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M58LR128FT95ZB6

STMicroelectronics

M58LR128FT95ZB6 by STMicroelectronics

M58LR128FT95ZB6 by STMicroelectronics is a 1.8V NOR flash memory with a density of 134Mbit, featuring a max access time of 95ns and operating temp range from -40 °C to 85 °C. Ideal for industrial applications, it supports asynchronous mode and has a very thin profile design. Its compact size (7.7mm x 9mm) makes it suitable for space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,905 parts In-Stock

1+ parts

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2,905

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Anansix

USA . 2,602 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,602

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Vyrian

USA . 1,508 parts In-Stock

1+ parts

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100+ parts

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1,508

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,140 parts In-Stock

1+ parts

$3.917

100+ parts

-

1k+ parts

$3.526

10k+ parts

-

2,140

$3.917

-

$3.526

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MKK Technologies

India . 1,437 parts In-Stock

1+ parts

$7.366

100+ parts

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1,437

$7.366

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DigiPath Technology Company

USA . 1,437 parts In-Stock

1+ parts

$7.366

100+ parts

-

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10k+ parts

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1,437

$7.366

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Corphita

USA . 4,194 parts In-Stock

1+ parts

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4,194

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Parana Technologies

USA . 1,421 parts In-Stock

1+ parts

-

100+ parts

$4.684

1k+ parts

-

10k+ parts

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1,421

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$4.684

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Overview

Unlock unparalleled performance with the M58LR128FT95ZB6 from STMicroelectronics, a leader in innovative technology. This NOR Flash memory solution delivers exceptional reliability and speed, ideal for industrial applications like automotive systems and consumer electronics. With its compact design and low power consumption, you can maximize efficiency while minimizing costs. Trust in STMicroelectronics' commitment to quality and elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers robust protection against environmental factors, ensuring durability and reliability in demanding applications.

Surface Mount: YES

Surface mount technology allows for compact design, facilitating efficient use of space on PCBs while enabling automated assembly.

Package Shape: RECTANGULAR

The rectangular package shape accommodates a more efficient layout and optimized spacing, enhancing integration with other components.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides faster data access and flexibility in integration with various systems, ensuring quicker response times.

Nominal Supply Voltage / Vsup: 1.8 V

A low nominal supply voltage contributes to reduced power consumption, making this flash memory suitable for energy-efficient applications.

Power Supplies (V): 1.8

Operating on a single 1.8V power supply simplifies design and enhances compatibility with modern low-voltage digital systems.

No. of Terminals: 56

More terminals allow for increased connectivity options and flexible integration into complex circuit designs.

Package Style: GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The very thin profile and fine pitch enhance space-saving capabilities, making it particularly suitable for compact electronic designs.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C enables reliable operation in challenging environments, suitable for industrial applications.

Organization: 8MX16

This organization provides a good balance between memory size and access efficiency, making it ideal for data-centric applications.

Minimum Operating Temperature: -40 °C

The ability to function at -40 °C ensures reliability in extreme conditions, making it perfect for automotive and industrial uses.

No. of Sectors/Size: 4,127

A high number of sectors allows for efficient data management and organization, making it easier to optimize storage.

Terminal Finish: TIN LEAD

Tin lead finish enhances solderability and reliability of connections, ensuring long-term performance in electronic applications.

Terminal Position: BOTTOM

Bottom terminal positioning allows for better grounding and thermal performance, which is crucial in high-density designs.

Maximum Seated Height: 1 mm

The low seated height facilitates a compact design, making it ideal for space-constrained applications.

Width: 7.7 mm

A width of 7.7 mm allows for efficient spacing on the PCB, contributing to optimized layout design.

Minimum Supply Voltage (Vsup): 1.7 V

Operating at a low minimum supply voltage enhances power efficiency, making it suitable for battery-operated devices.

Page Size (words): 4

A smaller page size facilitates faster programming and erasing, improving the overall performance in real-time applications.

Type: NOR TYPE

NOR type flash memory is optimized for read operations, providing faster access times and reliability for code storage.

Common Flash Interface: YES

With a common flash interface, this memory is highly compatible with various controllers and microprocessors, simplifying integration.

Length: 9 mm

A compact length of 9 mm ensures ease of integration into small form factor designs without compromising performance.

Programming Voltage (V): 1.8

A low programming voltage enhances safety and compatibility with low-voltage logic systems.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this memory can withstand harsh conditions, ensuring long-term reliability.

Technology: CMOS

CMOS technology provides lower power consumption and higher density, making it suitable for modern applications.

Parallel or Serial: PARALLEL

Parallel access offers higher data throughput, enabling quicker read and write operations for performance-critical applications.

Terminal Form: BALL

Ball terminal form allows for enhanced mechanical stability and better heat dissipation, which is essential in high-performance environments.

Sector Size (Words): 16K, 64K

Flexible sector sizes allow for adaptable data management strategies, making it easier to optimize storage for various applications.

Maximum Supply Current: 27 mA

With low maximum supply current, this flash memory is energy-efficient, ideal for power-sensitive applications.

No. of Words: 8388608 words

A substantial word count provides ample storage for complex applications, accommodating large data sets.

Memory Width: 16

A memory width of 16 bits enhances data handling capabilities, providing efficient processing for modern applications.

Terminal Pitch: 0.75 mm

A tight terminal pitch allows for denser packing of components, which is valuable in space-constrained devices.

No. of Words Code: 8M

Offering 8 million words of memory makes it suitable for high-capacity applications and data storage solutions.

Command User Interface: YES

User-friendly command interface simplifies the interaction with the memory, enhancing ease of use in various applications.

Maximum Supply Voltage (Vsup): 2 V

A low maximum supply voltage ensures compatibility with low-voltage systems, promoting energy-efficient designs.

Boot Block: TOP

The top boot block architecture allows for quicker firmware updates and data integrity, essential for embedded applications.

Memory Density: 134217728 bit

A high memory density supports more data storage within a compact footprint, ideal for modern high-capacity needs.

Memory IC Type: FLASH

As a flash memory IC, it ensures fast read and write cycles, providing significant advantages for transient data storage.

Maximum Standby Current: 0.000005 Amp

Extremely low standby current enhances power efficiency, crucial for battery-operated devices and applications.

Maximum Access Time: 95 ns

A maximum access time of 95 ns allows for quick data retrieval, optimizing performance in data-intensive scenarios.

Technical Specifications

Flash Memory M58LR128FT95ZB6 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

95 ns

Additional Features:

SYNCHRONOUS BURST MODE OPERATION POSSIBLE

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B56

JESD-609 Code:

e0

Length:

9 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,127

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA56,7X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Page Size (words):

4

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

27 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Width:

7.7 mm

Trade Compliance

M58LR128FT95ZB6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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