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UCC5350MCDWVR

Texas Instruments

UCC5350MCDWVR by Texas Instruments

UCC5350MCDWVR by Texas Instruments is a MOSFET gate driver with a max supply voltage of 33V and a min operating temperature of -40°C. It is commonly used in automotive applications for driving IGBTs or MOSFETs, offering a max output current of 10A and a turn-on/off time of 0.1us.

Median Price

$1.956

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 105,094 parts In-Stock

1+ parts

$1.613

100+ parts

$1.332

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$0.720

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105,094

$1.613

$1.332

$0.720

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Mouser Electronics

USA . 5,288 parts In-Stock

1+ parts

$2.300

100+ parts

$1.400

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$1.320

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5,288

$2.300

$1.400

$1.320

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DigiKey

USA . 1,539 parts In-Stock

1+ parts

$2.300

100+ parts

$1.390

1k+ parts

$1.273

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1,539

$2.300

$1.390

$1.273

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Chip1Stop

Japan . 11,000 parts In-Stock

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-

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$0.929

10k+ parts

$0.861

11,000

-

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$0.929

$0.861

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$1.460

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100

$1.460

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Digiode

USA . 3,817 parts In-Stock

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$1.532

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3,817

$1.532

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Chip Stock

USA . 7,900 parts In-Stock

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7,900

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Vyrian

USA . 4,832 parts In-Stock

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Cyclops Electronics Ltd

UK . 3,500 parts In-Stock

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3,500

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Distributors (Availability)

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Ampacity Inc.

Singapore . 33,392 parts In-Stock

1+ parts

$0.790

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-

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33,392

$0.790

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Semicontronic

India . 33,245 parts In-Stock

1+ parts

$0.790

100+ parts

$0.770

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$0.766

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33,245

$0.790

$0.770

$0.766

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Corphita

USA . 2,099 parts In-Stock

1+ parts

$1.452

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2,099

$1.452

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Argo Parts USA

USA . 2,293 parts In-Stock

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$1.460

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$1.460

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Netroflash

USA . 1,000 parts In-Stock

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$1.460

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$1.387

10k+ parts

$1.358

1,000

$1.460

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$1.387

$1.358

Continental Prestige Electronics

USA . 106 parts In-Stock

1+ parts

$1.460

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$1.431

106

$1.460

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$1.431

Corohmni

South Africa . 62 parts In-Stock

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$8.362

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62

$8.362

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Advanced Electronics

New Zealand . 70 parts In-Stock

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$10.501

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$9.976

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$9.976

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70

$10.501

$9.976

$9.976

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Parana Technologies

USA . 683 parts In-Stock

1+ parts

$12.867

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$13.346

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683

$12.867

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$13.346

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DigiPath Technology Company

USA . 2,181 parts In-Stock

1+ parts

$14.168

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$13.034

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2,181

$14.168

$13.034

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ChromeModa Solutions

Germany . 6,368 parts In-Stock

1+ parts

$14.457

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$11.855

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6,368

$14.457

$11.855

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IDEA Electronic Components Group

UK . 1,563 parts In-Stock

1+ parts

$14.457

100+ parts

$13.734

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$13.011

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1,563

$14.457

$13.734

$13.011

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Lixinc

USA . 8,787 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,000 parts In-Stock

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Robosynatics

Brazil . 100 parts In-Stock

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Lucentia Tech

USA . 100 parts In-Stock

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Overview

Texas Instruments, a renowned manufacturer in the industry, presents the UCC5350MCDWVR MOSFET Gate Driver. This small outline, surface mount device offers an array of benefits and advantages for customers. With its true output polarity and high-quality construction, it is perfect for various applications. Its wide operating temperature range and automotive-grade ensure durability and reliability. The UCC5350MCDWVR delivers exceptional performance, providing customers with superior value and peace of mind. Experience the difference with Texas Instruments' UCC5350MCDWVR MOSFET Gate Driver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and resistance to environmental conditions, making the product reliable for long-term usage.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation, reducing assembly time and effort.

Maximum Supply Voltage: 15 V

With a high maximum supply voltage, this gate driver can handle a wide range of power requirements, making it versatile and suitable for various applications.

