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M58LR128FT85ZB6T

STMicroelectronics

M58LR128FT85ZB6T by STMicroelectronics

M58LR128FT85ZB6T from STMicroelectronics is a 1.8V NOR Flash memory with a density of 134Mbit, featuring asynchronous operation and a max access time of 85ns. It operates in extreme temperatures (-40 °C to 85 °C) and supports parallel interface. Ideal for industrial applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,854 parts In-Stock

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Anansix

USA . 2,290 parts In-Stock

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2,290

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Digiode

USA . 255 parts In-Stock

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255

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,898 parts In-Stock

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$2.840

100+ parts

-

1k+ parts

$2.556

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1,898

$2.840

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$2.556

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MKK Technologies

India . 1,285 parts In-Stock

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$5.341

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1,285

$5.341

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DigiPath Technology Company

USA . 1,285 parts In-Stock

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$5.341

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1,285

$5.341

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Parana Technologies

USA . 1,960 parts In-Stock

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$3.396

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1,960

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$3.396

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Corphita

USA . 1,603 parts In-Stock

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Overview

Unlock exceptional performance with the M58LR128FT85ZB6T Flash Memory from STMicroelectronics, a trusted leader in semiconductor innovation. This compact and efficient memory solution excels in diverse applications, from automotive to industrial systems, ensuring reliability in extreme conditions. With its low power consumption and robust design, experience enhanced speed and efficiency that drive your projects forward while guaranteeing quality that stands the test of time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures reliability and protection against environmental factors, making the product suitable for various applications.

Surface Mount: YES

Surface mount technology allows for a compact design and easier integration into modern circuit boards.

Package Shape: RECTANGULAR

The rectangular shape provides efficient space utilization in electronic assemblies.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster data access and improves performance in applications demanding quick data retrieval.

Nominal Supply Voltage / Vsup: 1.8 V

A low operating voltage of 1.8 V contributes to lower power consumption, enhancing energy efficiency in battery-powered devices.

Power Supplies (V): 1.8

Consistent supply voltage ensures stable operation and high reliability across various applications.

No. of Terminals: 56

A higher number of terminals allows for extensive connectivity options and greater functional integration.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The fine pitch and thin profile facilitate efficient space-saving designs in compact electronic products.

Maximum Operating Temperature: 85 °C

High thermal tolerance makes this product suitable for industrial applications with demanding operating conditions.

Organization: 8MX16

This organization type optimizes data access patterns, enhancing overall memory efficiency.

Minimum Operating Temperature: -40 °C

The wide temperature range supports operation in extreme conditions, ensuring reliability in harsh environments.

No. of Sectors/Size: 4,127

A large number of sectors allows for flexible data management and efficient storage utilization.

Terminal Finish: TIN LEAD

Tin-lead terminal finish provides excellent solderability and enhances electrical performance.

Terminal Position: BOTTOM

Bottom terminal positioning is advantageous for space-constrained designs and enhances thermal dissipation.

Maximum Seated Height: 1 mm

The low seated height contributes to a thinner profile, essential for ultra-compact devices.

Width: 7.7 mm

A narrow width allows for better placement in confined spaces, facilitating innovative designs.

Minimum Supply Voltage (Vsup): 1.7 V

This minimum voltage ensures compatibility with a wide range of power systems, enhancing design flexibility.

Page Size (words): 4

A small page size aids in fine-grained control of memory access, improving response times for specific applications.

Type: NOR TYPE

NOR flash type supports random access and is ideal for applications requiring fast read operations.

Common Flash Interface: YES

A common interface simplifies integration with various system architectures and promotes compatibility.

Length: 9 mm

A compact length further enhances the ability to fit within tight spaces in electronic systems.

Programming Voltage (V): 1.8

Low programming voltage minimizes the risk of damage to the memory cells and improves reliability during programming.

Temperature Grade: INDUSTRIAL

Industrial grade ensures high reliability for long-term operation in demanding environments.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making it suitable for modern electronic devices.

Parallel or Serial: PARALLEL

Parallel configuration allows for faster data transfer speeds, beneficial for high-performance applications.

Terminal Form: BALL

Ball terminal form enhances soldering efficiency and improves thermal management.

Sector Size (Words): 16K,64K

Flexible sector sizes allow for variable storage needs, optimizing memory usage for different applications.

Maximum Supply Current: 27 mA

A moderate supply current ensures balanced power consumption, suitable for both portable and stationary applications.

No. of Words: 8388608 words

A high word count provides substantial storage capacity, accommodating various data-intensive applications.

Memory Width: 16

A memory width of 16 bits facilitates efficient data handling, improving processing performance.

Terminal Pitch: 0.75 mm

A small terminal pitch enables tighter spacing on the PCB, advantageous for high-density designs.

No. of Words Code: 8M

This coding provides clear understanding of storage capacity, aligning with industry standards.

Command User Interface: YES

A user-friendly command interface simplifies integration into various systems and expedites prototyping.

Maximum Supply Voltage (Vsup): 2 V

A maximum supply voltage of 2 V ensures safe operation without exceeding necessary limits for reliability.

Boot Block: TOP

Top boot block configuration aids in fast booting operations, critical for applications demanding immediate readiness.

Memory Density: 134217728 bit

High memory density increases storage capacity, making it suitable for applications requiring extensive data storage.

Memory IC Type: FLASH

Being a flash memory type allows for non-volatile storage, ensuring data retention even when power is lost.

Maximum Standby Current: 0.000005 Amp

Extremely low standby current maximizes battery life in portable applications, enhancing energy efficiency.

Maximum Access Time: 85 ns

Fast access time improves overall system performance, beneficial for applications requiring quick data retrieval.

Technical Specifications

Flash Memory M58LR128FT85ZB6T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

85 ns

Additional Features:

SYNCHRONOUS BURST MODE OPERATION POSSIBLE

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B56

JESD-609 Code:

e0

Length:

9 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,127

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA56,7X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Page Size (words):

4

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

27 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Width:

7.7 mm

Trade Compliance

M58LR128FT85ZB6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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