voltage applications, enhancing overall performance and reliability.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering during assembly, contributing to the product's reliability.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C supports the soldering process and ensures a secure bond between the gate driver and PCB.

Length: 4 mm

The compact length of 4 mm contributes to a space-efficient design and easy integration into various applications.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade indicates that the gate driver meets the rigorous temperature requirements for automotive applications, ensuring reliable performance in harsh environments.

Maximum Output Current: 1 A

The maximum output current of 1 A enables efficient and reliable drive capability for MOSFETs, supporting various load requirements.

No. of Channels: 2

Having 2 channels allows for independent and simultaneous control of multiple MOSFETs, enhancing flexibility and versatility in circuit design.

Terminal Form: NO LEAD

The no-lead terminal form simplifies the assembly process and improves reliability by eliminating the risk of lead-related issues.

Maximum Supply Current: 2.9 mA

With a maximum supply current of 2.9 mA, the gate driver operates efficiently and minimizes power consumption, ideal for energy-conscious applications.

Nominal Supply Voltage: 12 V

The nominal supply voltage of 12 V ensures compatibility with standard voltage levels, simplifying integration into existing systems.

Turn-on Time: 0.056 us

The fast turn-on time of 0.056 microseconds ensures quick and effective switching of MOSFETs, improving overall system response and performance.

Terminal Pitch: 0.8 mm

The terminal pitch of 0.8 mm enables precise and secure connections, contributing to the reliability and stability of the gate driver.

Nominal Output Peak Current Limit: 1 A

The nominal output peak current limit of 1 A protects the gate driver and MOSFETs from excessive current, ensuring safe and reliable operation.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Being a half-bridge based MOSFET driver provides efficient control and management of power electronics, making it suitable for a wide range of applications.

Turn-off Time: 0.056 us

The fast turn-off time of 0.056 microseconds ensures rapid switching of MOSFETs, reducing power loss and improving efficiency in the system.

Technical Specifications

MOSFET Gate Drivers LM5109BQNGTTQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Length:

4 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

1 A

Nominal Output Peak Current Limit:

1 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

.8 mm

Maximum Supply Current:

2.9 mA

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

8 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.056 us

Turn-on Time:

.056 us

Width:

4 mm

Trade Compliance

LM5109BQNGTTQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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