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74V2G132CTR

STMicroelectronics

74V2G132CTR by STMicroelectronics

74V2G132CTR from STMicroelectronics is a dual Schmitt trigger CMOS logic gate with a propagation delay of just 13 ns. It operates b/w 2-5.5 V, supports up to 4 A output current, and is ideal for high-speed applications in military environments. Its compact SOIC package ensures efficient space utilization.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,328 parts In-Stock

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Anansix

USA . 1,930 parts In-Stock

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Vyrian

USA . 185 parts In-Stock

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185

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IDEA Electronic Components Group

UK . 422 parts In-Stock

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$12.691

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$11.422

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422

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MKK Technologies

India . 1,920 parts In-Stock

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$23.865

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DigiPath Technology Company

USA . 1,920 parts In-Stock

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$23.865

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$23.865

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Parana Technologies

USA . 1,800 parts In-Stock

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$15.174

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$15.174

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Northwest PG Solutions

USA . 1,349 parts In-Stock

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1,349

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Corphita

USA . 547 parts In-Stock

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Native Components

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Overview

Unlock the potential of your projects with the 74V2G132CTR from STMicroelectronics—a leader in precision and reliability. This dual-input Schmitt trigger logic gate delivers unmatched speed and low power consumption, ensuring your designs are both efficient and effective. Ideal for automotive, industrial, and consumer applications, its compact package and robust performance make it a trusted choice for engineers seeking quality and innovation. Experience seamless integration and superior functionality that elevate your work to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material offers durability and resilience, making it suitable for various applications.

Propagation Delay At Nominal Supply: 13 ns

A low propagation delay of 13 ns ensures fast signal processing, enhancing the overall performance of the logic gate.

Surface Mount: YES

Surface mount compatibility allows for efficient use of PCB space and improves assembly techniques.

No. of Functions: 2

Supporting two functions increases the versatility of the product, making it adaptable for different circuit applications.

No. of Inputs: 2

With two inputs, this logic gate can facilitate various logical operations, improving design flexibility.

Package Shape: RECTANGULAR

The rectangular package shape promotes efficient layout on PCBs, making it easier to integrate into existing designs.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3 V is common in modern electronic applications, ensuring compatibility with a wide range of systems.

Load Capacitance (CL): 50 pF

A load capacitance of 50 pF supports efficient signal transmission with minimal delay, enhancing overall circuit performance.

Power Supplies (V): 2/5.5

The flexibility of operating voltage ranges from 2 V to 5.5 V makes this product suitable for both low-power and higher-voltage applications.

No. of Terminals: 8

Having 8 terminals provides ample connectivity options, facilitating integration into various electronic designs.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The small outline, thin profile, and shrink pitch design help optimize space on PCBs while maintaining a high density of components.

Maximum I (ol): 4 Amp

A maximum output current of 4 Amp allows this logic gate to drive higher loads, making it applicable for power-effective designs.

Propagation Delay (tpd): 13 ns

Repeated specification of a 13 ns propagation delay reinforces the rapid response feature, crucial for high-speed applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures reliability and functionality in demanding environments.

Minimum Operating Temperature: -55 °C

The ability to function at a low temperature of -55 °C expands the application范围 to extreme conditions.

Terminal Position: DUAL

The dual terminal position improves design flexibility when routing connections in complex circuits.

Maximum Seated Height: 1.1 mm

The low seated height of 1.1 mm enables compact designs, suitable for applications where space is limited.

Width: 1.25 mm

A width of 1.25 mm contributes to a compact form factor, making it ideal for miniaturized electronic designs.

Minimum Supply Voltage (Vsup): 2 V

The minimum supply voltage of 2 V allows for operation in low-power scenarios, enhancing energy efficiency.

Length: 2 mm

A small length of 2 mm supports space efficiency in PCB layout, ideal for high-density applications.

Temperature Grade: MILITARY

Military grade temperature specifications ensure robustness and reliability in harsh operational environments.

Schmitt Trigger: YES

Incorporating a Schmitt trigger enhances noise immunity and stability of the output signal, crucial for digital logic design.

Technology: CMOS

The use of CMOS technology contributes to low power consumption and high-speed operation, making it suitable for modern applications.

Terminal Form: GULL WING

Gull wing terminal form enhances soldering ease and reliability, crucial for robust connections in electronic circuits.

Packing Method: TR

Using tape and reel packaging facilitates automated assembly processes, improving manufacturing efficiency.

Terminal Pitch: 0.5 mm

A 0.5 mm terminal pitch allows for compact and dense layouts, maximizing space and connectivity on PCBs.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5 V accommodates a wide range of applications, allowing for flexibility in design choices.

Technical Specifications

Logic Gates 74V2G132CTR attributes and parameters. Explore more Logic Gates devices from STMicroelectronics

Specs

Family:

74V

JESD-30 Code:

R-PDSO-G8

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

No. of Functions:

2

No. of Inputs:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.09,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Power Supplies (V):

2/5.5

Propagation Delay At Nominal Supply:

13 ns

Propagation Delay (tpd):

13 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width:

1.25 mm

Trade Compliance

74V2G132CTR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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