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M58LR128FB95ZB6F

STMicroelectronics

M58LR128FB95ZB6F by STMicroelectronics

M58LR128FB95ZB6F from STMicroelectronics is a 1.8V NOR Flash memory with a density of 128Mb, featuring a fast access time of 95ns and operating in an asynchronous mode. Its compact design (7.7mm x 9mm) makes it ideal for industrial applications requiring reliable data storage. With a wide temperature range (-40 °C to 85 °C), it's perfect for harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,252 parts In-Stock

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Vyrian

USA . 2,783 parts In-Stock

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2,783

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Anansix

USA . 277 parts In-Stock

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277

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,334 parts In-Stock

1+ parts

$5.337

100+ parts

-

1k+ parts

$4.803

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2,334

$5.337

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$4.803

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MKK Technologies

India . 1,095 parts In-Stock

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$10.036

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$10.036

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DigiPath Technology Company

USA . 1,095 parts In-Stock

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$10.036

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1,095

$10.036

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Corphita

USA . 3,940 parts In-Stock

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3,940

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Parana Technologies

USA . 13 parts In-Stock

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$6.381

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13

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$6.381

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Overview

Unlock exceptional performance with the M58LR128FB95ZB6F from STMicroelectronics, a leader in innovative solutions. This high-quality flash memory chip offers unparalleled reliability and efficiency, perfect for industrial applications where durability is key. With its compact design and low power consumption, it seamlessly integrates into your systems, delivering rapid access times and robust data storage. Choose STMicroelectronics for trusted technology that empowers your projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides a lightweight and durable package, making it suitable for a variety of applications.

Surface Mount: YES

Surface mount capability allows for compact and efficient board designs, ensuring easier integration into modern electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on the PCB, which is crucial for space-constrained applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data access and can improve overall system performance.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low nominal supply voltage of 1.8V helps in reducing power consumption, making it suitable for battery-powered devices.

Power Supplies (V): 1.8

A consistent power supply requirement of 1.8V ensures compatibility with low-power systems.

No. of Terminals: 56

Having 56 terminals provides ample connection options for routing data and power, enhancing versatility.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The thin profile and fine pitch design allow for high-density mounting, essential for modern compact electronics.

Maximum Operating Temperature: 85 °C

This temperature range makes the product suitable for various industrial and automotive applications.

Organization: 8MX16

An 8MX16 organization provides a high level of integration while maintaining efficient data access patterns.

Minimum Operating Temperature: -40 °C

The wide temperature range guarantees reliable operation in harsh environments, meeting industrial standards.

No. of Sectors/Size: 4,127

Having multiple sectors allows for efficient organization and management of memory, enhancing data retrieval.

Terminal Finish: TIN SILVER COPPER

The terminal finish ensures good electrical conductivity and resistance to corrosion, improving longevity.

Terminal Position: BOTTOM

Bottom terminal position can improve the PCB layout and minimizes the footprint of the component.

Maximum Seated Height: 1 mm

A maximum seated height of just 1 mm ensures ultra-thin designs, crucial for mobile and portable devices.

Width: 7.7 mm

A compact width of 7.7 mm allows for flexible placement on PCBs without wasting space.

Minimum Supply Voltage (Vsup): 1.7 V

The minimum supply voltage of 1.7V ensures operational flexibility in diverse applications.

Page Size (words): 4

A small page size facilitates faster read and write operations, improving overall system responsiveness.

Type: NOR TYPE

As a NOR type memory, it allows for random access which is beneficial for code execution and data retrieval.

Common Flash Interface: YES

Compatibility with a common flash interface simplifies integration with existing systems.

Length: 9 mm

A concise length of 9 mm aids in maintaining a compact product design without sacrificing functionality.

Programming Voltage (V): 1.8

A programming voltage of 1.8V contributes to low power consumption during write operations.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, ensuring reliability under demanding environmental conditions.

Technology: CMOS

CMOS technology enables low power consumption and high-speed performance, making it energy efficient.

Parallel or Serial: PARALLEL

Parallel interface supports high-speed data transfer, allowing for faster data access and retrieval.

Terminal Form: BALL

Ball terminal form ensures reliable contact with the PCB and easy soldering.

Sector Size (Words): 16K, 64K

Variable sector sizes provide flexibility in memory management, suitable for different application requirements.

Maximum Supply Current: 47 mA

A maximum supply current of 47 mA indicates reasonable power demands for typical applications.

No. of Words: 8388608 words

With 8,388,608 words, this flash memory offers substantial storage capacity for various data-intensive applications.

Memory Width: 16

A memory width of 16 bits ensures efficient data processing and bandwidth utilization.

Terminal Pitch: 0.75 mm

A 0.75 mm terminal pitch allows for high-density mounting while maintaining sufficient spacing for soldering.

No. of Words Code: 8M

The 8M word code signifies high density, ensuring ample storage for complex applications and systems.

Command User Interface: YES

User interface commands simplify memory management and enhance ease of use in various applications.

Maximum Supply Voltage (Vsup): 2 V

A maximum supply voltage of 2V ensures flexibility for use in different applications without risk of damage.

Boot Block: BOTTOM

A bottom boot block configuration helps in secure boot functionality for embedded systems.

Memory Density: 134217728 bit

With a density of 134,217,728 bits, this memory provides extensive storage capacity for demanding applications.

Memory IC Type: FLASH

As a flash memory IC, it combines speed and durability, ideal for a wide range of applications.

Maximum Standby Current: 0.000005 Amp

A very low maximum standby current helps in energy-saving applications, prolonging battery life.

Maximum Access Time: 95 ns

With a maximum access time of 95 ns, this memory ensures rapid data retrieval, enhancing overall performance.

Technical Specifications

Flash Memory M58LR128FB95ZB6F attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

95 ns

Additional Features:

SYNCHRONOUS BURST MODE OPERATION POSSIBLE

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B56

JESD-609 Code:

e1

Length:

9 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,127

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA56,7X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Page Size (words):

4

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

47 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Width:

7.7 mm

Trade Compliance

M58LR128FB95ZB6F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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