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PDRV8353HRTA

Texas Instruments

PDRV8353HRTA by Texas Instruments

PDRV8353HRTA by Texas Instruments is a MOSFET gate driver with a max supply voltage of 95V, suitable for automotive applications. It features a nominal output peak current limit of 0.51A and operates in temperatures ranging from -40°C to 125°C. With a compact chip carrier package style, it offers high side driver functionality and is designed for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,039 parts In-Stock

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Digiode

USA . 2,065 parts In-Stock

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Nova Conductors

Japan . 55 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 575 parts In-Stock

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$6.052

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Corohmni

South Africa . 50 parts In-Stock

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$8.949

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50

$8.949

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Parana Technologies

USA . 1,202 parts In-Stock

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$9.198

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$854.188

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$8.278

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$9.198

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DigiPath Technology Company

USA . 1,346 parts In-Stock

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$10.128

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$10.128

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ChromeModa Solutions

Germany . 220 parts In-Stock

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$10.335

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$8.475

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$10.335

$8.475

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IDEA Electronic Components Group

UK . 51 parts In-Stock

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$10.335

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$9.818

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$9.302

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51

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Ampacity Inc.

Singapore . 431 parts In-Stock

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$26.500

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$26.500

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One Stop Electronics

USA . 1,061 parts In-Stock

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$49.500

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Argo Parts USA

USA . 3,453 parts In-Stock

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Continental Prestige Electronics

USA . 2,661 parts In-Stock

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Corphita

USA . 1,860 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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Overview

Enhance your automotive electronics with the Texas Instruments PDRV8353HRTA MOSFET Gate Driver. With a high-quality design and reliable performance, this product is a game-changer in the industry. From its innovative package body material to its surface mount capabilities, this driver offers unparalleled advantages for various applications. Trust in Texas Instruments' reputation for excellence and choose the PDRV8353HRTA for superior value, benefits, and advantages that will exceed your expectations. Drive towards success with this cutting-edge solution today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the internal components, ensuring a long lifespan for the gate driver.

Surface Mount: YES

Being surface mountable makes installation easier and more convenient, especially in compact electronic designs where space is limited.

Maximum Supply Voltage: 95 V

The high maximum supply voltage allows for compatibility with a wide range of applications requiring different voltage levels.

Package Shape: SQUARE

The square shape of the package provides uniform distribution of components and efficient use of space in electronic circuits.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this gate driver can withstand demanding conditions and high temperature environments without compromising performance.

Nominal Supply Voltage: 48 V

The nominal supply voltage of 48 V is common in many electronic systems, making this gate driver suitable for a wide range of applications.

Temperature Grade: AUTOMOTIVE

Designed for automotive use, this gate driver meets the stringent requirements for reliability and performance in automotive applications.

Technical Specifications

MOSFET Gate Drivers PDRV8353HRTA attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PQCC-N40

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

40

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

.51 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.8 mm

Maximum Supply Voltage:

95 V

Minimum Supply Voltage:

6 V

Nominal Supply Voltage:

48 V

Maximum Supply Voltage-1:

75 V

Minimum Supply Voltage-1:

9 V

Nominal Supply Voltage-1:

10 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Trade Compliance

PDRV8353HRTA Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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