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UCC5350SBD

Texas Instruments

UCC5350SBD by Texas Instruments

UCC5350SBD by Texas Instruments is a MOSFET gate driver with a max supply voltage of 33V and built-in transient and under-voltage protections. It operates in automotive-grade temperatures from -40 to 125°C, offering a peak output current of 10A. Ideal for buffer or inverter-based IGBT/MOSFET driver applications requiring fast turn-on/off times.

Median Price

$2.666

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 57,905 parts In-Stock

1+ parts

$2.666

100+ parts

$2.202

1k+ parts

$1.190

10k+ parts

-

57,905

$2.666

$2.202

$1.190

-

Mouser Electronics

USA . 19 parts In-Stock

1+ parts

$3.070

100+ parts

$2.300

1k+ parts

$2.130

10k+ parts

$1.830

19

$3.070

$2.300

$2.130

$1.830

Arrow

USA . 300 parts In-Stock

1+ parts

-

100+ parts

$1.973

1k+ parts

$1.530

10k+ parts

$1.421

300

-

$1.973

$1.530

$1.421

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$1.683

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$1.683

-

-

-

Digiode

USA . 2,762 parts In-Stock

1+ parts

$2.533

100+ parts

-

1k+ parts

-

10k+ parts

-

2,762

$2.533

-

-

-

Vyrian

USA . 9,163 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,163

-

-

-

-

Sensible Micro Corp

USA . 289 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

289

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 14,485 parts In-Stock

1+ parts

$1.680

100+ parts

$1.638

1k+ parts

$1.630

10k+ parts

-

14,485

$1.680

$1.638

$1.630

-

Ampacity Inc.

Singapore . 14,074 parts In-Stock

1+ parts

$1.680

100+ parts

-

1k+ parts

-

10k+ parts

-

14,074

$1.680

-

-

-

Argo Parts USA

USA . 2,082 parts In-Stock

1+ parts

$1.683

100+ parts

-

1k+ parts

-

10k+ parts

-

2,082

$1.683

-

-

-

Corphita

USA . 2,867 parts In-Stock

1+ parts

$2.399

100+ parts

-

1k+ parts

-

10k+ parts

-

2,867

$2.399

-

-

-

Corohmni

South Africa . 92 parts In-Stock

1+ parts

$10.517

100+ parts

-

1k+ parts

-

10k+ parts

-

92

$10.517

-

-

-

Parana Technologies

USA . 468 parts In-Stock

1+ parts

$12.396

100+ parts

-

1k+ parts

$12.835

10k+ parts

-

468

$12.396

-

$12.835

-

ChromeModa Solutions

Germany . 6,352 parts In-Stock

1+ parts

$13.928

100+ parts

$11.421

1k+ parts

-

10k+ parts

-

6,352

$13.928

$11.421

-

-

IDEA Electronic Components Group

UK . 2,009 parts In-Stock

1+ parts

$13.928

100+ parts

$13.232

1k+ parts

$12.535

10k+ parts

-

2,009

$13.928

$13.232

$12.535

-

Advanced Electronics

New Zealand . 1,603 parts In-Stock

1+ parts

$14.632

100+ parts

$13.901

1k+ parts

$13.901

10k+ parts

-

1,603

$14.632

$13.901

$13.901

-

Lixinc

USA . 3,108 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,108

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

DigiPath Technology Company

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$12.557

1k+ parts

-

10k+ parts

-

2,000

-

$12.557

-

-

Overview

Unleash the power of your electronic applications with the high-quality UCC5350SBD MOSFET Gate Driver by Texas Instruments. This compact and versatile device is designed to optimize performance, provide built-in protections, and operate efficiently in a wide range of temperatures. Whether you're working on automotive systems, industrial controls, or power supplies, this innovative product delivers enhanced reliability and precision. Elevate your projects with the exceptional value and benefits that the UCC5350SBD offers, making it a must-have component for your next design endeavor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the gate driver.

Surface Mount: YES

Allows for easy and convenient installation on surface mount PCBs.

Maximum Supply Voltage: 15 V

Suitable for applications requiring up to 15V of supply voltage.

Package Shape: RECTANGULAR

Facilitates easy integration into existing circuit designs.

Built-in Protections: TRANSIENT; UNDER VOLTAGE

Enhances the reliability and safety of the gate driver by protecting against transient events and under voltage conditions.

Number of Terminals: 8

Sufficient number of terminals for connecting to external components in the circuit.

Maximum Operating Temperature: 125 °C

Can withstand high temperature environments, making it suitable for automotive applications.

Minimum Operating Temperature: -40 °C

Can operate in low temperature conditions, increasing its versatility for different environments.

Maximum Output Current: 10 A

Capable of handling high output currents for driving MOSFETs.

Interface IC Type: BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER

Compatible with various IGBT and MOSFET devices, providing flexibility in use.

Technical Specifications

MOSFET Gate Drivers UCC5350SBD attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Built-in Protections:

TRANSIENT; UNDER VOLTAGE

High Side Driver:

NO

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

7.5 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE AND SINK

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

2.8 mm

Maximum Supply Voltage:

15 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage-1:

33 V

Minimum Supply Voltage-1:

9.5 V

Nominal Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.1 us

Turn-on Time:

.1 us

Width:

5.85 mm

Trade Compliance

UCC5350SBD Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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