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2EDL23N06PJ

Infineon Technologies

2EDL23N06PJ by Infineon Technologies

2EDL23N06PJ by Infineon Technologies is a MOSFET gate driver with a max supply voltage of 25V and built-in protections for over current and under voltage. It has a turn-on time of 0.61 us and is ideal for industrial applications requiring high side drivers in small outline packages.

Median Price

$2.210

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,423 parts In-Stock

1+ parts

$2.210

100+ parts

$1.330

1k+ parts

$1.170

10k+ parts

$1.090

1,423

$2.210

$1.330

$1.170

$1.090

Distributors (In-Stock)

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Digiode

USA . 226 parts In-Stock

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$2.223

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-

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226

$2.223

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Sensible Micro Corp

USA . 6,918 parts In-Stock

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VNN

France . 4,501 parts In-Stock

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Rutronik

Germany . 2,500 parts In-Stock

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$1.043

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$1.043

Vyrian

USA . 2,273 parts In-Stock

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ComSIT Distribution GmbH

Germany . 91 parts In-Stock

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Nova Conductors

Japan . 88 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 2,435 parts In-Stock

1+ parts

$1.990

100+ parts

$1.940

1k+ parts

$1.930

10k+ parts

-

2,435

$1.990

$1.940

$1.930

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Ampacity Inc.

Singapore . 2,186 parts In-Stock

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$1.990

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$1.990

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Corphita

USA . 989 parts In-Stock

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$2.106

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989

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Corohmni

South Africa . 502 parts In-Stock

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$5.492

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502

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Advanced Electronics

New Zealand . 750 parts In-Stock

1+ parts

$6.402

100+ parts

$6.082

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$6.082

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750

$6.402

$6.082

$6.082

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Modulus Dynamics

Lithuania . 1,232 parts In-Stock

1+ parts

$8.397

100+ parts

$8.061

1k+ parts

$7.725

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1,232

$8.397

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$7.725

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Lixinc

USA . 19,448 parts In-Stock

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Continental Prestige Electronics

USA . 6,570 parts In-Stock

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Kepictronics

USA . 5,500 parts In-Stock

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Argo Parts USA

USA . 3,818 parts In-Stock

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Bastille Electronics

Australia . 30 parts In-Stock

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Overview

Infineon Silicon-on-Insulator (SOI) Gate Driver ICs are level-shift high voltage gate driver ICs for IGBTs and MOSFETs. The SOI technology is a high-voltage, level-shift technology providing unique, measurable, and best-in-class advantages. These include integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that are causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and reliability, making this product suitable for various industrial applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, reducing assembly time and costs.

Maximum Supply Voltage: 25 V

Supports a high maximum supply voltage, making it suitable for a wide range of power supply applications.

Built-in Protections: OVER CURRENT; UNDER VOLTAGE

Built-in protections ensure the safety and longevity of the connected components by preventing damage from over current and under voltage conditions.

Width: 3.9 mm

Compact width allows for efficient use of space on circuit boards, ideal for designs where space is limited.

Nominal Output Peak Current Limit: 2.3 A

The high output peak current limit allows for driving power MOSFETs efficiently and effectively in various applications.

Turn-on Time: 0.61 us

Fast turn-on time ensures quick response and precise control of the MOSFETs, resulting in improved system performance.

Technical Specifications

MOSFET Gate Drivers 2EDL23N06PJ attributes and parameters. Explore more MOSFET Gate Drivers devices from Infineon Technologies

Specs

Built-in Protections:

OVER CURRENT; UNDER VOLTAGE

High Side Driver:

YES

Input Characteristics:

STANDARD

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE AND SINK

Nominal Output Peak Current Limit:

2.3 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage:

25 V

Minimum Supply Voltage:

10 V

Nominal Supply Voltage:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Turn-off Time:

.59 us

Turn-on Time:

.61 us

Width:

3.9 mm

Trade Compliance

2EDL23N06PJ Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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