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PDRV8706SRHBQ1

Texas Instruments

PDRV8706SRHBQ1 by Texas Instruments

PDRV8706SRHBQ1 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 37V and operating temperature range of -40 to 125°C. It features push-pull output characteristics, complementary polarity, and a turn-on time of 0.85µs. Ideal for automotive applications requiring high side drivers in a compact chip carrier package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,871 parts In-Stock

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Digiode

USA . 1,581 parts In-Stock

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Nova Conductors

Japan . 72 parts In-Stock

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72

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Corohmni

South Africa . 454 parts In-Stock

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$5.071

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454

$5.071

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AZTECH Wire

Italy . 266 parts In-Stock

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$7.576

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$7.576

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Parana Technologies

USA . 1,900 parts In-Stock

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$9.566

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$10.163

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$9.566

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DigiPath Technology Company

USA . 285 parts In-Stock

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$10.533

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$9.690

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285

$10.533

$9.690

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ChromeModa Solutions

Germany . 996 parts In-Stock

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$10.748

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$8.813

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996

$10.748

$8.813

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IDEA Electronic Components Group

UK . 375 parts In-Stock

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$10.748

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$10.211

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$9.673

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375

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Ampacity Inc.

Singapore . 1,450 parts In-Stock

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$36.500

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$36.500

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Semicontronic

India . 475 parts In-Stock

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$41.500

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$40.462

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$40.255

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One Stop Electronics

USA . 1,165 parts In-Stock

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$43.500

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Continental Prestige Electronics

USA . 4,643 parts In-Stock

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Argo Parts USA

USA . 2,298 parts In-Stock

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Corphita

USA . 2,173 parts In-Stock

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Modulus Dynamics

Lithuania . 500 parts In-Stock

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500

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Bastille Electronics

Australia . 40 parts In-Stock

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Advanced Electronics

New Zealand . 28 parts In-Stock

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Overview

Looking for a reliable MOSFET Gate Driver that delivers top-notch performance and quality? Look no further than the PDRV8706SRHBQ1 by Texas Instruments. With a maximum supply voltage of 37V and an operating temperature range from -40 to 125°C, this automotive-grade driver offers unmatched durability and efficiency. Whether you're working on automotive applications or industrial projects, this chip carrier package with heat sink/slug is sure to meet your needs. Trust Texas Instruments for excellence in semiconductor manufacturing and elevate your designs with the PDRV8706SRHBQ1.

Feature Benefit Bullets

Package Body Material: PLASTIC

Plastic packaging is lightweight and cost-effective, making the product easier to handle and transport.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto circuit boards, saving time and reducing production costs.

Maximum Supply Voltage: 5.5 V

Operates efficiently within standard voltage ranges, ensuring compatibility with a wide range of applications.

Screening Level: AEC-Q100

Adheres to automotive industry quality standards, ensuring reliability and durability in automotive applications.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures without performance degradation, making it suitable for automotive and industrial environments.

High Side Driver: YES

Includes a high side driver functionality, allowing for efficient control of power MOSFETs in high-side switching applications.

Technical Specifications

MOSFET Gate Drivers PDRV8706SRHBQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

S-PQCC-N32

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Nominal Output Peak Current Limit:

.062 A

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC

Package Code:

Package Equivalence Code:

LCC32,.2SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Screening Level:

AEC-Q100

Maximum Supply Current:

5.5 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

37 V

Minimum Supply Voltage-1:

4.9 V

Nominal Supply Voltage-1:

13.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Position:

QUAD

Turn-off Time:

.6 us

Turn-on Time:

.85 us

Trade Compliance

PDRV8706SRHBQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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