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PDRV8714SRHAQ1

Texas Instruments

PDRV8714SRHAQ1 by Texas Instruments

PDRV8714SRHAQ1 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 37V and operating temperature range of -40 to 125°C. It features push-pull output polarity and is designed for automotive applications, offering a turn-on/off time of 0.6us. The package style includes chip carrier, heat sink/slug, and very thin profile, making it suitable for compact designs in automotive electronics.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,310 parts In-Stock

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Digiode

USA . 4,797 parts In-Stock

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Nova Conductors

Japan . 53 parts In-Stock

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Parana Technologies

USA . 593 parts In-Stock

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$8.776

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$9.462

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Corohmni

South Africa . 13 parts In-Stock

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$9.152

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DigiPath Technology Company

USA . 1,471 parts In-Stock

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$9.664

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$9.664

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ChromeModa Solutions

Germany . 2,342 parts In-Stock

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$9.861

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$8.086

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IDEA Electronic Components Group

UK . 1,078 parts In-Stock

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$9.861

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$9.368

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$8.875

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AZTECH Wire

Italy . 268 parts In-Stock

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$10.698

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One Stop Electronics

USA . 793 parts In-Stock

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$23.500

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Ampacity Inc.

Singapore . 532 parts In-Stock

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$49.500

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Continental Prestige Electronics

USA . 3,374 parts In-Stock

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Aranea Global

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Argo Parts USA

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Corphita

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Overview

Experience the superior quality and reliability of Texas Instruments with the PDRV8714SRHAQ1 MOSFET Gate Driver. Designed for automotive applications, this chip carrier features a very thin profile and heat sink, making it perfect for tight spaces. With a wide operating temperature range and high side driver capability, this product offers exceptional performance. Trust in Texas Instruments for top-notch engineering and innovative solutions that deliver value and peace of mind to our customers. Elevate your projects with the PDRV8714SRHAQ1 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for automotive applications.

Maximum Supply Voltage: 37 V

Allows for a wide range of voltage inputs, providing flexibility in various circuit designs.

Screening Level: AEC-Q100

Meets automotive industry standards for reliability and quality assurance.

Output Characteristics: PUSH-PULL

Ensures efficient and fast switching between on and off states, improving overall performance.

Nominal Supply Voltage: 13.5 V

Optimal voltage level for steady and reliable operation in automotive environments.

Turn-on Time: 0.6 us

Quick turn-on time improves responsiveness and efficiency of the driver.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Offers a well-established and commonly used interface design for easy integration.

Technical Specifications

MOSFET Gate Drivers PDRV8714SRHAQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

S-PQCC-N40

Length:

6 mm

No. of Functions:

1

No. of Terminals:

40

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Nominal Output Peak Current Limit:

.078 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC40,.24SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Supply Voltage:

37 V

Minimum Supply Voltage:

4.9 V

Nominal Supply Voltage:

13.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Turn-off Time:

.6 us

Turn-on Time:

.6 us

Width:

6 mm

Trade Compliance

PDRV8714SRHAQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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