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74V2G02STR

STMicroelectronics

74V2G02STR by STMicroelectronics

74V2G02STR by STMicroelectronics is a dual-input CMOS logic gate with a propagation delay of just 11.5 ns. It operates within a supply voltage range of 2-5.5 V and supports military-grade temperatures from -55 °C to 125°C. Ideal for compact, high-speed applications in low-profile designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,544 parts In-Stock

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5,544

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Digiode

USA . 2,479 parts In-Stock

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Anansix

USA . 951 parts In-Stock

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951

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Microchip USA

USA . 252 parts In-Stock

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$0.394

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252

$0.394

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AZTECH Wire

Italy . 465 parts In-Stock

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$12.770

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465

$12.770

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IDEA Electronic Components Group

UK . 1,358 parts In-Stock

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$26.939

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$24.245

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$26.939

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$24.245

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MKK Technologies

India . 831 parts In-Stock

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$50.656

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831

$50.656

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DigiPath Technology Company

USA . 831 parts In-Stock

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$50.656

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831

$50.656

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QUARKTWIN TECHNOLOGY LTD

USA . 19,474 parts In-Stock

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Parana Technologies

USA . 2,203 parts In-Stock

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$32.209

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Corphita

USA . 2,007 parts In-Stock

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Northwest PG Solutions

USA . 1,337 parts In-Stock

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Native Components

USA . 499 parts In-Stock

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Overview

Unlock superior performance with the 74V2G02STR from STMicroelectronics, a leader in cutting-edge logic gate technology. Designed for efficiency and reliability, this compact dual-input device delivers rapid signal processing in diverse applications, from automotive to industrial controls. With a robust temperature range and low power consumption, it ensures optimal operation in demanding environments. Elevate your designs with proven quality and innovation that only STMicroelectronics can offer!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability, resistance to moisture, and good thermal stability, making it suitable for a wide range of applications.

Propagation Delay At Nominal Supply: 11.5 ns

A propagation delay of 11.5 ns is fast enough for high-speed applications, ensuring quick signal processing and improved performance in digital circuits.

Surface Mount: YES

The surface mount capability allows for compact designs and easier integration into automated assembly processes, enhancing manufacturing efficiency.

No. of Functions: 2

With two functions integrated, this logic gate offers versatility, allowing for multiple operations in a single package and saving board space.

No. of Inputs: 2

Having 2 inputs means the gate can perform basic boolean operations, which is essential for various digital logic applications.

Package Shape: RECTANGULAR

The rectangular shape enhances compatibility with a wide range of PCB layouts and improves space utilization on circuit boards.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V is ideal for modern low-power digital applications, helping to reduce energy consumption.

Power Supplies (V): 2/5.5

The flexibility in power supply voltage ranges from 2V to 5.5V allows for integration in various systems with different voltage requirements.

No. of Terminals: 8

An 8-terminal configuration provides sufficient connections for inputs and outputs while maintaining a compact footprint.

Package Style (Meter): SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

The small outline, low-profile design optimizes space, making it suitable for compact and portable electronic devices.

Maximum I (ol): 4 Amp

The ability to handle a maximum output current of 4 Amps allows this logic gate to drive substantial loads, making it ideal for power applications.

Propagation Delay (tpd): 11.5 ns

The consistent propagation delay ensures reliable performance in time-sensitive applications, enabling efficient signaling and data processing.

Maximum Operating Temperature: 125 °C

Operating at high temperatures (up to 125 °C) indicates robustness, making the product suitable for harsh environments, such as automotive or industrial applications.

Minimum Operating Temperature: -55 °C

A wide operating temperature range (-55 °C to 125 °C) ensures reliable performance across extreme environmental conditions.

Terminal Position: DUAL

The dual terminal position aids in easy and reliable soldering and connection to PCB, enhancing overall design flexibility.

Maximum Seated Height: 1.45 mm

The low seated height contributes to compact designs and fits into tight spaces in electronic assemblies.

Width: 1.625 mm

Its narrow width allows more components to fit on a PCB, achieving higher density in circuit designs.

Minimum Supply Voltage (Vsup): 2 V

The minimum supply voltage of 2V provides flexibility for low-voltage applications, which is crucial for battery-powered devices.

Length: 2.9 mm

A compact length of 2.9 mm ensures that the device can fit into smaller form factor designs, optimizing space on circuit boards.

Temperature Grade: MILITARY

The military temperature grade indicates high reliability and performance standards, making it ideal for critical and defense applications.

Technology: CMOS

CMOS technology combines low power consumption with high noise immunity, making it suitable for battery-operated devices and enhancing performance.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and provide better mechanical stability on PCBs, enhancing reliability in assembly.

Packing Method: TR

The Tape and Reel (TR) packing method allows for efficient handling and automated assembly, improving production throughput.

Terminal Pitch: 0.65 mm

A terminal pitch of 0.65 mm supports high-density mounting, making it suitable for modern compact electronics.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V provides versatility for various applications, accommodating both low and higher power circuits.

Technical Specifications

Logic Gates 74V2G02STR attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G8

Length:

2.9 mm

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.1

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Power Supplies (V):

2/5.5

Propagation Delay At Nominal Supply:

11.5 ns

Propagation Delay (tpd):

11.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

1.625 mm

Trade Compliance

74V2G02STR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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