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UCC5310MCDR

Texas Instruments

UCC5310MCDR by Texas Instruments

UCC5310MCDR by Texas Instruments is a MOSFET gate driver with a max supply voltage of 33V and built-in protections for transient and under-voltage conditions. This small outline package has 8 terminals, operates in automotive temperature grades, and provides a peak output current of 2.2A. Ideal for buffer or inverter-based IGBT/MOSFET driver applications requiring fast turn-on/off times.

Median Price

$2.450

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 18,038 parts In-Stock

1+ parts

$1.494

100+ parts

$1.234

1k+ parts

$0.667

10k+ parts

-

18,038

$1.494

$1.234

$0.667

-

DigiKey

USA . 2,851 parts In-Stock

1+ parts

$2.450

100+ parts

$1.484

1k+ parts

$1.363

10k+ parts

-

2,851

$2.450

$1.484

$1.363

-

Mouser Electronics

USA . 1,647 parts In-Stock

1+ parts

$2.450

100+ parts

$1.490

1k+ parts

$1.320

10k+ parts

$1.240

1,647

$2.450

$1.490

$1.320

$1.240

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$1.025

100+ parts

-

1k+ parts

-

10k+ parts

-

10

$1.025

-

-

-

Digiode

USA . 543 parts In-Stock

1+ parts

$1.419

100+ parts

-

1k+ parts

-

10k+ parts

-

543

$1.419

-

-

-

Chip Stock

USA . 26,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

26,000

-

-

-

-

Vyrian

USA . 7,821 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,821

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bastille Electronics

Australia . 10 parts In-Stock

1+ parts

$1.025

100+ parts

$0.974

1k+ parts

$0.925

10k+ parts

$0.912

10

$1.025

$0.974

$0.925

$0.912

Continental Prestige Electronics

USA . 3,756 parts In-Stock

1+ parts

$1.025

100+ parts

-

1k+ parts

-

10k+ parts

$1.005

3,756

$1.025

-

-

$1.005

Argo Parts USA

USA . 2,549 parts In-Stock

1+ parts

$1.025

100+ parts

-

1k+ parts

-

10k+ parts

-

2,549

$1.025

-

-

-

Corohmni

South Africa . 402 parts In-Stock

1+ parts

$1.030

100+ parts

-

1k+ parts

-

10k+ parts

-

402

$1.030

-

-

-

Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$1.061

100+ parts

$1.008

1k+ parts

$1.008

10k+ parts

-

40

$1.061

$1.008

$1.008

-

Ampacity Inc.

Singapore . 7,760 parts In-Stock

1+ parts

$1.270

100+ parts

-

1k+ parts

-

10k+ parts

-

7,760

$1.270

-

-

-

Semicontronic

India . 7,227 parts In-Stock

1+ parts

$1.270

100+ parts

$1.238

1k+ parts

$1.232

10k+ parts

-

7,227

$1.270

$1.238

$1.232

-

Corphita

USA . 1,813 parts In-Stock

1+ parts

$1.345

100+ parts

-

1k+ parts

-

10k+ parts

-

1,813

$1.345

-

-

-

Parana Technologies

USA . 2,085 parts In-Stock

1+ parts

$7.503

100+ parts

-

1k+ parts

$8.006

10k+ parts

-

2,085

$7.503

-

$8.006

-

DigiPath Technology Company

USA . 1,576 parts In-Stock

1+ parts

$8.261

100+ parts

$7.600

1k+ parts

-

10k+ parts

-

1,576

$8.261

$7.600

-

-

ChromeModa Solutions

Germany . 5,372 parts In-Stock

1+ parts

$8.430

100+ parts

$6.913

1k+ parts

-

10k+ parts

-

5,372

$8.430

$6.913

-

-

IDEA Electronic Components Group

UK . 763 parts In-Stock

1+ parts

$8.430

100+ parts

$8.008

1k+ parts

$7.587

10k+ parts

-

763

$8.430

$8.008

$7.587

-

Lixinc

USA . 17,219 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

17,219

-

-

-

-

A-Z Elektronik GmbH

Germany . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Futuretech Components

Singapore . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Overview

Enhance the performance and reliability of your MOSFET applications with the UCC5310MCDR by Texas Instruments. This high-quality MOSFET gate driver offers built-in protections against transients and under voltages, ensuring optimal functionality in a wide range of scenarios. With a compact design and automotive-grade temperature rating, this product provides value and versatility for your projects. Trust Texas Instruments for cutting-edge technology and superior quality in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy and quick installation on PCBs, saving assembly time and space.

Maximum Supply Voltage: 15 V

Allows for compatibility with a wide range of power supply systems while ensuring safe operation within specified limits.

Built-in Protections: TRANSIENT; UNDER VOLTAGE

The built-in transient and under-voltage protections enhance the reliability and safety of the device, protecting it from potential damage.

Maximum Output Current: 2.2 A

The high maximum output current capability makes this MOSFET gate driver suitable for driving various power MOSFETs efficiently.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this MOSFET gate driver can withstand harsh environmental conditions and operate reliably in automotive and industrial applications.

Technical Specifications

MOSFET Gate Drivers UCC5310MCDR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Built-in Protections:

TRANSIENT; UNDER VOLTAGE

High Side Driver:

NO

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

7.5 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE AND SINK

Maximum Output Current:

2.2 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

2.8 mm

Maximum Supply Voltage:

15 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage-1:

33 V

Minimum Supply Voltage-1:

13.2 V

Nominal Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.075 us

Turn-on Time:

.075 us

Width:

5.85 mm

Trade Compliance

UCC5310MCDR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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