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M58LR128GB85ZB5E

STMicroelectronics

M58LR128GB85ZB5E by STMicroelectronics

M58LR128GB85ZB5E by STMicroelectronics is a NOR flash memory with 8M words capacity, operating at 1.8V and featuring a very thin profile (1mm height). It supports asynchronous mode and offers fast access times of 85ns, ideal for embedded applications. With a wide temp range (-25 °C to 85 °C), it's perfect for reliable data storage in various environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,040 parts In-Stock

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7,040

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Digiode

USA . 5,122 parts In-Stock

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5,122

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Anansix

USA . 1,513 parts In-Stock

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1,513

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,326 parts In-Stock

1+ parts

$5.139

100+ parts

-

1k+ parts

$4.625

10k+ parts

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1,326

$5.139

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$4.625

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MKK Technologies

India . 209 parts In-Stock

1+ parts

$9.664

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209

$9.664

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DigiPath Technology Company

USA . 209 parts In-Stock

1+ parts

$9.664

100+ parts

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209

$9.664

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Corphita

USA . 2,033 parts In-Stock

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2,033

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Parana Technologies

USA . 873 parts In-Stock

1+ parts

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$6.145

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873

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$6.145

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Overview

Transform your technology with the M58LR128GB85ZB5E flash memory by STMicroelectronics. Renowned for exceptional quality and reliability, STMicroelectronics ensures that this versatile memory solution is perfect for a wide range of applications—from consumer electronics to industrial systems. Enjoy faster data access, low power consumption, and robust performance in demanding environments. Elevate your designs with a product that reflects innovation and excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy ensures the product is lightweight and resistant to environmental factors.

Surface Mount: YES

Surface mount technology allows for compact circuit designs and efficient assembly processes.

Package Shape: RECTANGULAR

The rectangular shape is optimal for integration into various PCB layouts, ensuring flexibility in design.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides faster data access, enhancing overall system performance.

Nominal Supply Voltage / Vsup: 1.8V

Low voltage operation (1.8V) leads to decreased power consumption, making it suitable for battery-operated devices.

Power Supplies (V): 1.8

This specification reduces heat generation and extends the longevity of the device.

No. of Terminals: 56

A greater number of terminals facilitates better connectivity options for integrated systems.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

A very thin profile and fine pitch design allows for high-density mounting, saving space on PCBs.

Maximum Operating Temperature: 85 °C

An operating temperature up to 85 °C ensures reliability in conditions with elevated heat, ideal for harsh environments.

Organization: 8MX16

This organization indicates a significant capacity in handling large amounts of data efficiently.

Minimum Operating Temperature: -25 °C

Supports a wide temperature range, making it suitable for diverse applications in various climates.

No. of Sectors/Size: 4,127

Multiple sectors enhance data management and increase efficiency in information storage.

Terminal Position: BOTTOM

Bottom terminal positions are favorable for PCB designs that require specific orientations and layouts.

Maximum Seated Height: 1 mm

A low seated height promotes integration into compact devices without interfering with adjacent components.

Width: 7.7 mm

The narrow width aids in designing tighter layouts, maximizing board space utilization.

Minimum Supply Voltage (Vsup): 1.7 V

The lower limit of supply voltage emphasizes flexibility in applications where power supply might fluctuate.

Page Size (words): 8

Small page size allows for efficient writing operations, making it ideal for applications with frequent updates.

Type: NOR TYPE

NOR flash provides random access read capabilities, making it efficient for executing code directly from memory.

Common Flash Interface: YES

Compatibility with common interfaces facilitates easier integration with various systems and designs.

Length: 9 mm

Short length enables more compact electronic designs, providing more flexibility for manufacturers.

Programming Voltage (V): 1.8

This low programming voltage minimizes power consumption during programming, which is advantageous for mobile applications.

Technology: CMOS

CMOS technology ensures low power consumption while maintaining high performance, crucial for modern applications.

Parallel or Serial: PARALLEL

Parallel interface configuration allows faster data transfer rates, enhancing data processing speed.

Terminal Form: BALL

Ball terminal form provides reliable attachment points for soldering, improving mechanical stability.

Sector Size (Words): 16K, 64K

Varied sector sizes allow for flexibility in storage management, providing options for different applications.

Maximum Supply Current: 52 mA

The maximum supply current is manageable, contributing to overall energy efficiency in designs.

No. of Words: 8,388,608 words

A large word count supports extensive data storage requirements, making it suitable for complex applications.

Memory Width: 16

The 16-bit memory width strikes a balance between efficient data handling and complexity.

Terminal Pitch: 0.75 mm

A fine terminal pitch enhances the fitting capabilities for tightly packed designs in modern electronics.

No. of Words Code: 8M

8 million words denotes significant capacity, making this memory ideal for use in data-intensive applications.

Command User Interface: YES

A user-friendly command interface simplifies programming and operations, making it accessible for developers.

Maximum Supply Voltage (Vsup): 2 V

The upper limit ensures compatibility with a wide range of circuit designs and allows flexibility in integrated systems.

Boot Block: BOTTOM

A bottom boot block efficiently manages boot processes, ensuring quick system start-up times.

Memory Density: 134,217,728 bit

High memory density is suitable for applications needing compact storage solutions with vast data handling capabilities.

Memory IC Type: FLASH

The flash memory type provides non-volatile storage, ensuring data retention even when power is lost.

Maximum Standby Current: 0.000005 Amp

Extremely low standby current draws less power when not in use, contributing to energy savings in devices.

Maximum Access Time: 85 ns

Quick access time enhances overall system speed and performance, making it ideal for high-speed applications.

Technical Specifications

Flash Memory M58LR128GB85ZB5E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

85 ns

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B56

Length:

9 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,127

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA56,7X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Page Size (words):

8

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1.8

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

7.7 mm

Trade Compliance

M58LR128GB85ZB5E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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