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PUCC21530DWK

Texas Instruments

PUCC21530DWK by Texas Instruments

The Texas Instruments PUCC21530DWK is a MOSFET gate driver with 2 channels, 6A max output current, and built-in transient and undervoltage protections. Ideal for automotive applications, it operates b/w -40 to 125°C with a supply voltage range of 3V to 18V. With a compact rectangular package style and small outline design, it offers fast turn-on/off times of 0.03us for efficient high side driving.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,366 parts In-Stock

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3,366

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Digiode

USA . 3,052 parts In-Stock

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3,052

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Parana Technologies

USA . 1,129 parts In-Stock

1+ parts

$5.042

100+ parts

-

1k+ parts

$5.602

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1,129

$5.042

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$5.602

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ChromeModa Solutions

Germany . 3,028 parts In-Stock

1+ parts

$5.665

100+ parts

$4.645

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$5.665

$4.645

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IDEA Electronic Components Group

UK . 1,174 parts In-Stock

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$5.665

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$5.098

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1,174

$5.665

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$5.098

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AZTECH Wire

Italy . 893 parts In-Stock

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$9.414

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893

$9.414

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$11.102

100+ parts

$10.547

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$10.547

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40

$11.102

$10.547

$10.547

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One Stop Electronics

USA . 1,278 parts In-Stock

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$12.500

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$12.500

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Corohmni

South Africa . 642 parts In-Stock

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$13.314

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642

$13.314

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Semicontronic

India . 1,270 parts In-Stock

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$32.500

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$31.688

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$31.525

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1,270

$32.500

$31.688

$31.525

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Ampacity Inc.

Singapore . 168 parts In-Stock

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$50.500

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168

$50.500

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Continental Prestige Electronics

USA . 3,456 parts In-Stock

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Corphita

USA . 3,066 parts In-Stock

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DigiPath Technology Company

USA . 1,048 parts In-Stock

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$5.108

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$5.108

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Argo Parts USA

USA . 466 parts In-Stock

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466

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Robosynatics

Brazil . 350 parts In-Stock

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350

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Lucentia Tech

USA . 350 parts In-Stock

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350

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Bastille Electronics

Australia . 26 parts In-Stock

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Overview

Experience the unparalleled quality and precision of Texas Instruments with the PUCC21530DWK MOSFET Gate Driver. This advanced component offers built-in protections, high side drivers, and a wide temperature range, making it ideal for automotive applications and beyond. With its small outline package and dual terminal position, this driver provides maximum output current of 6A with a nominal supply voltage of 3.3V. Trust in Texas Instruments for top-of-the-line technology that delivers exceptional performance and reliability. Elevate your projects with the PUCC21530DWK today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Maximum Supply Voltage: 18 V

Suitable for a wide range of applications without the risk of damaging the driver.

Built-in Protections: TRANSIENT; UNDER VOLTAGE

Enhances reliability and safety of the connected components by preventing damage from transient events and under voltage conditions.

Maximum Operating Temperature: 125 °C

Ensures reliable operation even in high temperature environments, making it suitable for automotive applications.

Minimum Operating Temperature: -40 °C

Can withstand extremely cold temperatures, increasing its versatility for various environmental conditions.

Width: 7.5 mm

Compact size allows for space-saving installation in tight layouts or designs.

No. of Channels: 2

Allows for controlling multiple MOSFETs simultaneously, increasing efficiency and flexibility in circuit design.

Maximum Output Current: 6 A

Delivers sufficient power for driving MOSFETs in a variety of applications.

Turn-on Time: 0.03 us

Provides fast switching speeds, improving the overall performance of the MOSFETs.

Technical Specifications

MOSFET Gate Drivers PUCC21530DWK attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Built-in Protections:

TRANSIENT; UNDER VOLTAGE

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G14

Length:

10.3 mm

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE AND SINK

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage:

18 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage-1:

25 V

Minimum Supply Voltage-1:

14.7 V

Nominal Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Turn-off Time:

.03 us

Turn-on Time:

.03 us

Width:

7.5 mm

Trade Compliance

PUCC21530DWK Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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