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PDRV8106HQRHBQ1

Texas Instruments

PDRV8106HQRHBQ1 by Texas Instruments

PDRV8106HQRHBQ1 by Texas Instruments is a MOSFET gate driver with 32 terminals, suitable for automotive applications. It operates b/w -40 to 125°C, with a supply voltage range of 3-37V. Featuring push-pull output and half bridge interface IC type, it offers fast turn-on/off times of 0.85/0.6 us.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,759 parts In-Stock

1+ parts

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5,759

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Digiode

USA . 1,017 parts In-Stock

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1,017

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,134 parts In-Stock

1+ parts

$4.500

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1,134

$4.500

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Parana Technologies

USA . 1,301 parts In-Stock

1+ parts

$7.707

100+ parts

$715.666

1k+ parts

$6.936

10k+ parts

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1,301

$7.707

$715.666

$6.936

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DigiPath Technology Company

USA . 791 parts In-Stock

1+ parts

$8.486

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791

$8.486

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ChromeModa Solutions

Germany . 2,296 parts In-Stock

1+ parts

$8.659

100+ parts

$7.100

1k+ parts

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2,296

$8.659

$7.100

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IDEA Electronic Components Group

UK . 2,264 parts In-Stock

1+ parts

$8.659

100+ parts

$8.226

1k+ parts

$7.793

10k+ parts

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2,264

$8.659

$8.226

$7.793

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AZTECH Wire

Italy . 662 parts In-Stock

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$11.332

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662

$11.332

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Corphita

USA . 4,795 parts In-Stock

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4,795

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Overview

Experience superior quality and reliability with the Texas Instruments PDRV8106HQRHBQ1 MOSFET Gate Driver. Designed for automotive applications, this high-performance driver offers efficient push-pull output characteristics and a wide temperature range from -40°C to 125°C. With a maximum supply voltage of 37V and AEC-Q100 screening level, this driver ensures optimal performance and durability in demanding environments. Trust in Texas Instruments' renowned expertise in semiconductor manufacturing to deliver exceptional value and benefits to your projects. Drive innovation with the PDRV8106HQRHBQ1 and elevate your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the gate driver.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration onto PCBs, saving space and reducing assembly time.

Maximum Supply Voltage: 5.5 V

Ability to handle a maximum supply voltage of 5.5V makes it suitable for a wide range of applications where lower voltage operation is required.

Screening Level: AEC-Q100

AEC-Q100 screening level ensures high quality and reliability, making it suitable for automotive applications where durability is important.

Package Shape: SQUARE

Square package shape allows for easy placement and mounting on PCBs, optimizing space utilization and layout design.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this gate driver can withstand high temperature environments, making it suitable for automotive and industrial applications.

Output Characteristics: PUSH-PULL

Push-pull output characteristics provide efficient and reliable performance in driving MOSFETs, ensuring optimal switching and control.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this gate driver can operate in harsh cold environments, providing versatility in application use.

High Side Driver: YES

High-side driver capability allows for driving the top-side switch of a half-bridge configuration, enhancing efficiency in power conversion applications.

Technical Specifications

MOSFET Gate Drivers PDRV8106HQRHBQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PQCC-N32

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Nominal Output Peak Current Limit:

.062 A

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Screening Level:

AEC-Q100

Maximum Supply Current:

5.5 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

37 V

Minimum Supply Voltage-1:

4.9 V

Nominal Supply Voltage-1:

13.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Position:

QUAD

Turn-off Time:

.6 us

Turn-on Time:

.85 us

Trade Compliance

PDRV8106HQRHBQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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