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UCC5390ECDWVR

Texas Instruments

UCC5390ECDWVR by Texas Instruments

UCC5390ECDWVR by Texas Instruments is a MOSFET gate driver with a max supply voltage of 33V and built-in transient and under voltage protections. It operates in automotive-grade temperatures, has a turn-on/off time of 0.1us, and can handle a max output current of 17A. Ideal for driving IGBT/MOSFETs in automotive applications.

Median Price

$2.030

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 241,782 parts In-Stock

1+ parts

$2.030

100+ parts

$1.779

1k+ parts

$1.005

10k+ parts

-

241,782

$2.030

$1.779

$1.005

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DigiKey

USA . 2,087 parts In-Stock

1+ parts

$3.130

100+ parts

$1.931

1k+ parts

$1.798

10k+ parts

-

2,087

$3.130

$1.931

$1.798

-

Mouser Electronics

USA . 1,273 parts In-Stock

1+ parts

$3.130

100+ parts

$1.940

1k+ parts

$1.650

10k+ parts

$1.580

1,273

$3.130

$1.940

$1.650

$1.580

Arrow

USA . 4,000 parts In-Stock

1+ parts

-

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-

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$1.712

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4,000

-

-

$1.712

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Chip1Stop

Japan . 1,000 parts In-Stock

1+ parts

-

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-

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$1.210

10k+ parts

-

1,000

-

-

$1.210

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 39 parts In-Stock

1+ parts

$1.524

100+ parts

-

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39

$1.524

-

-

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Digiode

USA . 3,504 parts In-Stock

1+ parts

$1.928

100+ parts

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3,504

$1.928

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Vyrian

USA . 50,452 parts In-Stock

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50,452

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Chip Stock

USA . 9,800 parts In-Stock

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9,800

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Bristol Electronics

USA . 1,735 parts In-Stock

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1,735

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ComSIT Distribution GmbH

Germany . 536 parts In-Stock

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536

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Distributors (Availability)

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Ampacity Inc.

Singapore . 50,555 parts In-Stock

1+ parts

$1.000

100+ parts

-

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50,555

$1.000

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Semicontronic

India . 50,329 parts In-Stock

1+ parts

$1.000

100+ parts

$0.975

1k+ parts

$0.970

10k+ parts

-

50,329

$1.000

$0.975

$0.970

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$1.493

100+ parts

-

1k+ parts

$1.434

10k+ parts

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500

$1.493

-

$1.434

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Continental Prestige Electronics

USA . 6,502 parts In-Stock

1+ parts

$1.524

100+ parts

-

1k+ parts

-

10k+ parts

$1.493

6,502

$1.524

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-

$1.493

Argo Parts USA

USA . 4,432 parts In-Stock

1+ parts

$1.524

100+ parts

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4,432

$1.524

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Corphita

USA . 2,682 parts In-Stock

1+ parts

$1.827

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2,682

$1.827

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$3.341

100+ parts

$3.174

1k+ parts

$3.174

10k+ parts

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200

$3.341

$3.174

$3.174

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Corohmni

South Africa . 189 parts In-Stock

1+ parts

$4.696

100+ parts

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189

$4.696

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Parana Technologies

USA . 1,832 parts In-Stock

1+ parts

$8.734

100+ parts

$811.127

1k+ parts

$7.861

10k+ parts

-

1,832

$8.734

$811.127

$7.861

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DigiPath Technology Company

USA . 1,150 parts In-Stock

1+ parts

$9.618

100+ parts

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1,150

$9.618

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ChromeModa Solutions

Germany . 1,478 parts In-Stock

1+ parts

$9.814

100+ parts

$8.047

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1,478

$9.814

$8.047

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IDEA Electronic Components Group

UK . 389 parts In-Stock

1+ parts

$9.814

100+ parts

$9.323

1k+ parts

$8.833

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389

$9.814

$9.323

$8.833

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Lixinc

USA . 12,828 parts In-Stock

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12,828

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,000 parts In-Stock

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Robosynatics

Brazil . 950 parts In-Stock

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950

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Lucentia Tech

USA . 950 parts In-Stock

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$85.314

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$85.314

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$85.314

950

-

$85.314

$85.314

$85.314

Perfect Parts

USA . 94 parts In-Stock

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94

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Overview

Enhance the performance of your MOSFET applications with the UCC5390ECDWVR by Texas Instruments. Crafted with precision and quality in mind, this innovative MOSFET gate driver offers built-in protections against transients and under voltage, ensuring reliability and durability. With a wide range of operating temperatures and a high output current of 17A, this product is perfect for automotive and industrial applications. Trust Texas Instruments to deliver cutting-edge technology that provides unmatched value and benefits to customers seeking top-of-the-line performance. Elevate your projects with the UCC5390ECDWVR today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product suitable for various environments.

Maximum Supply Voltage: 15 V

Allows for reliable operation within a safe voltage range, preventing potential damage to the device.

Built-in Protections: TRANSIENT; UNDER VOLTAGE

Enhances the reliability of the device by offering protection against transient events and undervoltage situations.

Maximum Output Current: 17 A

Capable of handling high current loads, making it suitable for applications requiring robust performance.

Interface IC Type: BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER

Versatile interface IC type allows for compatibility with different types of IGBT and MOSFET devices, increasing the product's usability.

Technical Specifications

MOSFET Gate Drivers UCC5390ECDWVR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Built-in Protections:

TRANSIENT; UNDER VOLTAGE

High Side Driver:

NO

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

7.5 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE AND SINK

Maximum Output Current:

17 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

2.8 mm

Maximum Supply Voltage:

15 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage-1:

33 V

Minimum Supply Voltage-1:

13.2 V

Nominal Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.1 us

Turn-on Time:

.1 us

Width:

5.85 mm

Trade Compliance

UCC5390ECDWVR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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