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74V2G05CTR

STMicroelectronics

74V2G05CTR by STMicroelectronics

74V2G05CTR by STMicroelectronics is a CMOS logic gate with a propagation delay of just 11 ns, operating b/w 2-5.5 V. It features an open-drain output and supports up to 4 A load current. Ideal for military applications, it operates in extreme temperatures from -55 °C to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 1,021 parts In-Stock

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Anansix

USA . 517 parts In-Stock

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Vyrian

USA . 83 parts In-Stock

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Native Components

USA . 1 parts In-Stock

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$0.312

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$0.300

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Northwest PG Solutions

USA . 531 parts In-Stock

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$0.343

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$0.303

531

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IDEA Electronic Components Group

UK . 113 parts In-Stock

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$28.457

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$25.611

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MKK Technologies

India . 1,772 parts In-Stock

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$53.511

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DigiPath Technology Company

USA . 1,772 parts In-Stock

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$53.511

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Corphita

USA . 3,084 parts In-Stock

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Parana Technologies

USA . 1,207 parts In-Stock

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$34.024

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Overview

Unlock unparalleled performance and reliability with the 74V2G05CTR from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for versatility in logic applications, this compact, high-speed gate ensures seamless integration into your projects while offering exceptional power efficiency. With a wide operating temperature range and robust construction, you can trust its durability in demanding environments. Elevate your designs and experience unmatched quality and support—choose ST for your next breakthrough!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials enhances the durability and protects the internal circuitry, making it suitable for various applications.

Propagation Delay At Nominal Supply: 11 ns

With a low propagation delay, this product ensures fast switching speeds, ideal for high-speed digital applications.

Surface Mount: YES

Surface mount technology allows for compact PCB designs, enhancing space efficiency in modern electronics.

No. of Functions: 3

Having multiple functions in one package increases design flexibility, allowing for a more versatile application in circuits.

Package Shape: RECTANGULAR

The rectangular shape is optimized for efficient space usage on circuit boards, facilitating an easier integration process.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures compatibility with most low-power digital systems.

Load Capacitance (CL): 50 pF

A load capacitance of 50 pF enables effective handling of digital signals without excessive delay, contributing to overall performance.

Power Supplies (V): 2/5.5

Supports a wide range of supply voltages, making it adaptable to various power supply conditions and reducing design constraints.

No. of Terminals: 8

With 8 terminals, it offers sufficient connectivity options for complex circuits while remaining compact.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline and thin profile design allows for higher density packaging on PCBs, making it ideal for space-constrained applications.

Maximum I (ol): 4 Amp

A high maximum output current of 4A allows this device to drive larger loads, making it suitable for power applications.

Propagation Delay (tpd): 12.5 ns

The propagation delay of 12.5 ns, although slightly higher than the nominal, still provides good timing performance for digital circuits.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, it is suitable for industrial and military applications that require reliability in extreme conditions.

Output Characteristics: OPEN-DRAIN

Open-drain output enables effective interfacing with various logic levels and supports wired logic configurations.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures functionality in harsh environments, broadening application possibilities.

Terminal Position: DUAL

Dual terminal positioning aids in easy routing and connection on PCBs, enhancing assembly efficiency.

Maximum Seated Height: 1.1 mm

A low seated height allows for further minimization of the overall device profile, suited for ultra-thin electronic devices.

Width: 1.25 mm

A narrow width of 1.25 mm helps save board space while allowing for increased component density.

Minimum Supply Voltage (Vsup): 2 V

The ability to operate at a minimum supply voltage of 2V makes it compatible with a variety of low-voltage digital systems.

Length: 2 mm

Compact length means easy integration into small designs, contributing to sleek and modern electronic products.

Temperature Grade: MILITARY

The military-grade temperature specification ensures durability and reliability under extreme conditions, suitable for defense applications.

Technology: CMOS

CMOS technology ensures low power consumption, which is critical for battery-operated devices and portable electronics.

Terminal Form: GULL WING

Gull wing terminals provide stable and secure connections to PCBs, enhancing reliability during operation.

Packing Method: TR

Tape and reel packaging simplifies handling and automated assembly processes, improving manufacturing efficiency.

Terminal Pitch: 0.5 mm

A 0.5 mm terminal pitch allows for tight spacing in designs while maintaining integrity and performance.

Maximum Supply Voltage (Vsup): 5.5 V

The capability to operate at a maximum supply voltage of 5.5V allows for greater flexibility in designing power supplies.

Technical Specifications

Logic Gates 74V2G05CTR attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

74V

JESD-30 Code:

R-PDSO-G8

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.09,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Power Supplies (V):

2/5.5

Propagation Delay At Nominal Supply:

11 ns

Propagation Delay (tpd):

12.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1.25 mm

Trade Compliance

74V2G05CTR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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