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PUCC5350MCQDWVQ1

Texas Instruments

PUCC5350MCQDWVQ1 by Texas Instruments

PUCC5350MCQDWVQ1 by Texas Instruments is a MOSFET Gate Driver with 15V max supply voltage, AEC-Q100 screening level, and 10A max output current. Ideal for automotive applications due to its small outline package style, true and inverted output polarity, and fast turn-on/off times of 0.1 us.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 9,006 parts In-Stock

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Digiode

USA . 4,810 parts In-Stock

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Bristol Electronics

USA . 460 parts In-Stock

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460

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Dan-Mar Components

USA . 460 parts In-Stock

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460

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Nova Conductors

Japan . 78 parts In-Stock

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78

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Parana Technologies

USA . 719 parts In-Stock

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$2.780

100+ parts

$258.199

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$2.502

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719

$2.780

$258.199

$2.502

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DigiPath Technology Company

USA . 1,256 parts In-Stock

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$3.062

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Corohmni

South Africa . 457 parts In-Stock

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$3.077

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ChromeModa Solutions

Germany . 5,052 parts In-Stock

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$3.124

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$2.562

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IDEA Electronic Components Group

UK . 753 parts In-Stock

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$3.124

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$2.812

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$2.812

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AZTECH Wire

Italy . 188 parts In-Stock

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$5.815

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One Stop Electronics

USA . 1,518 parts In-Stock

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$13.500

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Ampacity Inc.

Singapore . 631 parts In-Stock

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$46.500

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Semicontronic

India . 612 parts In-Stock

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$50.500

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$49.238

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$48.985

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$48.985

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Corphita

USA . 4,571 parts In-Stock

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Argo Parts USA

USA . 2,961 parts In-Stock

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Continental Prestige Electronics

USA . 2,952 parts In-Stock

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Advanced Electronics

New Zealand . 870 parts In-Stock

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Revolutionize your automotive electronics with the Texas Instruments PUCC5350MCQDWVQ1 MOSFET Gate Driver. Crafted with precision by a trusted industry leader, this driver offers unparalleled quality and reliability. From true and inverted output polarity to a compact design, this driver is perfect for a wide range of applications. Experience the value of enhanced performance and efficiency with the PUCC5350MCQDWVQ1, delivering exceptional benefits and advantages to customers seeking top-of-the-line technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the MOSFET gate driver, making it suitable for various industrial applications.

Surface Mount: YES

Being surface mountable makes installation easier and more convenient, allowing for efficient PCB assembly.

Maximum Supply Voltage: 15 V

The 15V maximum supply voltage capability ensures compatibility with a wide range of power sources, adding versatility to the gate driver.

Screening Level: AEC-Q100

AEC-Q100 screening ensures high reliability and quality standards, making this gate driver suitable for automotive applications where durability is crucial.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this gate driver can withstand harsh environmental conditions and operate reliably in demanding scenarios.

Nominal Output Peak Current Limit: 10 A

The 10A output peak current limit allows for driving high-power MOSFETs, making this gate driver capable of handling heavy loads efficiently.

Interface IC Type: BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER

The interface IC type of buffer or inverter based IGBT/MOSFET driver indicates compatibility with a wide range of devices, offering flexibility in system integration.

Technical Specifications

MOSFET Gate Drivers PUCC5350MCQDWVQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Input Characteristics:

STANDARD

JESD-30 Code:

R-PDSO-G8

Length:

7.5 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

10 A

Nominal Output Peak Current Limit:

10 A

Output Polarity:

TRUE AND INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.45

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Screening Level:

AEC-Q100

Maximum Seated Height:

2.8 mm

Maximum Supply Current:

2.4 mA

Maximum Supply Voltage:

15 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage-1:

33 V

Minimum Supply Voltage-1:

13.2 V

Nominal Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Turn-off Time:

.1 us

Turn-on Time:

.1 us

Width:

5.85 mm

Trade Compliance

PUCC5350MCQDWVQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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