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UCC21222DR

Texas Instruments

UCC21222DR by Texas Instruments

UCC21222DR by Texas Instruments is a MOSFET gate driver with 2 channels, 6A output current, and built-in transient & under voltage protections. It operates in automotive-grade temperatures (-40 to 125°C) and has a turn-on/off time of 0.04us. Ideal for driving IGBT/MOSFETs in automotive applications.

Median Price

$3.070

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 9,568 parts In-Stock

1+ parts

$2.020

100+ parts

$1.770

1k+ parts

$1.000

10k+ parts

-

9,568

$2.020

$1.770

$1.000

-

DigiKey

USA . 174 parts In-Stock

1+ parts

$3.070

100+ parts

$1.892

1k+ parts

$1.760

10k+ parts

-

174

$3.070

$1.892

$1.760

-

Mouser Electronics

USA . 52 parts In-Stock

1+ parts

$3.070

100+ parts

$1.900

1k+ parts

$1.680

10k+ parts

$1.590

52

$3.070

$1.900

$1.680

$1.590

Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$8.258

100+ parts

$7.845

1k+ parts

$7.845

10k+ parts

-

1,000

$8.258

$7.845

$7.845

-

Arrow

USA . 12,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$1.161

12,500

-

-

-

$1.161

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,450 parts In-Stock

1+ parts

$1.919

100+ parts

-

1k+ parts

-

10k+ parts

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2,450

$1.919

-

-

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$2.079

100+ parts

-

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-

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10

$2.079

-

-

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Chip Stock

USA . 6,070 parts In-Stock

1+ parts

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6,070

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ComSIT Distribution GmbH

Germany . 5,625 parts In-Stock

1+ parts

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5,625

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-

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ComSIT USA

USA . 5,625 parts In-Stock

1+ parts

-

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5,625

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Vyrian

USA . 5,554 parts In-Stock

1+ parts

-

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5,554

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LWI Electronics Inc

India . 5 parts In-Stock

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5

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 5,725 parts In-Stock

1+ parts

$0.990

100+ parts

$0.965

1k+ parts

$0.960

10k+ parts

-

5,725

$0.990

$0.965

$0.960

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Ampacity Inc.

Singapore . 5,537 parts In-Stock

1+ parts

$0.990

100+ parts

-

1k+ parts

-

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5,537

$0.990

-

-

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Corphita

USA . 3,860 parts In-Stock

1+ parts

$1.818

100+ parts

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3,860

$1.818

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Argo Parts USA

USA . 2,003 parts In-Stock

1+ parts

$2.079

100+ parts

-

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2,003

$2.079

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$2.079

100+ parts

-

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1,000

$2.079

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Continental Prestige Electronics

USA . 570 parts In-Stock

1+ parts

$2.079

100+ parts

-

1k+ parts

-

10k+ parts

$2.037

570

$2.079

-

-

$2.037

Corohmni

South Africa . 228 parts In-Stock

1+ parts

$4.591

100+ parts

-

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-

10k+ parts

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228

$4.591

-

-

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Parana Technologies

USA . 604 parts In-Stock

1+ parts

$7.751

100+ parts

$719.799

1k+ parts

$6.976

10k+ parts

-

604

$7.751

$719.799

$6.976

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$8.258

100+ parts

$7.845

1k+ parts

$7.845

10k+ parts

-

1,000

$8.258

$7.845

$7.845

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DigiPath Technology Company

USA . 2,156 parts In-Stock

1+ parts

$8.535

100+ parts

-

1k+ parts

-

10k+ parts

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2,156

$8.535

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ChromeModa Solutions

Germany . 255 parts In-Stock

1+ parts

$8.709

100+ parts

$7.141

1k+ parts

-

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255

$8.709

$7.141

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IDEA Electronic Components Group

UK . 145 parts In-Stock

1+ parts

$8.709

100+ parts

$8.274

1k+ parts

$7.838

10k+ parts

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145

$8.709

$8.274

$7.838

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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15,000

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Lixinc

USA . 14,536 parts In-Stock

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14,536

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Futuretech Components

Singapore . 2,500 parts In-Stock

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2,500

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iodParts Technologies Inc.

India . 200 parts In-Stock

1+ parts

-

100+ parts

$2.425

1k+ parts

-

10k+ parts

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200

-

$2.425

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-

Overview

Elevate your projects with the UCC21222DR by Texas Instruments, a top-of-the-line MOSFET Gate Driver that sets the standard for quality and reliability. With built-in protections for transient and under voltage events, this driver ensures optimal performance and longevity. Perfect for automotive applications, this compact driver offers a maximum output current of 6A and operates efficiently in extreme temperatures from -40°C to 125°C. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations. Experience the difference with the UCC21222DR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the gate driver.

Surface Mount: YES

Allows for easy and secure mounting on circuit boards, saving valuable space.

Maximum Supply Voltage: 5.5 V

Compatible with a wide range of power supplies, making it versatile for various applications.

Built-in Protections: TRANSIENT; UNDER VOLTAGE

Ensures the safety and longevity of connected devices by preventing damage from power fluctuations.

Maximum Output Current: 6 A

Capable of driving high power loads, making it suitable for demanding industrial applications.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, ensuring reliable performance in challenging environments.

Nominal Supply Voltage: 3.3 V

Efficiently operates at a low voltage, reducing power consumption and heat generation.

Interface IC Type: HALF BRIDGE BASED IGBT/MOSFET DRIVER

Specifically designed to drive IGBTs and MOSFETs, providing precise control over power circuits.

Technical Specifications

MOSFET Gate Drivers UCC21222DR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Built-in Protections:

TRANSIENT; UNDER VOLTAGE

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

9.9 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE AND SINK

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage-1:

18 V

Minimum Supply Voltage-1:

9.2 V

Nominal Supply Voltage-1:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.04 us

Turn-on Time:

.04 us

Width:

3.9 mm

Trade Compliance

UCC21222DR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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