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M58LR128FB95ZB6

STMicroelectronics

M58LR128FB95ZB6 by STMicroelectronics

M58LR128FB95ZB6 from STMicroelectronics is a 1.8V NOR Flash memory with a density of 128Mb, featuring a max access time of 95ns and operating temp range from -40 °C to 85 °C. Ideal for industrial applications, it supports asynchronous mode and has a very thin profile design. With 4,127 sectors and parallel interface, it's perfect for high-performance embedded systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,805 parts In-Stock

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2,805

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Digiode

USA . 2,092 parts In-Stock

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2,092

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Vyrian

USA . 483 parts In-Stock

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483

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,951 parts In-Stock

1+ parts

$5.351

100+ parts

-

1k+ parts

$4.816

10k+ parts

-

1,951

$5.351

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$4.816

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MKK Technologies

India . 839 parts In-Stock

1+ parts

$10.062

100+ parts

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839

$10.062

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DigiPath Technology Company

USA . 839 parts In-Stock

1+ parts

$10.062

100+ parts

-

1k+ parts

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10k+ parts

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839

$10.062

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Corphita

USA . 2,123 parts In-Stock

1+ parts

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2,123

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Parana Technologies

USA . 1,951 parts In-Stock

1+ parts

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100+ parts

$6.398

1k+ parts

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1,951

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$6.398

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Overview

Experience unmatched reliability and performance with the M58LR128FB95ZB6 Flash Memory from STMicroelectronics. Designed for industrial applications, this cutting-edge NOR Flash memory boasts exceptional low power consumption and a wide operating temperature range, making it perfect for demanding environments. Elevate your projects with ST's renowned quality and expertise, ensuring robust data retention and quick access times that deliver real value to your innovations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material ensures protection and reliability in various applications.

Surface Mount: YES

Allows for compact design and easy integration into modern electronic devices.

Package Shape: RECTANGULAR

Standard form factor enables compatibility with a wide range of PCBs.

Operating Mode: ASYNCHRONOUS

Promotes faster data access times, enhancing overall device performance.

Nominal Supply Voltage / Vsup (V): 1.8

Low voltage operation reduces power consumption, ideal for energy-sensitive applications.

Power Supplies (V): 1.8

Consistent power requirements simplify circuit design and improve efficiency.

No. of Terminals: 56

A sufficient number of terminals facilitates multiple connections for data and power.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Thin profile and fine pitch design optimize space utilization on PCBs.

Maximum Operating Temperature: 85 °C

Allows for operation in high-temperature environments, suitable for industrial applications.

Organization: 8MX16

Provides a large addressable space for more effective data storage organization.

Minimum Operating Temperature: -40 °C

Compatible with extreme cold conditions, ensuring reliable performance in harsh environments.

No. of Sectors/Size: 4,127

High sector count enables efficient data management and organization.

Terminal Finish: TIN LEAD

Lead finish ensures good solderability and long-lasting connections.

Terminal Position: BOTTOM

Bottom positioning facilitates better heat dissipation and mounting in tight spaces.

Maximum Seated Height: 1 mm

Low height profile is essential for space-constrained designs, enabling slim device profiles.

Width: 7.7 mm

Compact width supports the development of smaller electronic devices.

Minimum Supply Voltage (Vsup): 1.7 V

Further flexibility in design and compatibility with a variety of voltage levels.

Page Size (words): 4

Small page size allows for quicker and more efficient writing operations.

Type: NOR TYPE

NOR flash type is favored for its fast read performance and random access capabilities.

Common Flash Interface: YES

Standard interface simplifies integration with existing systems and software.

Length: 9 mm

Short length allows for space-efficient designs, particularly in portable devices.

Programming Voltage (V): 1.8

Low programming voltage makes operation safe and energy-efficient.

Temperature Grade: INDUSTRIAL

Rated for industrial use means higher reliability and longevity in tough conditions.

Technology: CMOS

CMOS technology provides low power consumption and high speed, enhancing overall efficiency.

Parallel or Serial: PARALLEL

Parallel access allows for faster data transfer rates, improving performance.

Terminal Form: BALL

Ball form aids in better mechanical stability and electrical performance.

Sector Size (Words): 16K, 64K

Flexible sector sizes accommodate various application storage needs.

Maximum Supply Current: 47 mA

Moderate current rating makes it energy efficient while delivering adequate performance.

No. of Words: 8388608 words

A large word count enables substantial data storage, perfect for complex applications.

Memory Width: 16

16-bit memory width allows for efficient data processing and improved throughput.

Terminal Pitch: 0.75 mm

Narrow pitch facilitates high-density designs, maximizing PCB functionality.

No. of Words Code: 8M

High memory capacity supports diverse application requirements, from consumer to industrial.

Command User Interface: YES

User interface enables easy interaction for programming and data manipulation.

Maximum Supply Voltage (Vsup): 2 V

Support for a maximum supply voltage of 2 V ensures safe operation across a range of devices.

Boot Block: BOTTOM

Bottom boot block configuration optimizes the design for quick boot times.

Memory Density: 134217728 bit

High memory density allows for the storage of large volumes of data.

Memory IC Type: FLASH

Flash memory type is ideal for re-writeable storage, offering flexibility and convenience.

Maximum Standby Current: 0.000005 Amp

Extremely low standby current minimizes power consumption when idle, enhancing battery life.

Maximum Access Time: 95 ns

Fast access time supports high-speed applications and improves overall responsiveness.

Technical Specifications

Flash Memory M58LR128FB95ZB6 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

95 ns

Additional Features:

SYNCHRONOUS BURST MODE OPERATION POSSIBLE

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B56

JESD-609 Code:

e0

Length:

9 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,127

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA56,7X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Page Size (words):

4

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

47 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Width:

7.7 mm

Trade Compliance

M58LR128FB95ZB6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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