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74LVC1G14GW,165

NXP Semiconductors

74LVC1G14GW,165 by NXP Semiconductors

NXP Semiconductors' 74LVC1G14GW,165 is a CMOS Logic Gate with Schmitt Trigger. It operates at 1.8V nominal voltage and has a propagation delay of 7ns. Suitable for automotive applications, it features a small outline package with dual terminals and can withstand temperatures from -40 to 125°C.

Median Price

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Lifecycle Status

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6

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1k+

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Chip Stock

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Vyrian

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AZTECH Wire

Italy . 13,823 parts In-Stock

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Advanced Electronics

New Zealand . 700 parts In-Stock

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Aztec Data Supply Inc.

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Corohmni

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Semicontronic

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One Stop Electronics

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Component Stockers USA

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Overview

Discover the cutting-edge 74LVC1G14GW,165 by NXP Semiconductors, a top-tier Logic Gates component that guarantees exceptional quality and performance. Perfect for a wide range of applications, this product offers unparalleled reliability and efficiency. With NXP Semiconductors' reputation for excellence in semiconductor manufacturing, you can trust that you're getting the best in the industry. Upgrade your projects with the 74LVC1G14GW,165 today and experience the value and advantages it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and resistant material for protection against physical damage

Propagation Delay At Nominal Supply: 7 ns

Low propagation delay ensures fast response time in circuit operation

Surface Mount: YES

Easy installation on circuit boards, saving space and facilitating automated assembly

Nominal Supply Voltage / Vsup (V): 1.8

Suitable for low power applications with efficient performance

Load Capacitance (CL): 50 pF

Optimized capacitance for smooth signal transmission and stability

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, ideal for various operating environments

Schmitt Trigger: YES

Provides hysteresis for noise immunity and reliable signal processing

Technology: CMOS

Low power consumption, high noise immunity, and compatibility with various logic levels

Technical Specifications

Logic Gates 74LVC1G14GW,165 attributes and parameters. Explore more Logic Gates devices from NXP Semiconductors

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2.05 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

7 ns

Propagation Delay (tpd):

14 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

1.25 mm

Trade Compliance

74LVC1G14GW,165 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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