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M58LW064D110N6E

STMicroelectronics

M58LW064D110N6E by STMicroelectronics

STMicroelectronics M58LW064D110N6E is a 64Mb NOR Flash Memory with 4MX16 organization, operating at 3V. It features synchronous operation, industrial temperature grade, and parallel interface. Ideal for applications requiring fast access times and high memory density in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,795 parts In-Stock

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3,795

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Anansix

USA . 2,187 parts In-Stock

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2,187

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Vyrian

USA . 1,518 parts In-Stock

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1,518

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,327 parts In-Stock

1+ parts

$4.850

100+ parts

-

1k+ parts

$4.365

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1,327

$4.850

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$4.365

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MKK Technologies

India . 1,147 parts In-Stock

1+ parts

$9.121

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1,147

$9.121

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DigiPath Technology Company

USA . 1,147 parts In-Stock

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$9.121

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1,147

$9.121

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AZTECH Wire

Italy . 735 parts In-Stock

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$13.665

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735

$13.665

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Argo Parts USA

USA . 3,586 parts In-Stock

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3,586

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Corphita

USA . 3,144 parts In-Stock

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3,144

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Continental Prestige Electronics

USA . 1,842 parts In-Stock

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1,842

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Parana Technologies

USA . 1,540 parts In-Stock

1+ parts

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$5.799

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1,540

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$5.799

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Unlock the power of reliable and high-quality flash memory with the M58LW064D110N6E by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-notch products suitable for various applications. This flash memory offers exceptional value with its fast access times, low standby current, and wide operating temperature range. Ideal for industrial use, the M58LW064D110N6E provides customers with a durable and efficient solution for their memory needs. Choose STMicroelectronics for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and light weight, making it a good choice for portable devices.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort in production processes.

Package Shape: RECTANGULAR

The rectangular package shape offers compatibility with standard PCB layouts, making integration into existing designs seamless.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise and efficient data transfer, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 3

With a nominal supply voltage of 3V, this flash memory offers compatibility with a wide range of systems, making it a versatile choice.

Power Supplies (V): 3/3.3

The availability of multiple power supply options (3V and 3.3V) increases flexibility in system design and compatibility.

No. of Terminals: 56

Having 56 terminals provides ample connectivity options, allowing for versatile integration into different types of systems.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline, thin profile, and shrink pitch package style saves space on the PCB and enables compact and efficient designs.

Alternate Memory Width: 8

The option for alternate memory width of 8 ensures compatibility with a variety of system architectures and requirements.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C allows for reliable performance even in demanding environmental conditions.

Organization: 4MX16

The 4MX16 organization offers a balanced combination of capacity and speed, making it suitable for a wide range of applications.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this flash memory can withstand extreme cold conditions, increasing its versatility.

No. of Sectors/Size: 64

The presence of 64 sectors allows for efficient data organization and management, enhancing system performance.

Terminal Position: DUAL

Dual terminal position offers increased reliability in connectivity and ensures secure connections in harsh environments.

Maximum Seated Height: 1.2 mm

The maximum seated height of 1.2mm ensures a low-profile design, making it suitable for slim and compact devices.

Width: 14 mm

The width of 14mm allows for easy integration into various PCB layouts without occupying excess space.

Minimum Supply Voltage (Vsup): 2.7 V

With a minimum supply voltage of 2.7V, this flash memory can operate efficiently even with low power sources.

Page Size (words): 4/8

The option for page sizes of 4 or 8 words provides flexibility in data transfer and storage, catering to diverse application needs.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures robust soldering during assembly, enhancing reliability.

Type: NOR TYPE

Being a NOR type flash memory, it offers fast read speeds and random access capabilities, making it ideal for applications requiring quick data retrieval.

Common Flash Interface: YES

The presence of a common flash interface simplifies system integration and programming, reducing development time and effort.

Length: 18.4 mm

The length of 18.4mm allows for a compact footprint on the PCB, enabling space-efficient designs.

Programming Voltage (V): 3

With a programming voltage of 3V, this flash memory provides efficient programming and reliable operation in various systems.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliability and performance in harsh operating conditions, making it suitable for industrial applications.

Technology: CMOS

The use of CMOS technology offers low power consumption and high speed operation, enhancing energy efficiency and overall performance.

Parallel or Serial: PARALLEL

Operating in parallel mode offers fast data transfer rates and concurrent access, making it a good choice for applications requiring high-speed performance.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and secure connections, ensuring robustness in various environmental conditions.

Sector Size (Words): 128K

The sector size of 128K words allows for efficient data storage and retrieval, enhancing system performance.

Maximum Supply Current: 30 mA

With a maximum supply current of 30mA, this flash memory consumes low power, making it suitable for battery-powered devices.

No. of Words: 4194304 words

The high number of words provides ample storage capacity for data-intensive applications, making it a versatile choice.

Memory Width: 16

The memory width of 16 enables efficient data processing and storage, catering to high-performance requirements.

Terminal Pitch: 0.5 mm

The small terminal pitch of 0.5mm allows for high-density mounting, saving PCB space and enabling compact designs.

No. of Words Code: 4M

The 4M words code ensures compatibility with systems that require specific memory sizes, offering flexibility in application design.

Command User Interface: YES

The presence of a command user interface simplifies memory access and control, enabling seamless integration into different systems.

Ready or Busy: YES

The ready or busy signal indicates the memory status, ensuring effective data synchronization and system operation.

Maximum Supply Voltage (Vsup): 3.6 V

With a maximum supply voltage of 3.6V, this flash memory offers voltage protection and reliability in varying power conditions.

Memory Density: 67108864 bit

The high memory density of 67108864 bits provides abundant storage capacity for data-intensive applications, making it a versatile choice.

Memory IC Type: FLASH

Being a flash memory IC type, it offers non-volatile storage, high-speed data access, and reliable performance, making it ideal for a wide range of applications.

Maximum Standby Current: 0.00004 Amp

The low maximum standby current of 0.00004 Amp ensures minimal power consumption during idle states, enhancing energy efficiency.

Maximum Access Time: 110 ns

With a maximum access time of 110 nanoseconds, this flash memory offers quick data retrieval and processing, enhancing overall system performance.

Technical Specifications

Flash Memory M58LW064D110N6E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

110 ns

Alternate Memory Width:

8

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G56

Length:

18.4 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

64

No. of Terminals:

56

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Page Size (words):

4/8

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

128K

Maximum Standby Current:

.00004 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

M58LW064D110N6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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