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PUCC27284DRCT

Texas Instruments

PUCC27284DRCT by Texas Instruments

PUCC27284DRCT by Texas Instruments is a MOSFET gate driver with 2 channels, capable of a max output current of 3.5A. It operates in automotive-grade temperatures (-40 to 125°C) and has a turn-on/off time of 30µs. This chip carrier package with very thin profile is suitable for high side driver applications requiring a supply voltage range of 5.5V to 16V.

Median Price

$0.481

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 59 parts In-Stock

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$0.481

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Digiode

USA . 650 parts In-Stock

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650

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Vyrian

USA . 507 parts In-Stock

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507

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Distributors (Availability)

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Continental Prestige Electronics

USA . 2,114 parts In-Stock

1+ parts

$0.481

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$0.471

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$0.471

Netroflash

USA . 2,000 parts In-Stock

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$0.481

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$0.481

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Argo Parts USA

USA . 149 parts In-Stock

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$0.481

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$0.467

149

$0.481

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$0.467

Corohmni

South Africa . 89 parts In-Stock

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$2.973

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89

$2.973

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Parana Technologies

USA . 1,221 parts In-Stock

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$3.623

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$4.136

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$3.623

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$4.136

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DigiPath Technology Company

USA . 2,263 parts In-Stock

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$3.990

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$3.670

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$3.990

$3.670

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ChromeModa Solutions

Germany . 3,338 parts In-Stock

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$4.071

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$3.338

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IDEA Electronic Components Group

UK . 1,078 parts In-Stock

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$4.071

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$3.664

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AZTECH Wire

Italy . 640 parts In-Stock

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$16.181

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One Stop Electronics

USA . 1,447 parts In-Stock

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$16.500

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Ampacity Inc.

Singapore . 463 parts In-Stock

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$19.500

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463

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Semicontronic

India . 1,125 parts In-Stock

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$31.500

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$30.712

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$30.555

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$31.500

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Corphita

USA . 662 parts In-Stock

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Overview

Experience superior performance and reliability with the Texas Instruments PUCC27284DRCT MOSFET Gate Driver. Manufactured by a trusted industry leader, this chip carrier package offers automotive-grade quality and exceptional thermal management capabilities. Ideal for high-side driver applications, this gate driver provides a seamless interface for half-bridge based MOSFET drivers, ensuring fast turn-on and turn-off times for optimal efficiency. Upgrade your electronic systems with the PUCC27284DRCT and enjoy the benefits of precise control, minimal power consumption, and extended component lifespan.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability to the product, ensuring long-term usage.

Surface Mount: YES

Enables easy and efficient installation onto circuit boards without the need for additional mounting hardware.

Maximum Supply Voltage: 16 V

Can handle high voltage requirements, making it versatile for a variety of applications.

Minimum Supply Voltage: 5.5 V

Has a low minimum supply voltage, allowing for flexibility in power supply options.

Maximum Operating Temperature: 125 °C

Can operate efficiently even in high temperature environments, suitable for automotive and industrial applications.

Minimum Operating Temperature: -40 °C

Capable of functioning in extremely cold conditions, ensuring reliability in various climates.

No. of Channels: 2

Provides multiple channels for driving MOSFETs, increasing versatility in circuit design.

Nominal Supply Voltage: 12 V

Standard voltage supply requirement, easily compatible with common power sources.

Nominal Output Peak Current Limit: 3.5 A

Can deliver high current output, suitable for driving power MOSFETs in demanding applications.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Offers a specialized interface for driving MOSFETs in half-bridge configuration, optimizing performance.

Technical Specifications

MOSFET Gate Drivers PUCC27284DRCT attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PDSO-N10

Length:

3 mm

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

3.5 A

Nominal Output Peak Current Limit:

3.5 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC10,.12,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Maximum Seated Height:

1 mm

Maximum Supply Current:

4.5 mA

Maximum Supply Voltage:

16 V

Minimum Supply Voltage:

5.5 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Turn-off Time:

30 us

Turn-on Time:

30 us

Width:

3 mm

Trade Compliance

PUCC27284DRCT Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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