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74V2G00CTR

STMicroelectronics

74V2G00CTR by STMicroelectronics

74V2G00CTR by STMicroelectronics is a dual-input CMOS logic gate with a propagation delay of just 13 ns. It operates within a supply voltage range of 2-5.5 V and features an 8-terminal, thin-profile package. Ideal for compact electronic applications, it ensures efficient signal processing in space-constrained designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,777 parts In-Stock

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2,777

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Vyrian

USA . 1,910 parts In-Stock

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1,910

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Anansix

USA . 1,681 parts In-Stock

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1,681

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NAC Semi

USA . 5 parts In-Stock

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5

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Distributors (Availability)

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Native Components

USA . 281 parts In-Stock

1+ parts

$0.376

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$0.361

281

$0.376

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$0.361

Northwest PG Solutions

USA . 562 parts In-Stock

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$0.414

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$0.365

562

$0.414

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$0.365

IDEA Electronic Components Group

UK . 561 parts In-Stock

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$13.431

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$12.088

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561

$13.431

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$12.088

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MKK Technologies

India . 1,157 parts In-Stock

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$25.256

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1,157

$25.256

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DigiPath Technology Company

USA . 1,157 parts In-Stock

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$25.256

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$25.256

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Parana Technologies

USA . 1,690 parts In-Stock

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$16.059

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$16.059

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Corphita

USA . 813 parts In-Stock

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813

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Overview

Elevate your designs with the 74V2G00CTR from STMicroelectronics—a trusted leader in high-quality logic gates. This dual-input, compact solution excels in efficiency and speed, boasting a swift 13 ns propagation delay. Ideal for a variety of applications, from consumer electronics to industrial automation, it ensures reliability under extreme conditions. Choose STMicroelectronics for cutting-edge technology that empowers innovation and drives your projects forward with unmatched performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of PLASTIC/EPOXY ensures durability and good insulation properties, making it suitable for a variety of applications.

Propagation Delay At Nominal Supply: 13 ns

A low propagation delay of 13 ns indicates fast switching speeds, which is crucial for high-performance digital circuits.

Surface Mount: YES

Being surface mount allows for compact design and easy integration into modern circuit boards.

No. of Functions: 2

Having multiple functions in a single package increases versatility and reduces the need for multiple components.

No. of Inputs: 2

With 2 inputs, this gate can handle basic logic operations efficiently, making it ideal for simple digital logic designs.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient space utilization on PCBs, allowing for compact assembly.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V is commonly used in low-power digital circuits, promoting energy efficiency.

Power Supplies (V): 2/6

The product supports a voltage range of 2V to 6V, providing flexibility for various circuit requirements.

No. of Terminals: 8

With 8 terminals, it allows for more complex circuit configurations, suitable for diverse applications.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

This style allows for minimized PCB space usage while maintaining a robust footprint, essential for modern electronics.

Maximum I (ol): 4 Amp

The capability to handle up to 4 Amps ensures it can support high-load applications without compromising performance.

Propagation Delay (tpd): 13 ns

The consistent propagation delay reinforces the device's reliability in high-speed designs.

Maximum Operating Temperature: 85 °C

An operating temperature threshold of 85 °C allows for use in environments with moderate thermal conditions, enhancing reliability.

Minimum Operating Temperature: -55 °C

The capability to operate down to -55 °C makes this product suitable for harsh environmental applications.

Terminal Position: DUAL

Dual terminal position facilitates better airflow and heat dissipation, enhancing product performance.

Maximum Seated Height: 1.1 mm

The low seated height allows for more compact designs, beneficial for devices with space constraints.

Width: 1.25 mm

The narrow width is advantageous for high-density PCBs, offering more design flexibility.

Minimum Supply Voltage (Vsup): 2 V

A minimum supply voltage of 2V allows for use in low-voltage applications, supporting power-sensitive designs.

Length: 2 mm

The compact length is ideal for space-constrained applications, making integration into smaller devices easier.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, which are key advantages for portable devices.

Terminal Form: GULL WING

The gull wing terminal form provides excellent solder joint strength, ensuring a reliable connection on the PCB.

Packing Method: TR

Tape and reel packing facilitates automated assembly processes, improving manufacturing efficiency.

Terminal Pitch: 0.5 mm

A 0.5 mm terminal pitch allows for high-density layouts, making it ideal for modern compact circuit designs.

Maximum Supply Voltage (Vsup): 5.5 V

Supporting a maximum of 5.5V ensures compatibility with a wide range of voltage levels in electronic devices.

Technical Specifications

Logic Gates 74V2G00CTR attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

74V

JESD-30 Code:

R-PDSO-G8

Length:

2 mm

Logic IC Type:

Maximum I (ol):

4 Amp

No. of Functions:

2

No. of Inputs:

2

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.09,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Power Supplies (V):

2/6

Propagation Delay At Nominal Supply:

13 ns

Propagation Delay (tpd):

13 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1.25 mm

Trade Compliance

74V2G00CTR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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