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M58LR128FB85ZB6T

STMicroelectronics

M58LR128FB85ZB6T by STMicroelectronics

M58LR128FB85ZB6T from STMicroelectronics is a 1.8V NOR Flash memory with a density of 134Mbit, featuring an asynchronous operating mode and a max access time of 85ns. It operates in extreme temps (-40 °C to 85 °C) and supports parallel interface. Ideal for industrial applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 5,553 parts In-Stock

1+ parts

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5,553

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Vyrian

USA . 4,786 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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4,786

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Anansix

USA . 479 parts In-Stock

1+ parts

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479

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,550 parts In-Stock

1+ parts

$2.260

100+ parts

-

1k+ parts

$2.034

10k+ parts

-

1,550

$2.260

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$2.034

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MKK Technologies

India . 2,280 parts In-Stock

1+ parts

$4.251

100+ parts

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2,280

$4.251

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DigiPath Technology Company

USA . 2,280 parts In-Stock

1+ parts

$4.251

100+ parts

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10k+ parts

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2,280

$4.251

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Corphita

USA . 4,982 parts In-Stock

1+ parts

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4,982

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Parana Technologies

USA . 1,816 parts In-Stock

1+ parts

-

100+ parts

$2.703

1k+ parts

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10k+ parts

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1,816

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$2.703

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Overview

Unlock unparalleled performance with the M58LR128FB85ZB6T flash memory from STMicroelectronics, a leader in semiconductor innovation. Designed for demanding industrial applications, this high-density NOR flash memory offers exceptional reliability and efficiency, enabling seamless data access even in extreme temperatures. With its compact, thin profile and power-saving features, it’s perfect for modern electronics seeking both quality and performance. Experience the advantage of industry-leading technology that enhances your devices and drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures a sturdy product that can withstand various environmental conditions.

Surface Mount: YES

Surface mount capability simplifies the integration of this flash memory into modern electronic circuits, enhancing design flexibility.

Package Shape: RECTANGULAR

The rectangular shape optimizes space and allows for a more straightforward layout on PCB.

Operating Mode: ASYNCHRONOUS

An asynchronous operating mode enables faster data access and improved performance in applications requiring quick data retrieval.

Nominal Supply Voltage / Vsup (V): 1.8

This low nominal supply voltage contributes to reduced power consumption, making it ideal for battery-operated devices.

Power Supplies (V): 1.8

Operating at a low voltage of 1.8V enhances energy efficiency, making it suitable for low-power applications.

No. of Terminals: 56

The high number of terminals allows for greater connectivity options and facilitates diverse application uses.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The fine pitch and thin profile design enable high-density layouts, making it suitable for compact electronic devices.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this flash memory is reliable in harsh environments, ensuring greater versatility.

Organization: 8MX16

The organization of 8MX16 allows for efficient data access and manipulation in high-performance applications.

Minimum Operating Temperature: -40 °C

This wide temperature range (-40 °C to 85 °C) makes it suitable for industrial applications and extreme environments.

No. of Sectors/Size: 4,127

A high number of sectors supports complex data management and enhances overall performance in storage applications.

Terminal Finish: TIN LEAD

TIN LEAD finish ensures reliable electrical connections and compatibility with a variety of soldering processes.

Terminal Position: BOTTOM

Bottom terminal positioning is advantageous for better thermal management and space-saving layouts.

Maximum Seated Height: 1 mm

With a low seated height of 1 mm, this flash memory can fit into ultra-thin devices without compromising performance.

Width: 7.7 mm

The compact width allows for integration into a variety of small form-factor designs.

Minimum Supply Voltage (Vsup): 1.7 V

Operating at a minimum voltage of 1.7V ensures flexibility for variations in power supply.

Page Size (words): 4

A small page size allows for fine-grained data management, improving read and write efficiency.

Type: NOR TYPE

NOR type memory provides fast random access, making it suitable for applications requiring quick data retrieval.

Common Flash Interface: YES

A common flash interface enhances compatibility with various systems, simplifying the integration process.

Length: 9 mm

Compact length supports installation in space-constrained applications.

Programming Voltage (V): 1.8

Lower programming voltage reduces power requirements and extends the lifespan of the device.

Temperature Grade: INDUSTRIAL

Industrial-grade components ensure reliability and longevity in demanding applications.

Technology: CMOS

Using CMOS technology combines high speed with low power, making it efficient for modern applications.

Parallel or Serial: PARALLEL

Parallel connectivity allows for higher data throughput, making it efficient for high-speed applications.

Terminal Form: BALL

Ball terminal form provides stability and reliable connections, which is essential for modern electronic designs.

Sector Size (Words): 16K, 64K

Variable sector sizes cater to different data storage needs, enhancing flexibility in various applications.

Maximum Supply Current: 47 mA

Lower maximum supply current contributes to energy savings in battery-powered devices.

No. of Words: 8388608 words

A significant number of words supports substantial data storage, making it ideal for complex applications.

Memory Width: 16

A memory width of 16 allows for efficient data transfer and improved performance in processing.

Terminal Pitch: 0.75 mm

The 0.75 mm terminal pitch allows for compact layouts, maximizing PCB real estate.

No. of Words Code: 8M

Indicating a sizable capacity, the 8M code supports extensive applications requiring large memory storage.

Command User Interface: YES

A user-friendly command interface simplifies interaction, improving system design ease and functionality.

Maximum Supply Voltage (Vsup): 2 V

Operating at a maximum supply voltage of 2V maintains lower power consumption, enhancing battery life.

Boot Block: BOTTOM

A bottom boot block configuration increases memory performance for boot operations, streamlining system start-up.

Memory Density: 134217728 bit

High memory density allows for substantial data storage capacity within a compact form factor.

Memory IC Type: FLASH

Being a flash memory type provides non-volatile storage, preserving data without power.

Maximum Standby Current: 0.000005 Amp

Extremely low standby current minimizes power consumption during idle periods, enhancing energy efficiency.

Maximum Access Time: 85 ns

Fast access time of 85 ns ensures quick data retrieval, essential for high-performance applications.

Technical Specifications

Flash Memory M58LR128FB85ZB6T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

85 ns

Additional Features:

SYNCHRONOUS BURST MODE OPERATION POSSIBLE

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B56

JESD-609 Code:

e0

Length:

9 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,127

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA56,7X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Page Size (words):

4

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

47 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Width:

7.7 mm

Trade Compliance

M58LR128FB85ZB6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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