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M58LR128FB95ZB6E

STMicroelectronics

M58LR128FB95ZB6E by STMicroelectronics

M58LR128FB95ZB6E from STMicroelectronics is a 1.8V NOR Flash memory with 8M words capacity and a max access time of 95 ns. It features a very thin profile, surface mount design, and operates in industrial temperatures (-40 °C to 85 °C). Ideal for embedded applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,737 parts In-Stock

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4,737

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Vyrian

USA . 927 parts In-Stock

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Anansix

USA . 832 parts In-Stock

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832

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 574 parts In-Stock

1+ parts

$2.969

100+ parts

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$2.672

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574

$2.969

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$2.672

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MKK Technologies

India . 1,129 parts In-Stock

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$5.583

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$5.583

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DigiPath Technology Company

USA . 1,129 parts In-Stock

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$5.583

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1,129

$5.583

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Parana Technologies

USA . 1,859 parts In-Stock

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$3.550

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1,859

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$3.550

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Corphita

USA . 822 parts In-Stock

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822

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Overview

Unlock unparalleled performance and reliability with the M58LR128FB95ZB6E Flash Memory from STMicroelectronics. Renowned for excellence, STMicroelectronics delivers a robust solution ideal for industrial applications, promising superior data retention and swift access times. With its compact design and low power consumption, this high-density memory enhances efficiency in your projects, ensuring seamless operations in diverse environments. Elevate your technology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection against environmental factors, making it a reliable choice for various applications.

Surface Mount: YES

Surface mount technology allows for compact design and easy integration into modern electronic devices, saving space on circuit boards.

Package Shape: RECTANGULAR

A rectangular package shape is ideal for efficient layout on PCBs and optimal space utilization.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enhances the performance and responsiveness of the memory, allowing for faster data processing.

Nominal Supply Voltage / Vsup (V): 1.8

A low nominal supply voltage contributes to reduced power consumption, making this memory suitable for energy-efficient applications.

Power Supplies (V): 1.8

Compatible with modern low-voltage designs, ensuring energy efficiency and improved battery life in portable devices.

No. of Terminals: 56

A higher number of terminals allows for more connections and easier integration in complex systems.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Thin profile and fine pitch enable high-density mounting, making it suitable for space-constrained applications.

Maximum Operating Temperature: 85 °C

Capable of functioning in high temperatures, which makes this memory ideal for industrial and harsh environments.

Organization: 8MX16

This organization supports a large memory capacity, making it suitable for advanced applications requiring high storage.

Minimum Operating Temperature: -40 °C

Wide temperature range compatibility makes this memory suitable for extreme conditions and outdoor applications.

No. of Sectors/Size: 4,127

A high number of sectors allows for efficient memory organization and management, making data access more effective.

Terminal Finish: TIN SILVER COPPER

Quality terminal finish enhances reliability and performance in connecting with other components.

Terminal Position: BOTTOM

Bottom terminal position simplifies the mounting process on PCBs and enhances thermal performance.

Maximum Seated Height: 1 mm

Low height facilitates integration into compact devices, ideal for modern electronics with space constraints.

Width: 7.7 mm

Compact width contributes to the overall space-saving design essential in contemporary electronics.

Minimum Supply Voltage (Vsup): 1.7 V

Allows greater flexibility in power supply design and is suitable for battery-operated devices.

Page Size (words): 4

Small page size enhances data throughput for applications requiring frequent access.

Type: NOR TYPE

NOR type memory is ideal for applications requiring random access and quick data retrieval.

Common Flash Interface: YES

Compatibility with a common flash interface ensures ease of integration and use across various systems.

Length: 9 mm

Minimal length helps in keeping the entire circuit design compact and efficient.

Programming Voltage (V): 1.8

Low programming voltage helps in reducing energy consumption, suitable for battery-powered applications.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, ensuring reliability and stability under demanding conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making it a robust choice for digital applications.

Parallel or Serial: PARALLEL

Parallel data access enhances speed and efficiency, making it suitable for high-performance applications.

Terminal Form: BALL

Ball terminal design allows for better heat dissipation and improved mechanical stability when mounted.

Sector Size (Words): 16K, 64K

Flexible sector sizes provide adaptability for various application requirements and memory management strategies.

Maximum Supply Current: 47 mA

This current specification supports high performance while ensuring energy efficiency in applications.

No. of Words: 8388608 words

A high word count translates to significant storage capacity, supporting extensive applications.

Memory Width: 16

A memory width of 16 bits allows for efficient data processing and greater throughput.

Terminal Pitch: 0.75 mm

Narrow terminal pitch allows for high-density board layouts, making it suitable for compact designs.

No. of Words Code: 8M

Indicating high memory capacity, making it suitable for data-intensive applications.

Command User Interface: YES

User-friendly command interface simplifies programming and usage across different platforms.

Maximum Supply Voltage (Vsup): 2 V

Compatibility with low supply voltage enhances energy efficiency and reduces thermal output.

Boot Block: BOTTOM

Boot block at the bottom allows for efficient programming and data protection mechanisms in applications.

Memory Density: 134217728 bit

High memory density offers substantial storage for applications, catering to demanding data requirements.

Memory IC Type: FLASH

Flash memory technology is known for its fast read/write cycles, making it suitable for a wide range of applications.

Maximum Standby Current: 0.000005 Amp

Extremely low standby current contributes to energy savings, ideal for battery-powered devices and applications.

Maximum Access Time: 95 ns

Fast access time enables quick data retrieval, improving overall device performance in dynamic environments.

Technical Specifications

Flash Memory M58LR128FB95ZB6E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

95 ns

Additional Features:

SYNCHRONOUS BURST MODE OPERATION POSSIBLE

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B56

JESD-609 Code:

e1

Length:

9 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,127

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA56,7X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Page Size (words):

4

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

47 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

NOR TYPE

Width:

7.7 mm

Trade Compliance

M58LR128FB95ZB6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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