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M58LR128FT95ZB6E

STMicroelectronics

M58LR128FT95ZB6E by STMicroelectronics

M58LR128FT95ZB6E from STMicroelectronics is a 1.8V NOR Flash memory with a density of 128Mb, featuring asynchronous operation and a max access time of 95 ns. It operates in extreme temperatures (-40 °C to 85 °C) and supports parallel interface. Ideal for industrial applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,746 parts In-Stock

1+ parts

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2,746

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Digiode

USA . 2,603 parts In-Stock

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2,603

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Vyrian

USA . 2,189 parts In-Stock

1+ parts

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2,189

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,100 parts In-Stock

1+ parts

$5.010

100+ parts

-

1k+ parts

$4.509

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-

1,100

$5.010

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$4.509

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MKK Technologies

India . 1,280 parts In-Stock

1+ parts

$9.422

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1,280

$9.422

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DigiPath Technology Company

USA . 1,280 parts In-Stock

1+ parts

$9.422

100+ parts

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1,280

$9.422

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Corphita

USA . 303 parts In-Stock

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303

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Parana Technologies

USA . 147 parts In-Stock

1+ parts

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$5.991

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147

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$5.991

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Overview

Unlock the future of your electronic designs with the M58LR128FT95ZB6E Flash Memory by STMicroelectronics. Renowned for their high-quality components, STMicroelectronics delivers unmatched reliability and performance, perfect for industrial applications. With its compact size and adaptability, this memory solution ensures low power consumption and fast access times, providing superior efficiency that enhances your devices. Experience innovation at its finest with ST's trusted technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures reliability in various environmental conditions, making the product suitable for industrial applications.

Surface Mount: YES

Surface mount technology allows for a compact design, enabling more efficient use of space on printed circuit boards.

Package Shape: RECTANGULAR

The rectangular shape provides a standardized footprint that can be easily integrated into most circuit designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data access and improved performance in applications where speed is critical.

Nominal Supply Voltage / Vsup (V): 1.8

Low operating voltage of 1.8V helps in reducing overall power consumption, making it ideal for battery-powered devices.

Power Supplies (V): 1.8

The minimal power supply requirement aids in the energy efficiency and longevity of electronic circuits.

No. of Terminals: 56

A higher number of terminals provides greater versatility for connections and increased functionality.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

This package style allows for a more compact design, which is advantageous in modern electronic applications where space is limited.

Maximum Operating Temperature: 85 °C

High maximum temperature rating enhances reliability and performance in demanding environments.

Organization: 8MX16

This memory organization optimizes performance and efficiency in data storage and retrieval.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures functionality in extreme conditions, making it suitable for industrial and automotive applications.

No. of Sectors/Size: 4,127

A high number of sectors allows for efficient memory management and enhanced data organization.

Terminal Finish: TIN SILVER COPPER

This finish ensures superior conductivity and improved performance over time.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy integration onto PCBs, simplifying assembly processes.

Maximum Seated Height: 1 mm

The low seated height aids in creating a slim profile, suitable for space-constrained applications.

Width: 7.7 mm

Compact width enables better layout designs within small electronic devices.

Minimum Supply Voltage (Vsup): 1.7 V

This flexibility in voltage requirements increases compatibility with various electronic designs.

Page Size (words): 4

Small page size allows for efficient use of memory during operations, contributing to faster data processing.

Type: NOR TYPE

NOR flash offers fast read speeds and flexibility in random access, making it an excellent choice for various applications.

Common Flash Interface: YES

Compatibility with standard interfaces simplifies integration into existing systems, reducing development time.

Length: 9 mm

This compact length supports easy placement on small form-factor boards.

Programming Voltage (V): 1.8

Low programming voltage ensures safer operations and compatibility with low-power systems.

Temperature Grade: INDUSTRIAL

Industrial grade signifies higher durability and reliability, suitable for harsh environments.

Technology: CMOS

CMOS technology trends towards lower power usage and faster performance, enhancing device efficiency.

Parallel or Serial: PARALLEL

Parallel interface allows for high-speed data access, critical for performance-intensive applications.

Terminal Form: BALL

Ball terminal form enhances solderability and reliability in surface mounting.

Sector Size (Words): 16K,64K

Flexible sector sizes enable tailored memory management based on specific application needs.

Maximum Supply Current: 27 mA

A moderate supply current helps maintain energy efficiency during operation.

No. of Words: 8388608 words

Generous word count provides ample storage capacity, accommodating data-rich applications.

Memory Width: 16

A 16-bit memory width ensures compatibility with most modern processors, improving performance.

Terminal Pitch: 0.75 mm

This fine pitch allows for high density of connections, making it ideal for advanced systems.

No. of Words Code: 8M

The substantial word code translates to significant storage capability, suitable for a variety of applications.

Command User Interface: YES

User-friendly interface simplifies command execution, enhancing the overall user experience.

Maximum Supply Voltage (Vsup): 2 V

The ability to operate at a maximum of 2V ensures compatibility with newer, low-voltage designs.

Boot Block: TOP

Top boot block organization allows for faster access to critical startup code, improving system responsiveness.

Memory Density: 134217728 bit

High memory density ensures sufficient space for storing large amounts of data in a compact form factor.

Memory IC Type: FLASH

Flash memory type provides non-volatile storage, maintaining data without power.

Maximum Standby Current: 0.000005 Amp

Extremely low standby current supports energy-efficient designs, prolonging battery life in portable devices.

Maximum Access Time: 95 ns

Fast access time enhances overall system performance, making it suitable for high-speed applications.

Technical Specifications

Flash Memory M58LR128FT95ZB6E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

95 ns

Additional Features:

SYNCHRONOUS BURST MODE OPERATION POSSIBLE

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B56

JESD-609 Code:

e1

Length:

9 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,127

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA56,7X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Page Size (words):

4

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

27 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Width:

7.7 mm

Trade Compliance

M58LR128FT95ZB6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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