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UCC27611DRVT

Texas Instruments

UCC27611DRVT by Texas Instruments

UCC27611DRVT by Texas Instruments is a MOSFET gate driver with 6A output current, 12V nominal voltage, and -40 to 140°C operating temperature range. It is designed for automotive applications, featuring a small outline package with surface mount capability and dual terminal position for efficient heat dissipation.

Median Price

$2.106

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 111,141 parts In-Stock

1+ parts

$1.922

100+ parts

$1.587

1k+ parts

$0.858

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-

111,141

$1.922

$1.587

$0.858

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Chip1Stop

Japan . 195 parts In-Stock

1+ parts

$2.290

100+ parts

$1.370

1k+ parts

$1.170

10k+ parts

$1.090

195

$2.290

$1.370

$1.170

$1.090

DigiKey

USA . 3,338 parts In-Stock

1+ parts

$2.570

100+ parts

$1.568

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-

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3,338

$2.570

$1.568

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Mouser Electronics

USA . 412 parts In-Stock

1+ parts

$2.570

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$1.570

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$1.350

10k+ parts

$1.320

412

$2.570

$1.570

$1.350

$1.320

RS (Exports)

UK . 360 parts In-Stock

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-

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$1.425

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360

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$1.425

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Arrow

USA . 250 parts In-Stock

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$1.168

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$1.047

250

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$1.047

Distributors (In-Stock)

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Nova Conductors

Japan . 87 parts In-Stock

1+ parts

$1.547

100+ parts

-

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87

$1.547

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Digiode

USA . 4,938 parts In-Stock

1+ parts

$1.826

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4,938

$1.826

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Vyrian

USA . 19,462 parts In-Stock

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19,462

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NexGen Digital

USA . 2,306 parts In-Stock

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2,306

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Pegasus Components GmbH

Germany . 77 parts In-Stock

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77

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Connector Distribution Corp

USA . 20 parts In-Stock

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Right Parts Inc.

USA . 20 parts In-Stock

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20

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 19,366 parts In-Stock

1+ parts

$0.990

100+ parts

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19,366

$0.990

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Semicontronic

India . 19,283 parts In-Stock

1+ parts

$0.990

100+ parts

$0.965

1k+ parts

$0.960

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19,283

$0.990

$0.965

$0.960

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Bastille Electronics

Australia . 900 parts In-Stock

1+ parts

$1.547

100+ parts

$1.470

1k+ parts

$1.396

10k+ parts

$1.377

900

$1.547

$1.470

$1.396

$1.377

Continental Prestige Electronics

USA . 6,297 parts In-Stock

1+ parts

$1.547

100+ parts

-

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$1.516

6,297

$1.547

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-

$1.516

Argo Parts USA

USA . 1,359 parts In-Stock

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$1.547

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1,359

$1.547

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Corphita

USA . 1,308 parts In-Stock

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$1.730

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1,308

$1.730

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Corohmni

South Africa . 191 parts In-Stock

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$2.684

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191

$2.684

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Parana Technologies

USA . 1,047 parts In-Stock

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$5.695

100+ parts

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$6.488

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1,047

$5.695

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$6.488

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ChromeModa Solutions

Germany . 5,634 parts In-Stock

1+ parts

$6.399

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$5.247

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5,634

$6.399

$5.247

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IDEA Electronic Components Group

UK . 424 parts In-Stock

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$6.399

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$5.759

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424

$6.399

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Perfect Parts

USA . 5,088 parts In-Stock

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Lixinc

USA . 1,061 parts In-Stock

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DigiPath Technology Company

USA . 901 parts In-Stock

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$5.769

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901

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$5.769

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iodParts Technologies Inc.

India . 532 parts In-Stock

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532

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Overview

Enhance the performance of your MOSFET applications with the UCC27611DRVT by Texas Instruments. Known for their superior quality and reliability, Texas Instruments offers a top-notch MOSFET Gate Driver that delivers exceptional results. Ideal for automotive use, this small outline driver provides a nominal supply voltage of 12V and a maximum output current of 6A, ensuring optimal efficiency and functionality. Trust in Texas Instruments to provide cutting-edge solutions for all your MOSFET needs.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This material provides durability and protection for the MOSFET gate driver, making it a reliable choice.

Surface Mount

YES - This feature allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Package Shape

SQUARE - The square shape contributes to a compact design, ideal for space-constrained applications.

Power Supplies (V)

12 - With a 12V power supply, this MOSFET gate driver can efficiently operate within a wide range of voltage requirements.

No. of Terminals

6 - The presence of 6 terminals enables versatile connections and compatibility with various systems.

Package Style (Meter)

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE - This package style ensures efficient heat dissipation and a compact design for tight spaces.

Maximum Operating Temperature

140 °C - The high maximum operating temperature allows for reliable performance in demanding environments.

Minimum Operating Temperature

40 °C - The low minimum operating temperature ensures functionality even in extreme cold conditions.

Terminal Finish

NICKEL PALLADIUM GOLD - This terminal finish provides excellent conductivity and corrosion resistance for long-term reliability.

Terminal Position

DUAL - The dual terminal position enhances connectivity and flexibility in circuit designs.

Maximum Seated Height

0.8 mm - The low profile design of the MOSFET gate driver allows for easy integration into compact systems.

Width

2 mm - The narrow width of the gate driver contributes to space-saving and efficient PCB layout.

Maximum Time At Peak Reflow Temperature (s)

30 - The short reflow time ensures quick and effective soldering during assembly processes.

Peak Reflow Temperature °C

260 - The high peak reflow temperature allows for robust solder joints and reliable operation under thermal stress.

Length

2 mm - The compact length of the MOSFET gate driver contributes to a space-efficient design.

Temperature Grade

AUTOMOTIVE - This MOSFET gate driver is suitable for automotive applications, ensuring high reliability in harsh operating conditions.

Maximum Output Current

6 A - With a maximum output current of 6A, this gate driver can effectively drive MOSFETs in various power applications.

Terminal Form

NO LEAD - The no-lead terminal form simplifies assembly and enhances reliability in high vibration environments.

Nominal Supply Voltage

12 V - The nominal supply voltage of 12V ensures compatibility with standard power sources.

Terminal Pitch

0.635 mm - The small terminal pitch allows for precise and secure connections in compact PCB layouts.

Moisture Sensitivity Level (MSL)

2 - The MSL 2 rating indicates that this gate driver has a moderate level of moisture sensitivity, suitable for most manufacturing environments.

Nominal Output Peak Current Limit

6 A - The nominal output peak current limit of 6A provides protection for the MOSFETs and ensures safe operation under varying loads.

Interface IC Type

BUFFER OR INVERTER BASED MOSFET DRIVER - This versatile interface IC type can drive a wide range of MOSFET devices, making it suitable for diverse applications.

Technical Specifications

MOSFET Gate Drivers UCC27611DRVT attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

Length:

2 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

1

No. of Terminals:

6

Maximum Operating Temperature:

140 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

6 A

Nominal Output Peak Current Limit:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.08,25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Sub-Category:

MOSFET Drivers

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

UCC27611DRVT Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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