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PDRV8350HRTV

Texas Instruments

PDRV8350HRTV by Texas Instruments

PDRV8350HRTV by Texas Instruments is a MOSFET gate driver with a max supply voltage of 95V and operating temperature range of -40 to 125°C. It features a high side driver, interface IC type as half bridge based, and is designed for automotive applications requiring a nominal output peak current limit of 0.51A.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 7,117 parts In-Stock

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Digiode

USA . 2,553 parts In-Stock

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Nova Conductors

Japan . 63 parts In-Stock

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Corohmni

South Africa . 67 parts In-Stock

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$9.659

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Parana Technologies

USA . 2,302 parts In-Stock

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$11.115

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$11.570

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DigiPath Technology Company

USA . 2,071 parts In-Stock

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$12.239

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ChromeModa Solutions

Germany . 2,778 parts In-Stock

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$12.489

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$10.241

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IDEA Electronic Components Group

UK . 690 parts In-Stock

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$12.489

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$11.865

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$11.240

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690

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AZTECH Wire

Italy . 321 parts In-Stock

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$14.882

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Ampacity Inc.

Singapore . 484 parts In-Stock

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$16.500

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One Stop Electronics

USA . 596 parts In-Stock

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Corphita

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Argo Parts USA

USA . 2,506 parts In-Stock

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Continental Prestige Electronics

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Aranea Global

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Overview

Looking for a reliable MOSFET gate driver that offers high-quality performance and innovative features? Look no further than the PDRV8350HRTV by Texas Instruments. With a reputation for excellence in manufacturing, TI delivers exceptional products like this one that are perfect for a variety of applications. From automotive to industrial use, this chip carrier with a heat sink/slug and very thin profile package style offers customers the value, benefits, and advantages they need. Trust Texas Instruments to provide cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the driver, making it suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy integration into electronic circuits and saves space on the PCB.

Maximum Supply Voltage: 95 V

High maximum supply voltage ensures compatibility with a wide range of power supply systems.

Minimum Supply Voltage: 6 V

Low minimum supply voltage allows for operation in low power environments.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable performance even in extreme temperature conditions.

Minimum Operating Temperature: -40 °C

Wide range of minimum operating temperature allows for use in both high and low-temperature environments.

Technical Specifications

MOSFET Gate Drivers PDRV8350HRTV attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PQCC-N32

JESD-609 Code:

e4

Length:

6 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

.51 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.8 mm

Maximum Supply Voltage:

95 V

Minimum Supply Voltage:

6 V

Nominal Supply Voltage:

48 V

Maximum Supply Voltage-1:

75 V

Minimum Supply Voltage-1:

9 V

Nominal Supply Voltage-1:

10 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

PDRV8350HRTV Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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