Loading...

M58LR128FB95ZB6T

STMicroelectronics

M58LR128FB95ZB6T by STMicroelectronics

M58LR128FB95ZB6T from STMicroelectronics is a NOR Flash memory with 8M x 16 organization, operating at a nominal voltage of 1.8V. It features a max access time of 95 ns and operates in temperatures from -40 °C to 85 °C. Ideal for industrial applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,519 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,519

-

-

-

-

Digiode

USA . 648 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

648

-

-

-

-

Vyrian

USA . 272 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

272

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,757 parts In-Stock

1+ parts

$5.242

100+ parts

-

1k+ parts

$4.718

10k+ parts

-

1,757

$5.242

-

$4.718

-

MKK Technologies

India . 97 parts In-Stock

1+ parts

$9.858

100+ parts

-

1k+ parts

-

10k+ parts

-

97

$9.858

-

-

-

DigiPath Technology Company

USA . 97 parts In-Stock

1+ parts

$9.858

100+ parts

-

1k+ parts

-

10k+ parts

-

97

$9.858

-

-

-

Corphita

USA . 3,124 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,124

-

-

-

-

Parana Technologies

USA . 2,081 parts In-Stock

1+ parts

-

100+ parts

$6.268

1k+ parts

-

10k+ parts

-

2,081

-

$6.268

-

-

Overview

Unlock the power of innovation with the M58LR128FB95ZB6T Flash Memory from STMicroelectronics! Renowned for its exceptional quality and reliability, this cutting-edge memory solution is perfect for a wide range of applications, from industrial automation to automotive systems. With an ultra-thin profile and robust performance in harsh environments, it ensures seamless operation while saving space and energy. Experience enhanced efficiency and longevity, making your designs not only smarter but also future-ready!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material offers excellent protection against environmental factors, making the flash memory reliable for various applications.

Surface Mount: YES

The surface mount capability allows for compact designs and easier integration into modern circuit boards.

Package Shape: RECTANGULAR

The rectangular design facilitates efficient layout and optimized utilization of PCB space.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enhances data access speeds, making it ideal for high-performance applications.

Nominal Supply Voltage / Vsup: 1.8 V

Low operating voltage ensures lower power consumption, which is vital for battery-operated devices.

Power Supplies (V): 1.8 V

Utilizing a low-power supply can improve overall device efficiency, contributing to longer battery life.

No. of Terminals: 56

More terminals offer greater connectivity options, enabling flexible designs for various applications.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

A very thin profile allows for space-saving designs, perfect for modern electronics that require compact components.

Maximum Operating Temperature: 85 °C

With a high maximum temperature tolerance, the flash memory is suitable for industrial applications exposed to harsh conditions.

Organization: 8Mx16

This memory organization allows efficient data handling, making it ideal for a range of storage needs.

Minimum Operating Temperature: -40 °C

A wide operating temperature range ensures functionality in extreme environments, enhancing application versatility.

No. of Sectors/Size: 4,127

A large number of sectors improves data organization and access times, beneficial for complex applications.

Terminal Finish: TIN LEAD

Tin lead finishes provide reliable solderability and durability, ensuring stable connections over time.

Terminal Position: BOTTOM

Bottom terminal positioning simplifies mounting and assembly in various device configurations.

Maximum Seated Height: 1 mm

Low profile design helps in creating thinner devices without compromising performance.

Width: 7.7 mm

Compact width allows for high-density PCB layouts, enhancing the overall design efficiency of devices.

Minimum Supply Voltage (Vsup): 1.7 V

This low minimum voltage gives flexibility in system design, ensuring compatibility with a variety of power sources.

Page Size (words): 4

Small page size can facilitate quicker read and write operations, ideal for dynamic data applications.

Type: NOR TYPE

NOR type flash memory enables faster random access and is suitable for code storage and execution.

Common Flash Interface: YES

Compatibility with common flash interfaces simplifies integration and enables wider application support.

Length: 9 mm

A compact length supports smaller device designs, essential in today's miniaturized electronics.

Programming Voltage (V): 1.8 V

Operating with low programming voltage minimizes power usage and heat generation, enhancing longevity.

Temperature Grade: INDUSTRIAL

Industrial temperature grading signifies reliability and stability in harsh environments, perfect for critical applications.

Technology: CMOS

CMOS technology ensures lower power consumption while providing better performance and faster data processing.

Parallel or Serial: PARALLEL

Parallel operation allows for higher data transfer rates, making this memory suitable for demanding applications.

Terminal Form: BALL

Ball form factor provides better mechanical stability and electrical conductivity, enhancing device performance.

Sector Size (Words): 16K, 64K

Flexibility in sector sizes enables efficient memory usage tailored to specific application requirements.

Maximum Supply Current: 47 mA

A relatively low maximum supply current helps in managing power consumption effectively, prolonging battery life.

No. of Words: 8,388,608 words

A large word count provides substantial storage capacity for applications requiring extensive data retention.

Memory Width: 16

16-bit memory width supports efficient data processing and facilitates compatibility with various systems.

Terminal Pitch: 0.75 mm

Narrow terminal pitch enhances the compactness of the design, enabling higher density layouts.

No. of Words Code: 8M

An 8M word code signifies a significant amount of memory, catering to applications with substantial data requirements.

Command User Interface: YES

An accessible command interface simplifies programming and utilization, making it user-friendly for developers.

Maximum Supply Voltage (Vsup): 2 V

A low maximum supply voltage reduces stress on components, promoting longevity and reliability in performance.

Boot Block: BOTTOM

Bottom boot block design enhances the booting process, allowing for quicker system start-up.

Memory Density: 134,217,728 bit

High memory density ensures ample storage capacity, suitable for extensive data applications.

Memory IC Type: FLASH

Flash memory type provides non-volatile storage capabilities, making it ideal for long-term data retention.

Maximum Standby Current: 0.000005 A

Extremely low standby current minimizes battery drain when not in active use, enhancing overall efficiency.

Maximum Access Time: 95 ns

Fast maximum access time ensures timely data retrieval, crucial for applications necessitating swift responses.

Technical Specifications

Flash Memory M58LR128FB95ZB6T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

95 ns

Additional Features:

SYNCHRONOUS BURST MODE OPERATION POSSIBLE

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B56

JESD-609 Code:

e0

Length:

9 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,127

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA56,7X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Page Size (words):

4

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

47 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Width:

7.7 mm

Trade Compliance

M58LR128FB95ZB6T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20