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LM5101ASDX-1/NOPB

Texas Instruments

LM5101ASDX-1/NOPB by Texas Instruments

LM5101ASDX-1/NOPB by Texas Instruments is a MOSFET gate driver with 2 channels, 3A max output current, and 12V nominal voltage. It operates in automotive-grade temperatures (-40 to 125°C) and has a turn-on/off time of 0.056us. Ideal for high side driving applications requiring fast switching speeds.

Median Price

$2.666

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 1,308 parts In-Stock

1+ parts

$2.666

100+ parts

$2.336

1k+ parts

$1.320

10k+ parts

-

1,308

$2.666

$2.336

$1.320

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 53 parts In-Stock

1+ parts

$1.320

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-

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53

$1.320

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Digiode

USA . 3,371 parts In-Stock

1+ parts

$2.533

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3,371

$2.533

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Chip Stock

USA . 7,910 parts In-Stock

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7,910

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Anansix

USA . 2,417 parts In-Stock

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2,417

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Vyrian

USA . 1,033 parts In-Stock

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1,033

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Distributors (Availability)

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Argo Parts USA

USA . 4,747 parts In-Stock

1+ parts

$1.320

100+ parts

-

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4,747

$1.320

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Continental Prestige Electronics

USA . 1,332 parts In-Stock

1+ parts

$1.320

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$1.294

1,332

$1.320

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-

$1.294

Netroflash

USA . 100 parts In-Stock

1+ parts

$1.320

100+ parts

$1.294

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100

$1.320

$1.294

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Semicontronic

India . 1,266 parts In-Stock

1+ parts

$2.270

100+ parts

$2.213

1k+ parts

$2.202

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1,266

$2.270

$2.213

$2.202

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Ampacity Inc.

Singapore . 1,129 parts In-Stock

1+ parts

$2.270

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1,129

$2.270

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Corphita

USA . 798 parts In-Stock

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$2.399

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798

$2.399

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Corohmni

South Africa . 338 parts In-Stock

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$6.569

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338

$6.569

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Parana Technologies

USA . 1,203 parts In-Stock

1+ parts

$6.691

100+ parts

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$7.387

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1,203

$6.691

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$7.387

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DigiPath Technology Company

USA . 206 parts In-Stock

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$7.368

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206

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ChromeModa Solutions

Germany . 1,520 parts In-Stock

1+ parts

$7.518

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$6.165

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1,520

$7.518

$6.165

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IDEA Electronic Components Group

UK . 990 parts In-Stock

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$7.518

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$6.766

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990

$7.518

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$6.766

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Microchip USA

USA . 2,624 parts In-Stock

1+ parts

$14.350

100+ parts

$14.150

1k+ parts

$14.040

10k+ parts

$13.940

2,624

$14.350

$14.150

$14.040

$13.940

Component Stockers USA

USA . 35,745 parts In-Stock

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$1.630

10k+ parts

$1.630

35,745

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$1.630

$1.630

Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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6,000

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QUARKTWIN TECHNOLOGY LTD

USA . 4,801 parts In-Stock

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4,801

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Lixinc

USA . 637 parts In-Stock

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637

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Overview

Enhance the performance of your applications with the LM5101ASDX-1/NOPB MOSFET Gate Driver from Texas Instruments. This high-quality product offers reliability and efficiency, making it a top choice for a wide range of electronic devices. With its small outline package and automotive-grade temperature tolerance, this driver is perfect for demanding environments. Experience seamless operation and increased functionality with the LM5101ASDX-1/NOPB – a must-have solution for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this MOSFET gate driver lightweight and durable, suitable for various applications.

Surface Mount: YES

The surface mount capability of this product allows for easy and efficient assembly onto circuit boards, saving time and effort in installation.

Maximum Supply Voltage: 14 V

With a high maximum supply voltage of 14V, this MOSFET gate driver can handle a wide range of power supply levels, making it versatile for different systems.

Package Shape: SQUARE

The square package shape provides a compact design, saving space on the PCB and allowing for more efficient circuit layouts.

Power Supplies (V): 12

Operating at a nominal supply voltage of 12V, this MOSFET gate driver is compatible with standard power sources, making it easy to integrate into existing systems.

No. of Terminals: 8

The eight terminals offer a flexible connection interface, allowing for easy integration with other components in the circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style with a heat sink/slug and very thin profile design makes this MOSFET gate driver ideal for applications where space is limited.

Minimum Supply Voltage: 9 V

With a low minimum supply voltage of 9V, this MOSFET gate driver is energy-efficient and can operate at lower power levels, saving energy and reducing costs.

Maximum Operating Temperature: 125 °C

Operating at a high maximum temperature of 125°C, this MOSFET gate driver can withstand extreme environments, ensuring reliability and longevity.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C allows this MOSFET gate driver to perform in cold conditions, making it suitable for a wide range of applications.

Technical Specifications

MOSFET Gate Drivers LM5101ASDX-1/NOPB attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e3

Length:

4 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

3 A

Nominal Output Peak Current Limit:

3 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.16,32

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Current:

3 mA

Maximum Supply Voltage:

14 V

Minimum Supply Voltage:

9 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.056 us

Turn-on Time:

.056 us

Width:

4 mm

Trade Compliance

LM5101ASDX-1/NOPB Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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