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PDRV8714SRVJQ1

Texas Instruments

PDRV8714SRVJQ1 by Texas Instruments

PDRV8714SRVJQ1 by Texas Instruments is a MOSFET gate driver with 56 terminals, suitable for automotive applications. It operates b/w -40 to 125°C, with a supply voltage range of 4.9-37V. Featuring push-pull output and half bridge interface IC type, it offers fast turn-on/off times of 0.6 us.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,009 parts In-Stock

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Digiode

USA . 1,886 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Parana Technologies

USA . 2,313 parts In-Stock

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$4.731

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$5.228

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$4.731

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$5.228

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DigiPath Technology Company

USA . 1,626 parts In-Stock

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$5.210

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ChromeModa Solutions

Germany . 5,909 parts In-Stock

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$5.316

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$4.359

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$5.316

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IDEA Electronic Components Group

UK . 987 parts In-Stock

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$5.316

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$4.784

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987

$5.316

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$4.784

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Corohmni

South Africa . 51 parts In-Stock

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$9.797

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51

$9.797

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AZTECH Wire

Italy . 459 parts In-Stock

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$12.254

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One Stop Electronics

USA . 220 parts In-Stock

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$12.500

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$12.500

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Ampacity Inc.

Singapore . 363 parts In-Stock

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$14.500

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Argo Parts USA

USA . 4,521 parts In-Stock

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Continental Prestige Electronics

USA . 3,318 parts In-Stock

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Corphita

USA . 3,059 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Overview

Enhance the performance of your automotive applications with the PDRV8714SRVJQ1 by Texas Instruments. This high-quality MOSFET gate driver offers superior reliability and efficiency, thanks to its advanced design and AEC-Q100 screening level. With a wide operating temperature range and fast turn-on/off times, this chip carrier package delivers true output polarity and push-pull characteristics for optimal performance. Trust Texas Instruments for cutting-edge technology that meets the demands of the automotive industry, providing value and benefits to customers seeking top-tier components for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly onto PCBs, making it ideal for high-volume production.

Maximum Supply Voltage: 37 V

The high maximum supply voltage allows for compatibility with a wide range of applications, providing flexibility and versatility.

High Side Driver: YES

Having a high side driver capability enables control of power switches on the high side of the load, offering more options for circuit design and application flexibility.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliability and performance even in harsh environmental conditions, making it suitable for automotive applications.

Technical Specifications

MOSFET Gate Drivers PDRV8714SRVJQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

S-PQCC-N56

Length:

8 mm

No. of Functions:

1

No. of Terminals:

56

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Nominal Output Peak Current Limit:

.078 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC56,.31SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Supply Voltage:

37 V

Minimum Supply Voltage:

4.9 V

Nominal Supply Voltage:

13.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Turn-off Time:

.6 us

Turn-on Time:

.6 us

Width:

8 mm

Trade Compliance

PDRV8714SRVJQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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