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M58LR128FT95ZB6F

STMicroelectronics

M58LR128FT95ZB6F by STMicroelectronics

M58LR128FT95ZB6F from STMicroelectronics is a 128Mb NOR Flash memory with a 1.8V supply, featuring asynchronous operation and a max access time of 95 ns. It operates in extreme temperatures (-40 °C to 85 °C) and supports industrial applications. Its compact design (7.7mm x 9mm) makes it ideal for space-constrained devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,873 parts In-Stock

1+ parts

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4,873

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Digiode

USA . 3,871 parts In-Stock

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3,871

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Anansix

USA . 339 parts In-Stock

1+ parts

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339

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,334 parts In-Stock

1+ parts

$2.131

100+ parts

-

1k+ parts

$1.918

10k+ parts

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2,334

$2.131

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$1.918

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MKK Technologies

India . 1,847 parts In-Stock

1+ parts

$4.007

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1,847

$4.007

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DigiPath Technology Company

USA . 1,847 parts In-Stock

1+ parts

$4.007

100+ parts

-

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1,847

$4.007

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Corphita

USA . 2,370 parts In-Stock

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2,370

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Parana Technologies

USA . 539 parts In-Stock

1+ parts

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100+ parts

$2.548

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539

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$2.548

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Overview

Unlock unparalleled performance and reliability with the M58LR128FT95ZB6F Flash Memory from STMicroelectronics. Renowned for its cutting-edge technology, STMicroelectronics delivers a robust solution perfect for industrial applications requiring durability and efficiency. With low power consumption and fast access times, this memory module streamlines your designs while ensuring lasting quality. Elevate your projects with a trusted component designed for innovation and excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and protection from environmental factors.

Surface Mount: YES

Surface mount capability allows for compact design and easy integration into modern circuit boards.

Package Shape: RECTANGULAR

The rectangular shape optimizes space usage on PCB layouts, facilitating efficient design.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data access, making it suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 1.8

Low voltage operation (1.8V) helps in power savings, extending battery life in portable devices.

Power Supplies (V): 1.8

Single power supply voltage minimizes complexity in power management, simplifying circuit design.

No. of Terminals: 56

A higher number of terminals allows for better connectivity options and improved data transfer capabilities.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

The very thin profile and fine pitch design enable high-density packaging and space-saving solutions.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, it is suitable for industrial environments and applications.

Organization: 8MX16

The 8MX16 organization provides a good balance of capacity and performance for various applications.

Minimum Operating Temperature: -40 °C

Operating in extremely low temperatures (-40 °C) makes it ideal for harsh outdoor environments.

No. of Sectors/Size: 4,127

A high number of sectors allows for efficient data management and enhanced memory organization.

Terminal Finish: TIN SILVER COPPER

Tin, silver, and copper finish improves solderability and enhances reliability over time.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates efficient heat dispersion and helps in compact board layouts.

Maximum Seated Height: 1 mm

A low seated height allows for ultra-thin designs, making it preferable for compact electronics.

Width: 7.7 mm

Narrow width aids in high-density mounting, ideal for space-constrained applications.

Minimum Supply Voltage (Vsup): 1.7 V

Low minimum supply voltage ensures compatibility with a wider range of power supply sources.

Page Size (words): 4

The small page size may enable faster data access and more efficient data handling.

Type: NOR TYPE

NOR type flash provides random access capability, ideal for executing code directly from memory.

Common Flash Interface: YES

Support for a common flash interface simplifies integration with existing systems.

Length: 9 mm

Short length contributes to overall small form factor designs for portable devices.

Programming Voltage (V): 1.8

A programming voltage of 1.8V enhances compatibility with low-power applications.

Temperature Grade: INDUSTRIAL

Industrial temperature grading ensures reliability in demanding environments.

Technology: CMOS

CMOS technology provides low power consumption and high-speed operations.

Parallel or Serial: PARALLEL

Parallel data transfer allows for faster read/write operations, enhancing performance.

Terminal Form: BALL

Ball terminal form provides reliable connections and supports advanced PCB mounting techniques.

Sector Size (Words): 16K,64K

Versatile sector sizes provide flexibility in memory management and data handling.

Maximum Supply Current: 27 mA

Moderate supply current helps improve efficiency and manage heat generation.

No. of Words: 8388608 words

High word count provides ample memory capacity for data storage needs.

Memory Width: 16

16-bit memory width facilitates efficient data loading and processing.

Terminal Pitch: 0.75 mm

Fine terminal pitch supports high-density packaging for compact electronic devices.

No. of Words Code: 8M

The 8M word capacity is suitable for a wide range of applications, from embedded systems to advanced electronics.

Command User Interface: YES

The command user interface simplifies the programming process, reducing development time.

Maximum Supply Voltage (Vsup): 2 V

A maximum supply voltage of 2V ensures broad compatibility with various power sources.

Boot Block: TOP

With boot block being on top, it allows for quick access to boot code, enhancing system start-up times.

Memory Density: 134217728 bit

High memory density enables efficient use of space without sacrificing performance.

Memory IC Type: FLASH

As a flash memory device, it offers non-volatile storage solutions that retain data without power.

Maximum Standby Current: 0.000005 Amp

Extremely low standby current consumption is ideal for battery-operated devices, preserving energy.

Maximum Access Time: 95 ns

Fast access time improves overall system performance, crucial for high-speed applications.

Technical Specifications

Flash Memory M58LR128FT95ZB6F attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

95 ns

Additional Features:

SYNCHRONOUS BURST MODE OPERATION POSSIBLE

Boot Block:

TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B56

JESD-609 Code:

e1

Length:

9 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,127

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA56,7X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Page Size (words):

4

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

27 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Width:

7.7 mm

Trade Compliance

M58LR128FT95ZB6F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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