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DRA783BRGABFQ1

Texas Instruments

DRA783BRGABFQ1 by Texas Instruments

The Texas Instruments DRA783BRGABFQ1 is a MICROPROCESSOR CIRCUIT with 367 terminals in a GRID ARRAY package. It operates at -40 to 125 °C, with a max clock frequency of 32 MHz. Ideal for automotive applications requiring CAN, I2C, SPI, and UART bus compatibility.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,693 parts In-Stock

1+ parts

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4,693

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Digiode

USA . 4,510 parts In-Stock

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4,510

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Distributors (Availability)

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Northwest PG Solutions

USA . 1,229 parts In-Stock

1+ parts

$3.060

100+ parts

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1,229

$3.060

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One Stop Electronics

USA . 1,043 parts In-Stock

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$5.000

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-

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1,043

$5.000

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AZTECH Wire

Italy . 204 parts In-Stock

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$8.476

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204

$8.476

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Corohmni

South Africa . 3,240 parts In-Stock

1+ parts

$49.475

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3,240

$49.475

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Parana Technologies

USA . 1,414 parts In-Stock

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$71.079

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1,414

$71.079

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DigiPath Technology Company

USA . 1,394 parts In-Stock

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$78.267

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1,394

$78.267

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IDEA Electronic Components Group

UK . 1,835 parts In-Stock

1+ parts

$79.864

100+ parts

$75.871

1k+ parts

$71.878

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1,835

$79.864

$75.871

$71.878

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ChromeModa Solutions

Germany . 1,332 parts In-Stock

1+ parts

$79.864

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$65.488

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1,332

$79.864

$65.488

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Microchip USA

USA . 3,394 parts In-Stock

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3,394

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Corphita

USA . 2,691 parts In-Stock

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2,691

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Native Components

USA . 748 parts In-Stock

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$2.699

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748

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$2.699

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Overview

Discover the cutting-edge DRA783BRGABFQ1 by Texas Instruments, a top-of-the-line product in the category of Other Function uPs,uCs & Peripheral ICs. With Texas Instruments' reputation for excellence in manufacturing, this MICROPROCESSOR CIRCUIT offers unrivaled quality and reliability. Ideal for automotive applications, this product boasts a wide range of features including CAN, I2C, SPI, and UART bus compatibility. Experience the value and benefits this innovative technology brings to your projects, with its high performance, compact design, and advanced CMOS technology. Elevate your work with the DRA783BRGABFQ1 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the internal components of the IC, ensuring reliable performance over time.

Surface Mount: YES

Being surface mountable allows for easier PCB assembly and saves space, making it suitable for compact electronic designs.

Maximum Supply Voltage: 1.11 V

The high maximum supply voltage allows for a wide range of compatible power sources, enhancing flexibility in application.

Screening Level: AEC-Q100

AEC-Q100 screening ensures the IC meets automotive industry standards for quality and reliability, making it suitable for automotive applications.

Package Shape: SQUARE

The square package shape is efficient for PCB layout and space-saving design, making it a practical choice for electronic projects with limited space.

No. of Terminals: 367

The high number of terminals allows for extensive connectivity options, making it suitable for complex circuit designs requiring numerous connections.

Package Style (Meter): GRID ARRAY

The grid array package style offers high density integration capabilities and efficient heat dissipation, making it suitable for high-performance applications.

Minimum Supply Voltage: 1.02 V

The low minimum supply voltage ensures energy-efficient operation and compatibility with a wide range of power sources.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the IC can withstand harsh environmental conditions and operate reliably in demanding applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for reliable performance even in extreme cold conditions, making it suitable for a variety of environments.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin silver copper ensures good conductivity and corrosion resistance, enhancing the longevity and reliability of the IC.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy soldering and connection to the PCB, simplifying the assembly process.

Maximum Seated Height: 2.82 mm

The low maximum seated height allows for a compact profile and integration into slim electronic devices, making it suitable for space-constrained designs.

Width: 15 mm

The width of 15mm offers a balanced form factor for easy integration into various electronic projects without compromising on space efficiency.

External Data Bus Width: 48

The wide external data bus width of 48 bits allows for high-speed data transfer and processing, making it ideal for applications requiring rapid data exchange.

Maximum Clock Frequency: 32 MHz

The high maximum clock frequency of 32 MHz enables fast processing speeds and real-time responsiveness, making it suitable for time-critical applications.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and reliability during the assembly process.

Peak Reflow Temperature °C: 250

With a peak reflow temperature of 250°C, the IC can withstand high-temperature soldering processes without compromising its functionality.

Length: 15 mm

The length of 15mm provides a compact size for easy integration into electronic designs without sacrificing performance or functionality.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade ensures the IC can operate effectively in automotive environments with varying temperature conditions, making it suitable for automotive applications.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

Being a microprocessor circuit, the IC offers advanced processing capabilities and flexibility for various applications, making it a versatile choice for electronics projects.

Technology: CMOS

The CMOS technology provides low power consumption and high-speed processing, making the IC energy-efficient and suitable for battery-powered devices.

Terminal Form: BALL

The ball terminal form ensures reliable connections and good thermal properties, enhancing the overall performance and reliability of the IC.

Nominal Supply Voltage: 1.06 V

The nominal supply voltage of 1.06V offers stable and consistent power delivery, ensuring reliable operation of the IC in various electronic systems.

Bus Compatibility: CAN; I2C; SPI; UART

The IC's compatibility with various bus protocols such as CAN, I2C, SPI, and UART allows for seamless integration into different communication systems, enhancing connectivity options for diverse applications.

Terminal Pitch: 0.65 mm

The small terminal pitch of 0.65mm enables high-density packaging and space-saving design, making it suitable for compact electronic devices and PCB layouts.

Moisture Sensitivity Level (MSL): 3

The MSL level of 3 indicates the IC's resistance to moisture-induced damage during storage and assembly, ensuring long-term reliability and performance in humid conditions.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DRA783BRGABFQ1 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bus Compatibility:

CAN; I2C; SPI; UART

Maximum Clock Frequency:

32 MHz

External Data Bus Width:

48

JESD-30 Code:

S-PBGA-B367

JESD-609 Code:

e1

Length:

15 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

367

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

250

Screening Level:

AEC-Q100

Maximum Seated Height:

2.82 mm

Maximum Supply Voltage:

1.11 V

Minimum Supply Voltage:

1.02 V

Nominal Supply Voltage:

1.06 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

15 mm

Peripheral IC Type:

Trade Compliance

DRA783BRGABFQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.1

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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