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LM5109BQNGTRQ1

Texas Instruments

LM5109BQNGTRQ1 by Texas Instruments

LM5109BQNGTRQ1 by Texas Instruments is a MOSFET gate driver with 2 channels, suitable for automotive applications. It operates b/w -40 to 125 °C and has a max supply voltage of 14 V. With a turn-on/off time of 0.056 us, it features a small outline package style and very thin profile, making it ideal for high side driver applications.

Median Price

$1.535

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,498 parts In-Stock

1+ parts

$1.470

100+ parts

$0.861

1k+ parts

$0.793

10k+ parts

$0.697

1,498

$1.470

$0.861

$0.793

$0.697

Mouser Electronics

USA . 16,759 parts In-Stock

1+ parts

$1.600

100+ parts

$0.943

1k+ parts

$0.873

10k+ parts

$0.765

16,759

$1.600

$0.943

$0.873

$0.765

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 200 parts In-Stock

1+ parts

$0.583

100+ parts

-

1k+ parts

-

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200

$0.583

-

-

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Digiode

USA . 727 parts In-Stock

1+ parts

$1.226

100+ parts

-

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727

$1.226

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Vyrian

USA . 12,778 parts In-Stock

1+ parts

-

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12,778

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Chip Stock

USA . 10,700 parts In-Stock

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10,700

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Infinite Electronics LLP

India . 395 parts In-Stock

1+ parts

-

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395

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 2,158 parts In-Stock

1+ parts

$0.583

100+ parts

-

1k+ parts

-

10k+ parts

$0.571

2,158

$0.583

-

-

$0.571

Argo Parts USA

USA . 542 parts In-Stock

1+ parts

$0.583

100+ parts

-

1k+ parts

-

10k+ parts

$0.566

542

$0.583

-

-

$0.566

Semicontronic

India . 12,781 parts In-Stock

1+ parts

$1.100

100+ parts

$1.072

1k+ parts

$1.067

10k+ parts

-

12,781

$1.100

$1.072

$1.067

-

Corphita

USA . 3,150 parts In-Stock

1+ parts

$1.161

100+ parts

-

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3,150

$1.161

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Ampacity Inc.

Singapore . 12,919 parts In-Stock

1+ parts

$2.390

100+ parts

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12,919

$2.390

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Corohmni

South Africa . 552 parts In-Stock

1+ parts

$5.438

100+ parts

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552

$5.438

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Parana Technologies

USA . 101 parts In-Stock

1+ parts

$9.333

100+ parts

-

1k+ parts

$9.956

10k+ parts

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101

$9.333

-

$9.956

-

Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$10.105

100+ parts

$9.600

1k+ parts

$9.600

10k+ parts

-

150

$10.105

$9.600

$9.600

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DigiPath Technology Company

USA . 1,799 parts In-Stock

1+ parts

$10.277

100+ parts

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1,799

$10.277

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-

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IDEA Electronic Components Group

UK . 1,933 parts In-Stock

1+ parts

$10.487

100+ parts

$9.963

1k+ parts

$9.438

10k+ parts

-

1,933

$10.487

$9.963

$9.438

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ChromeModa Solutions

Germany . 1,149 parts In-Stock

1+ parts

$10.487

100+ parts

$8.599

1k+ parts

-

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1,149

$10.487

$8.599

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Lixinc

USA . 18,862 parts In-Stock

1+ parts

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18,862

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A-Z Elektronik GmbH

Germany . 18,777 parts In-Stock

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18,777

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Alle Elektronik GmbH

Germany . 3,898 parts In-Stock

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3,898

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Kepictronics

USA . 1,264 parts In-Stock

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1,264

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Bastille Electronics

Australia . 120 parts In-Stock

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120

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Overview

Experience the superior quality and reliability of Texas Instruments with the LM5109BQNGTRQ1 MOSFET Gate Driver. This automotive-grade driver offers high-side functionality, true output polarity, and a maximum output current of 1A, making it ideal for a wide range of automotive and industrial applications. With a compact package design and wide operating temperature range, this driver provides value and performance that customers can trust. Trust Texas Instruments to deliver cutting-edge technology and innovation for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection to the internal components of the gate driver.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Maximum Supply Voltage: 14 V

With a high maximum supply voltage of 14 V, this gate driver can efficiently handle power requirements in various applications.

Screening Level: AEC-Q100

AEC-Q100 screening ensures high reliability and quality standards, making this gate driver suitable for automotive applications where performance and durability are critical.

Minimum Operating Temperature: -40 °C

The gate driver can operate effectively in extremely cold environments, making it suitable for a wide range of applications with varying temperature conditions.

Maximum Output Current: 1 A

The high maximum output current capacity of 1 A allows for driving power MOSFETs efficiently, enabling reliable and responsive performance.

No. of Channels: 2

Having two channels provides flexibility in controlling multiple MOSFETs, making this gate driver versatile for different circuit configurations.

Turn-on Time: 0.056 us

The fast turn-on time of 0.056 us ensures quick response and efficient switching of the MOSFETs, enhancing overall system performance.

Technical Specifications

MOSFET Gate Drivers LM5109BQNGTRQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Length:

4 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

1 A

Nominal Output Peak Current Limit:

1 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.16,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Screening Level:

AEC-Q100

Maximum Seated Height:

.8 mm

Maximum Supply Current:

2.9 mA

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

8 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.056 us

Turn-on Time:

.056 us

Width:

4 mm

Trade Compliance

LM5109BQNGTRQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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