Package Shape: RECTANGULAR

The rectangular shape of the package provides efficient use of space, enabling compact designs and saving valuable board real estate.

No. of Terminals: 8

Having 8 terminals allows for flexible connectivity options, enabling seamless integration into different circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers improved thermal performance and efficient heat dissipation, ensuring the reliability and longevity of the gate driver.

Minimum Supply Voltage: 3 V

The low minimum supply voltage requirement makes this gate driver compatible with a wide range of power sources, enhancing its usability and versatility.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this gate driver can withstand demanding environments, ensuring optimal performance even under harsh conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish provides excellent corrosion resistance, enabling reliable connections and enhancing the overall durability of the product.

Terminal Position: DUAL

The dual terminal position enables easy and flexible installation, allowing for various connection orientations and orientations, simplifying the overall design process.

Maximum Seated Height: 2.8 mm

The compact maximum seated height enables low-profile designs, making this gate driver suitable for space-constrained applications.

Width: 5.85 mm

The narrow width of the gate driver ensures it occupies minimal board space, providing design flexibility and allowing for efficient use of limited area.

Output Polarity: TRUE

The true output polarity ensures proper operation and compatibility with other components, eliminating compatibility issues and enhancing system performance.

Maximum Time At Peak Reflow Temperature (s): 30

The gate driver's ability to withstand high temperatures for extended periods ensures reliability during soldering processes, making it suitable for automated production lines.

Peak Reflow Temperature °C: 260

The gate driver's high peak reflow temperature capability allows for compatibility with standard reflow soldering processes, facilitating seamless assembly in manufacturing.

Length: 7.5 mm

The compact length of the gate driver contributes to space-saving designs, providing flexibility and enabling efficient board placement.

Temperature Grade: AUTOMOTIVE

The gate driver's automotive temperature grade certification ensures it meets stringent quality and reliability standards, making it suitable for automotive applications with demanding operating conditions.

Maximum Output Current: 10 A

With a high maximum output current rating, this gate driver can drive power MOSFETs and IGBTs effectively, making it a reliable choice for high-power applications.

Terminal Form: GULL WING

The gull wing terminal form simplifies PCB assembly, making it easier to solder and ensuring robust connections for improved reliability.

Maximum Supply Current: 2.4 mA

The low maximum supply current requirement minimizes power consumption, leading to energy-efficient operation and reduced overall system costs.

Input Characteristics: STANDARD

The gate driver's standard input characteristics make it compatible with a wide range of control signals, enabling seamless integration into various control systems.

Nominal Supply Voltage: 3.3 V

The nominal supply voltage of 3.3 V ensures compatibility with commonly used power sources, making this gate driver a convenient and versatile choice for many applications.

Turn-on Time: 0.1 us

The fast turn-on time minimizes delays in power switching, enhancing system efficiency and enabling precise control.

Terminal Pitch: 1.27 mm

The small terminal pitch allows for compact connections and streamlined PCB layouts, optimizing board space utilization and enabling high-density designs.

Moisture Sensitivity Level (MSL): 2

The moisture sensitivity level 2 classification ensures proper handling and storage procedures, minimizing the risk of component damage and ensuring long-term reliability.

Nominal Output Peak Current Limit: 10 A

The nominal output peak current limit of 10 A enables robust and efficient power delivery, making this gate driver suitable for demanding applications.

Interface IC Type: BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER

The buffer or inverter-based interface IC type provides flexibility and compatibility with different gate control configurations, allowing for seamless integration with both IGBTs and MOSFETs.

Turn-off Time: 0.1 us

The fast turn-off time ensures rapid power switching transitions, improving overall system response time and enabling precise control.

Technical Specifications

MOSFET Gate Drivers UCC5350MCDWVR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Input Characteristics:

STANDARD

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

7.5 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

10 A

Nominal Output Peak Current Limit:

10 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.45

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

2.8 mm

Maximum Supply Current:

2.4 mA

Maximum Supply Voltage:

15 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage-1:

33 V

Minimum Supply Voltage-1:

13.2 V

Nominal Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.1 us

Turn-on Time:

.1 us

Width:

5.85 mm

Trade Compliance

UCC5350MCDWVR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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