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UCC27324DGNG4

Texas Instruments

UCC27324DGNG4 by Texas Instruments

UCC27324DGNG4 by Texas Instruments is a MOSFET gate driver with 2 functions, operating at supply voltages of 4.5-15V. It features a totem-pole output and is suitable for automotive applications due to its wide temperature range (-40 to 125°C) and small package size (3x3mm).

Median Price

$1.870

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 394 parts In-Stock

1+ parts

$1.870

100+ parts

$1.350

1k+ parts

$1.110

10k+ parts

$0.795

394

$1.870

$1.350

$1.110

$0.795

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$0.935

100+ parts

-

1k+ parts

-

10k+ parts

-

650

$0.935

-

-

-

Digiode

USA . 948 parts In-Stock

1+ parts

$1.776

100+ parts

-

1k+ parts

-

10k+ parts

-

948

$1.776

-

-

-

Vyrian

USA . 6,016 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,016

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 4,141 parts In-Stock

1+ parts

$0.775

100+ parts

-

1k+ parts

-

10k+ parts

$0.759

4,141

$0.775

-

-

$0.759

Argo Parts USA

USA . 3,580 parts In-Stock

1+ parts

$0.775

100+ parts

-

1k+ parts

-

10k+ parts

-

3,580

$0.775

-

-

-

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.935

100+ parts

$0.916

1k+ parts

-

10k+ parts

-

2,000

$0.935

$0.916

-

-

Semicontronic

India . 272 parts In-Stock

1+ parts

$1.590

100+ parts

$1.550

1k+ parts

$1.542

10k+ parts

-

272

$1.590

$1.550

$1.542

-

Ampacity Inc.

Singapore . 85 parts In-Stock

1+ parts

$1.590

100+ parts

-

1k+ parts

-

10k+ parts

-

85

$1.590

-

-

-

Corphita

USA . 3,230 parts In-Stock

1+ parts

$1.683

100+ parts

-

1k+ parts

-

10k+ parts

-

3,230

$1.683

-

-

-

Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$8.966

100+ parts

$8.159

1k+ parts

$7.352

10k+ parts

-

150

$8.966

$8.159

$7.352

-

AZTECH Wire

Italy . 458 parts In-Stock

1+ parts

$11.977

100+ parts

-

1k+ parts

-

10k+ parts

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458

$11.977

-

-

-

Corohmni

South Africa . 314 parts In-Stock

1+ parts

$12.089

100+ parts

-

1k+ parts

-

10k+ parts

-

314

$12.089

-

-

-

Parana Technologies

USA . 80 parts In-Stock

1+ parts

$12.839

100+ parts

-

1k+ parts

$13.313

10k+ parts

-

80

$12.839

-

$13.313

-

IDEA Electronic Components Group

UK . 2,283 parts In-Stock

1+ parts

$14.426

100+ parts

$13.705

1k+ parts

$12.983

10k+ parts

-

2,283

$14.426

$13.705

$12.983

-

ChromeModa Solutions

Germany . 2,210 parts In-Stock

1+ parts

$14.426

100+ parts

$11.829

1k+ parts

-

10k+ parts

-

2,210

$14.426

$11.829

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-

Microchip USA

USA . 2,728 parts In-Stock

1+ parts

-

100+ parts

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-

10k+ parts

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2,728

-

-

-

-

DigiPath Technology Company

USA . 1,122 parts In-Stock

1+ parts

-

100+ parts

$13.006

1k+ parts

-

10k+ parts

-

1,122

-

$13.006

-

-

Perfect Parts

USA . 438 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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438

-

-

-

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Kepictronics

USA . 40 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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40

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Overview

Experience the superior quality and reliability of Texas Instruments with the UCC27324DGNG4 MOSFET Gate Driver. This innovative product offers exceptional performance in a wide range of applications, from automotive to industrial. With its advanced technology and dual-channel design, this gate driver provides customers with precise control and efficiency. Trust Texas Instruments to deliver value and benefits that will exceed your expectations. Choose the UCC27324DGNG4 for your next project and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for electronic components due to its lightweight and durable properties.

Surface Mount: YES

Surface mount components save space and are easier to install compared to through-hole components.

Maximum Supply Voltage: 15 V

Allows for a wide range of operating voltages, increasing flexibility in different applications.

No. of Functions: 2

Having multiple functions in one component simplifies the overall design and reduces the need for additional components.

Package Shape: SQUARE

Square packages are easy to handle and provide a uniform footprint, making it easier to integrate into circuit designs.

Maximum Operating Temperature: 125 °C

With a high operating temperature, this driver can be used in a variety of environments without risk of damage.

Technology: BICMOS

BICMOS technology offers a good balance between the advantages of both bipolar and CMOS technologies, providing high performance and low power consumption.

Technical Specifications

MOSFET Gate Drivers UCC27324DGNG4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Input Characteristics:

STANDARD

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e4

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

TOTEM-POLE

Maximum Output Current:

4 A

Nominal Output Peak Current Limit:

4 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

4.5/15

Qualification:

Not Qualified

Maximum Seated Height:

1.07 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

.75 mA

Maximum Supply Voltage:

15 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

14 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Turn-off Time:

.05 us

Turn-on Time:

.04 us

Width:

3 mm

Trade Compliance

UCC27324DGNG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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