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M58LR128FT95ZB6T

STMicroelectronics

M58LR128FT95ZB6T by STMicroelectronics

M58LR128FT95ZB6T from STMicroelectronics is a 1.8V NOR Flash memory with a density of 128Mb, featuring a max access time of 95ns and operating temp range from -40 °C to 85 °C. Ideal for industrial applications, it supports asynchronous operation in a compact grid array package. With 4,127 sectors and fine pitch terminals, it's designed for efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,362 parts In-Stock

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2,362

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Anansix

USA . 1,492 parts In-Stock

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1,492

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Digiode

USA . 1,060 parts In-Stock

1+ parts

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1,060

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,755 parts In-Stock

1+ parts

$4.464

100+ parts

-

1k+ parts

$4.017

10k+ parts

-

1,755

$4.464

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$4.017

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MKK Technologies

India . 1,145 parts In-Stock

1+ parts

$8.394

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1,145

$8.394

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DigiPath Technology Company

USA . 1,145 parts In-Stock

1+ parts

$8.394

100+ parts

-

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10k+ parts

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1,145

$8.394

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Corphita

USA . 2,222 parts In-Stock

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2,222

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Parana Technologies

USA . 551 parts In-Stock

1+ parts

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100+ parts

$5.337

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551

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$5.337

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Overview

Unlock the potential of your designs with the M58LR128FT95ZB6T flash memory from STMicroelectronics, a leader in innovation and quality. This versatile NOR flash memory offers exceptional performance for various industrial applications, ensuring reliability even in demanding environments. With its ultra-thin profile and low power consumption, it delivers outstanding value and efficiency, empowering your next project with superior data storage solutions. Experience innovation that drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy ensures protection from environmental factors, which enhances the reliability of the product.

Surface Mount: YES

Surface mounting allows for a compact design and easier integration into various electronic applications.

Package Shape: RECTANGULAR

The rectangular package shape maximizes space efficiency on printed circuit boards.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for fast data access, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low nominal voltage minimizes power consumption, making it suitable for energy-efficient designs.

Power Supplies (V): 1.8

A consistent power supply of 1.8V streamlines power management in devices that require low-voltage operation.

No. of Terminals: 56

A higher number of terminals provides flexibility for connectivity and functionality within complex circuits.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The fine pitch and thin profile make it ideal for high-density applications where space is a premium.

Maximum Operating Temperature: 85 °C

Operating at higher temperatures ensures reliability in demanding environments typical in industrial applications.

Organization: 8MX16

This specific organization indicates efficient data management and transfer capabilities.

Minimum Operating Temperature: -40 °C

The wide temperature range (-40 °C to 85 °C) makes this product suitable for harsh environmental conditions.

No. of Sectors/Size: 4,127

Having a high number of sectors allows for better organization and management of memory data.

Terminal Finish: TIN LEAD

Tin-lead finish provides excellent solderability and corrosion resistance enhancing longevity.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates efficient thermal management and electrical connectivity in compact designs.

Maximum Seated Height: 1 mm

A low seated height enables integration in ultra-thin devices without compromising performance.

Width: 7.7 mm

Compact width allows for efficient PCB layout, crucial in miniaturized applications.

Minimum Supply Voltage (Vsup): 1.7 V

The wide operating voltage range helps in adapting to various power supply configurations.

Page Size (words): 4

A small page size supports efficient programming and erasure, enhancing performance.

Type: NOR TYPE

NOR flash enables random access which is beneficial for quick data retrieval.

Common Flash Interface: YES

Compatibility with common flash interfaces simplifies integration across different platforms.

Length: 9 mm

Compact length contributes to the overall space-saving design essential for modern electronics.

Programming Voltage (V): 1.8

Operating at 1.8V programming voltage reduces stress on the device, extending its lifespan.

Temperature Grade: INDUSTRIAL

Industrial-grade components guarantee reliability under rigorous operating conditions.

Technology: CMOS

CMOS technology results in lower power usage and higher speed, ideal for advanced applications.

Parallel or Serial: PARALLEL

Parallel data reading and writing allows for faster access times compared to serial configurations.

Terminal Form: BALL

Ball terminal configuration enhances surface contact area for better electrical connectivity.

Sector Size (Words): 16K,64K

Diverse sector sizes cater to varying application requirements, providing flexibility in data management.

Maximum Supply Current: 27 mA

Low maximum current consumption allows for efficient battery life in portable applications.

No. of Words: 8388608 words

With such a high word count, this product provides substantial storage capacity for applications.

Memory Width: 16

The memory width enhances data throughput, making it suitable for high-speed data applications.

Terminal Pitch: 0.75 mm

A smaller terminal pitch allows for denser layouts in modern electronic designs.

No. of Words Code: 8M

Ability to handle 8 million words signifies a high storage capability, accommodating extensive data.

Command User Interface: YES

A user-friendly command interface simplifies programming and operation for developers.

Maximum Supply Voltage (Vsup): 2 V

The maximum voltage rating provides added flexibility for different power supply designs.

Boot Block: TOP

Top boot block configuration enhances quick booting processes for embedded applications.

Memory Density: 134217728 bit

High memory density maximizes storage without increasing physical size, ideal for space-constrained devices.

Memory IC Type: FLASH

Being a flash memory IC supports data retention without power, making it suitable for non-volatile applications.

Maximum Standby Current: 0.000005 Amp

Extremely low standby current ensures minimal power drain when the device is idle.

Maximum Access Time: 95 ns

Fast access time of 95 ns allows for quick data retrieval, enhancing system responsiveness.

Technical Specifications

Flash Memory M58LR128FT95ZB6T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

95 ns

Additional Features:

SYNCHRONOUS BURST MODE OPERATION POSSIBLE

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B56

JESD-609 Code:

e0

Length:

9 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,127

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA56,7X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Page Size (words):

4

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

27 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Width:

7.7 mm

Trade Compliance

M58LR128FT95ZB6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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