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74LVC1G14W5-7

Diodes Incorporated

74LVC1G14W5-7 by Diodes Incorporated

74LVC1G14W5-7 by Diodes Inc. is a CMOS logic gate with Schmitt Trigger feature. It operates at a nominal voltage of 3.3V and has a propagation delay of 7ns. With a small outline package style, it is ideal for automotive applications requiring fast signal processing in compact spaces.

Median Price

$0.068

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Avnet

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Arrow

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Semtec, LLC

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Bristol Electronics

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USA . 500 parts In-Stock

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Modulus Dynamics

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Aztec Data Supply Inc.

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Lucentia Tech

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Overview

Enhance your electronic projects with the 74LVC1G14W5-7 logic gate from Diodes Incorporated. Designed with top-notch quality and precision, this small outline, low profile package offers a fast propagation delay of 7 ns, making it ideal for high-speed applications. Whether you're working on automotive systems or consumer electronics, this logic gate ensures reliable performance and efficiency. Upgrade your designs today with the unmatched value and benefits that the 74LVC1G14W5-7 brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the logic gate, ensuring long-term reliability.

Propagation Delay At Nominal Supply: 7 ns

Low propagation delay ensures fast processing speeds, making the logic gate suitable for high-speed applications.

Surface Mount: YES

Ease of installation and compatibility with modern PCB assembly processes.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a common voltage level, making it compatible with a wide range of systems.

Load Capacitance (CL): 50 pF

Optimized for handling a standard load capacitance, ensuring stable and reliable performance.

Power Supplies (V): 3.3

Efficient power consumption at a standard voltage level.

No. of Terminals: 5

Compact design with a minimal number of terminals for simplified integration into circuit layouts.

Maximum I (ol): 24 Amp

High output current capability for driving external loads.

Propagation Delay (tpd): 14 ns

Balanced propagation delay for reliable signal processing.

Maximum Operating Temperature: 125 °C

Suitable for operation in a wide range of ambient temperatures.

Output Characteristics: TOTEM POLE

Provides both high and low output states for versatile signal handling.

Terminal Finish: MATTE TIN

Corrosion-resistant finish for long-term reliability and robustness.

Schmitt Trigger: YES

Provides hysteresis for noise immunity, ensuring stable signal processing.

Technology: CMOS

Low power consumption and high noise immunity characteristics of CMOS technology.

Max Supply Voltage (Vsup): 5.5 V

Wide supply voltage range for compatibility with different system requirements.

Technical Specifications

Logic Gates 74LVC1G14W5-7 attributes and parameters. Explore more Logic Gates devices from Diodes Incorporated

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

TOTEM POLE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

7 ns

Propagation Delay (tpd):

14 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.6 mm

Trade Compliance

74LVC1G14W5-7 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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